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Bulk Current Model for GaN-on-Si High Electron Mobility Transistors
Frontiers in Electronics
◽
10.1142/9789813220829_0002
◽
2017
◽
Author(s):
Mirwazul Islam
◽
Grigory Simin
Keyword(s):
Electron Mobility
◽
Current Model
◽
High Electron Mobility Transistors
◽
High Electron
◽
High Electron Mobility
◽
Electron Mobility Transistors
◽
Gan On Si
Download Full-text
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References
GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs)
Materials Science in Semiconductor Processing
◽
10.1016/j.mssp.2021.106109
◽
2021
◽
Vol 135
◽
pp. 106109
Author(s):
Debaleen Biswas
◽
Takuya Tsuboi
◽
Takashi Egawa
Keyword(s):
Quantum Well
◽
Electron Mobility
◽
High Electron Mobility Transistors
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High Electron Mobility
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Double Quantum Well
◽
Gate Structure
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Gan On Si
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Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors
Applied Physics Express
◽
10.1143/apex.5.034103
◽
2012
◽
Vol 5
(3)
◽
pp. 034103
Author(s):
Farid Medjdoub
◽
Damien Ducatteau
◽
Malek Zegaoui
◽
Bertrand Grimbert
◽
Nathalie Rolland
◽
...
Keyword(s):
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
◽
High Electron Mobility
◽
Electron Confinement
◽
Electron Mobility Transistors
◽
Gan On Si
◽
Trapping Effects
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Investigation of Degradation Effects Due to Gate Stress in GaN-on-Si High Electron Mobility Transistors Through Analysis of Low Frequency Noise
10.15368/theses.2014.17
◽
2014
◽
Author(s):
Michael Curtis Meyer Masuda
Keyword(s):
Electron Mobility
◽
Low Frequency
◽
High Electron Mobility Transistors
◽
Frequency Noise
◽
High Electron
◽
Low Frequency Noise
◽
High Electron Mobility
◽
Electron Mobility Transistors
◽
Gan On Si
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Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency f T of 310 GHz
Applied Physics Express
◽
10.7567/1882-0786/ab56e2
◽
2019
◽
Vol 12
(12)
◽
pp. 126506
◽
Cited By ~ 1
Author(s):
Hanlin Xie
◽
Zhihong Liu
◽
Yu Gao
◽
Kumud Ranjan
◽
Kenneth E. Lee
◽
...
Keyword(s):
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
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High Electron Mobility
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Electron Mobility Transistors
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Threading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing
AIP Advances
◽
10.1063/1.4962544
◽
2016
◽
Vol 6
(9)
◽
pp. 095102
◽
Cited By ~ 7
Author(s):
W. A. Sasangka
◽
G. J. Syaranamual
◽
R. I. Made
◽
C. V. Thompson
◽
C. L. Gan
Keyword(s):
High Temperature
◽
Electron Mobility
◽
Reverse Bias
◽
High Electron Mobility Transistors
◽
Threading Dislocation
◽
High Electron
◽
High Electron Mobility
◽
Electron Mobility Transistors
◽
Dislocation Movement
◽
Gan On Si
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Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors
IEEE Electron Device Letters
◽
10.1109/led.2020.3030341
◽
2020
◽
Vol 41
(12)
◽
pp. 1754-1757
Author(s):
Filip Wach
◽
Michael J. Uren
◽
Benoit Bakeroot
◽
Ming Zhao
◽
Stefaan Decoutere
◽
...
Keyword(s):
Charge Transport
◽
Electron Mobility
◽
High Electron Mobility Transistors
◽
Buffer Layers
◽
High Electron
◽
High Electron Mobility
◽
Electron Mobility Transistors
◽
Low Field
◽
Gan On Si
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An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors
Electronics
◽
10.3390/electronics5020028
◽
2016
◽
Vol 5
(4)
◽
pp. 28
◽
Cited By ~ 10
Author(s):
An-Jye Tzou
◽
Dan-Hua Hsieh
◽
Szu-Hung Chen
◽
Yu-Kuang Liao
◽
Zhen-Yu Li
◽
...
Keyword(s):
Electron Mobility
◽
High Electron Mobility Transistors
◽
Carbon Doping
◽
High Electron
◽
Induced Current
◽
High Electron Mobility
◽
Electron Mobility Transistors
◽
Current Collapse
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Gan On Si
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Novel packaging design for high-power GaN-on-Si high electron mobility transistors (HEMTs)
International Journal of Thermal Sciences
◽
10.1016/j.ijthermalsci.2012.10.003
◽
2013
◽
Vol 66
◽
pp. 63-70
◽
Cited By ~ 12
Author(s):
Stone Cheng
◽
Po-Chien Chou
Keyword(s):
High Power
◽
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
◽
High Electron Mobility
◽
Packaging Design
◽
Electron Mobility Transistors
◽
Gan On Si
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Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors
Nanotechnology
◽
10.1088/0957-4484/23/39/395204
◽
2012
◽
Vol 23
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◽
pp. 395204
◽
Cited By ~ 11
Author(s):
A Fontserè
◽
A Pérez-Tomás
◽
M Placidi
◽
J Llobet
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N Baron
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Keyword(s):
Electron Mobility
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High Electron Mobility Transistors
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High Electron
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High Electron Mobility
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Electron Mobility Transistors
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Gan On Si
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Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing
2015 IEEE International Reliability Physics Symposium
◽
10.1109/irps.2015.7112768
◽
2015
◽
Cited By ~ 5
Author(s):
W. A. Sasangka
◽
G. J. Syaranamual
◽
C. L. Gan
◽
C. V. Thompson
Keyword(s):
Electron Mobility
◽
Reverse Bias
◽
High Electron Mobility Transistors
◽
High Electron
◽
High Electron Mobility
◽
Electron Mobility Transistors
◽
Gan On Si
◽
Physical Degradation
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