Circuits and Simulation of Quaternary SRAM Using Quantum Dot Channel Field Effect Transistors (QDC-FETs)

2018 ◽  
pp. 33-41
Author(s):  
Bander Saman ◽  
Jun Kondo ◽  
J. Chandy ◽  
F. C. Jain
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors

scholarly journals Quantum dot field effect transistors

2013 ◽  
Vol 16 (9) ◽  
pp. 312-325 ◽  
Author(s):  
Frederik Hetsch ◽  
Ni Zhao ◽  
Stephen V. Kershaw ◽  
Andrey L. Rogach
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors

Simulation of Stacked Quantum Dot Channels SWS-FET Using Multi-FET ABM Modeling

2019 ◽  
Vol 28 (03n04) ◽  
pp. 1940025
Author(s):  
H. Salama ◽  
B. Saman ◽  
R. H. Gudlavalleti ◽  
P-Y. Chan ◽  
R. Mays ◽  
...  
Keyword(s):  
Experimental Data ◽  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Simulation Models ◽  
Logic Gates ◽  
Behavior Model ◽  
Analog Behavior

This paper presents simulation of spatial wavefunction switched (SWS) field-effect transistors (FETs) comprising of two vertically stacked quantum dot channels. An analog behavior model (ABM) was used to compare the experimental I-V characteristics of a fabricated QD-SWS-FET. Each channel consists of two quantum dot layers and are connected to the dedicated drains D2 and D1, respectively. The fabricated SWS-FET has one source and one gate. The ABM simulation models SWS-FET comprising of two independent conventional BSIM FETs with their (W/L) ratios, capacitances and other device parameters. The agreement in simulation and experimental data will advance modeling of SWS based adders, logic gates and SRAMs.

scholarly journals Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors

ACS Nano ◽  
2020 ◽  
Vol 14 (5) ◽  
pp. 5754-5762 ◽  
Author(s):  
Maria El Abbassi ◽  
Mickael L. Perrin ◽  
Gabriela Borin Barin ◽  
Sara Sangtarash ◽  
Jan Overbeck ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon

Cesium Lead Bromide Quantum Dot Light-Emitting Field-Effect Transistors

2020 ◽  
Vol 12 (19) ◽  
pp. 21944-21951
Author(s):  
Dae-Kyu Kim ◽  
Dongsun Choi ◽  
Mihyeon Park ◽  
Kwang Seob Jeong ◽  
Jong-Ho Choi
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Light Emitting ◽  
Lead Bromide

Gate-Dependent Carrier Diffusion Length in Lead Selenide Quantum Dot Field-Effect Transistors

Nano Letters ◽  
2013 ◽  
Vol 13 (8) ◽  
pp. 3463-3469 ◽  
Author(s):  
Tyler Otto ◽  
Chris Miller ◽  
Jason Tolentino ◽  
Yao Liu ◽  
Matt Law ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Diffusion Length ◽  
Field Effect Transistors ◽  
Lead Selenide ◽  
Carrier Diffusion

Memory Operation of Silicon Quantum-Dot Floating-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

2001 ◽  
Vol 40 (Part 2, No. 7B) ◽  
pp. L721-L723 ◽  
Author(s):  
Atsushi Kohno ◽  
Hideki Murakami ◽  
Mitsuhisa Ikeda ◽  
Seiichi Miyazaki ◽  
Masataka Hirose
Keyword(s):  
Quantum Dot ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Floating Gate ◽  
Oxide Semiconductor ◽  
Silicon Quantum Dot

Fabrication and Circuit Modeling of NMOS Inverter Based on Quantum Dot Gate Field-Effect Transistors

2012 ◽  
Vol 41 (8) ◽  
pp. 2184-2192 ◽  
Author(s):  
Supriya Karmakar ◽  
John A. Chandy ◽  
Mukesh Gogna ◽  
Faquir C. Jain
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Circuit Modeling

Atomic layer deposition effect on the electrical properties of Al2O3-passivated PbS quantum dot field-effect transistors

2015 ◽  
Vol 106 (9) ◽  
pp. 093507 ◽  
Author(s):  
Hye-Mi So ◽  
Hyekyoung Choi ◽  
Hyung Cheoul Shim ◽  
Seung-Mo Lee ◽  
Sohee Jeong ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Deposition Effect ◽  
Pbs Quantum Dot
Sign in / Sign up

Export Citation Format

Share Document