LOW FREQUENCY NOISE PARAMETERS IN AN AlGaN/GaN HETEROSTRUCTURE WITH 33% AND 75% Al MOLE FRACTION

2004 ◽  
Vol 14 (03) ◽  
pp. 762-768
Author(s):  
S. A. VITUSEVICH ◽  
S. V. DANYLYUK ◽  
N. KLEIN ◽  
M. V. PETRYCHUK ◽  
A. E. BELYAEV ◽  
...  
Keyword(s):  
Mole Fraction ◽  
Flicker Noise ◽  
Low Frequency ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Excess Noise ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
Non Linear

Transport and low frequency noise properties of undoped AlGaN/GaN high electron mobility transistor (HEMT) heterostructures with 33% and 75% Al mole fractions in the ohmic and non-linear regimes of applied voltages are studied. In contrast to the low Al mole fraction, the noise properties of 75 % content structures are not affected by passivation. At small voltages both kinds of structures demonstrate about the same level of l/f excess noise. Deviations from conventional flicker noise were observed at high applied voltages. Additionally, differences in noise behaviour between the two structures were revealed. In the 75% content structures, a noise level suppression was registered in the non-linear regime, which is important for the development of low noise oscillator circuits.

DEDICATED INSTRUMENTATION FOR HIGH SENSITIVITY, LOW FREQUENCY NOISE MEASUREMENT SYSTEMS

2004 ◽  
Vol 04 (02) ◽  
pp. L385-L402 ◽  
Author(s):  
C. CIOFI ◽  
G. GIUSI ◽  
G. SCANDURRA ◽  
B. NERI
Keyword(s):  
Background Noise ◽  
Flicker Noise ◽  
Low Frequency ◽  
High Sensitivity ◽  
Design Guidelines ◽  
Low Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Low Frequencies ◽  
Noise Measurements

Low Frequency Noise Measurements (LFNM) can be used as very sensitive tool for the characterization of the quality and the reliability of electron devices. However, especially in those cases in which the frequency range of interest extends below 1 Hz, instrumentation with an acceptable low level of background noise is not easily found on the market. In fact, at very low frequencies, the flicker noise introduced by the electronic components which make up the instrumentation becomes predominant and several interesting phenomena which could be detected by means of LFNM may result completely hidden in the background noise. This consideration is not limited to the case of input preamplifiers but does extend to any piece of instrumentation that contributes to the LFNM systems, and in particular to the power supplies used for biasing the Device Under Test. During the last few years, our research groups have been strongly involved in the design of very low noise instrumentation for application in the field of LFNM. In this work we report the main results which we have obtained together with a discussion of the design guidelines that have allowed us, in a few cases, to reach noise levels not to be equalled by any instrumentation available on the market.

scholarly journals A Chopper-Embedded BGR Composite Noise Reduction Circuit for Clock Generator

Electronics ◽  
2021 ◽  
Vol 10 (18) ◽  
pp. 2257
Author(s):  
Neeru Agarwal ◽  
Neeraj Agarwal ◽  
Chih-Wen Lu ◽  
Masahito Oh-e
Keyword(s):  
Flicker Noise ◽  
Noise Analysis ◽  
Low Frequency ◽  
Low Noise ◽  
Frequency Noise ◽  
Clock Generator ◽  
Low Frequency Noise ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Offset Voltage

A chopper-embedded bandgap reference (BGR) scheme is presented using 0.18 μm CMOS technology for low-frequency noise suppression in the clock generator application. As biasing circuitry produce significant flicker noise, along with thermal noise from passive components, the proposed low-noise chopper-stabilized BGR circuit was designed and implemented for wide temperature range of −40 to 125 °C, including a startup and self-biasing circuit to reduce critical low-frequency noise from the bias circuitry and op amp input offset voltage. The BGR circuit generated a reference voltage of 1.25 V for a supply voltage range of 2.5–3.3 V. The gain of the implemented BGR operational transconductance amplifier is 84.1 dB. A non-overlapping clock circuit was implemented to reduce the clock skew effect, which is also one of the noise contributors. The noise analysis of a chopped bandgap voltage reference was evaluated through cadence periodic steady-state (PSS) analysis and periodic noise (PNoise) analysis. The low-frequency flicker noise was reduced from 1.5 to 0.4 μV/sqrt(Hz) at 1 KHz, with the proposed chopping scheme in the bandgap. Comparisons of the noise performance of the chopper-embedded BGR, with and without a low-pass filter, were also performed, and the results show a further reduction in the overall noise. A reduction in the flicker noise, from 181.3 to 10.26 mV/sqrt(Hz) at 100 KHz, was observed with the filter. All circuit blocks of the proposed BGR scheme were designed and simulated using the EDA tool HSPICE, and layout generation was carried out by Laker. The BGR architecture layout dimensions are 285.25 μm × 125.38 μm.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors

2002 ◽  
Vol 80 (12) ◽  
pp. 2126-2128 ◽  
Author(s):  
S. A. Vitusevich ◽  
S. V. Danylyuk ◽  
N. Klein ◽  
M. V. Petrychuk ◽  
V. N. Sokolov ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Low-Frequency Noise Evaluation on a Commercial Magnetoimpedance Sensor at Submillihertz Frequencies for Space Magnetic Field Detection

Sensors ◽  
2019 ◽  
Vol 19 (22) ◽  
pp. 4888
Author(s):  
Tao Wang ◽  
Chen Kang ◽  
Guozhi Chai
Keyword(s):  
Magnetic Field ◽  
Low Frequency ◽  
Temperature Stability ◽  
Space Missions ◽  
Low Noise ◽  
Integration Time ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Field Detection ◽  
Measurement Limit

The purpose of this study was to measure the low-frequency noise and basic performance of a commercial magnetoimpedance (MI) sensor at sub-millihertz frequencies for use in space missions. Normally, space missions require measuring very weak magnetic fields with a long integration time, such as the space gravitational wave detection mission requiring sub-millihertz frequencies. We set up a platform for measuring the performance on this MI sensor, including low-frequency noise, measurement limit, linearity, and temperature stability. The results show that the low-frequency noise of the MI sensor is below 10 nT/√Hz at 1 mHz and below 100 nT/√Hz at 0.1 mHz; its measurement limit is 600 pT. The MI sensor is characterized by high precision, small size, and low noise, demonstrating considerable potential for application in magnetically sensitive experiments requiring long integration time. This is an effect way to solve the problem that there is on one suitable magnetic sensor at space magnetic field detection, but the sensor requires improvements in temperature stability.

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