Low-pressure superconductivity in lithium-doped methane predicted by first principles

Author(s):  
Ning Lu ◽  
Yu-Long Hai ◽  
Hai-Yan Lv ◽  
Wen-Jie Li ◽  
Chun-Lei Yang ◽  
...  

To explore the high-temperature superconductor at low pressures, we have investigated the crystal structures, electronic properties, and possible superconductivity in the case of methane (CH4) doped by lithium in the pressure range of [Formula: see text][Formula: see text]GPa, based on the first-principles calculations. The results show that Li-intercalated CH4 (Lix(CH4)[Formula: see text]) can realize metallization and superconductivity at low pressures, even 5[Formula: see text]GPa. We find that there is a charge transfer between Li and CH4, but the metallization is driven by the change of crystal field induce by doping instead of charge transfer. The critical temperture is predicted from 3.8[Formula: see text]K at 5[Formula: see text]GPa for LiCH4 to 12.1[Formula: see text]K at 100[Formula: see text]GPa for Li(CH4)4. The low-pressure superconductivity of Lix(CH4)[Formula: see text] can be further optimized by adjusting component and pressure.

2018 ◽  
Vol 20 (29) ◽  
pp. 19606-19613 ◽  
Author(s):  
Tanmay Sarkar ◽  
Kunkanadu R. Prakasha ◽  
Mridula Dixit Bharadwaj ◽  
Annigere S. Prakash

First principles calculations based on density functional theory were performed to understand the charge transfer mechanism and oxygen binding energy in Li1.17Ni0.17Mn0.5Co0.17O2.


2019 ◽  
Vol 5 (1) ◽  
Author(s):  
Ziji Shao ◽  
Defang Duan ◽  
Yanbin Ma ◽  
Hongyu Yu ◽  
Hao Song ◽  
...  

Abstract Inspired by the diverse properties of sulfur hydrides and phosphorus hydrides, we combine first-principles calculations with structure prediction to search for stable structures of Li−P−H ternary compounds at high pressures with the aim of finding novel superconductors. It is found that phosphorus hydrides can be stabilized under pressure via additional doped lithium. Four stable stoichiometries LiPH3, LiPH4, LiPH6, and LiPH7 are uncovered in the pressure range of 100–300 GPa. Notably, we find an atomic LiPH6 with $$Pm\overline 3$$ P m 3 ¯ symmetry which is predicted to be a potential high-temperature superconductor with a Tc value of 150–167 K at 200 GPa and the Tc decreases upon compression. All the predicted stable ternary hydrides contain the P–H covalent frameworks with ionic lithium staying beside, but not for $$Pm\overline 3$$ P m 3 ¯ -LiPH6. We proposed a possible synthesis route for ternary lithium phosphorus hydrides: LiP + H2 → LiPHn, which could provide helpful and clear guidance to further experimental studies. Our work may provide some advice on further investigations on ternary superconductive hydrides at high pressure.


RSC Advances ◽  
2015 ◽  
Vol 5 (73) ◽  
pp. 59292-59296 ◽  
Author(s):  
Xiaolei Feng ◽  
Jurong Zhang ◽  
Guoying Gao ◽  
Hanyu Liu ◽  
Hui Wang

First-principles calculations predicted a MgH6 phase with a high superconducting critical temperature of ∼260 K under high pressure.


1998 ◽  
Vol 537 ◽  
Author(s):  
Fernando A. Reboredo ◽  
Sokrates T. Pantelides

AbstractIt is well known that hydrogen plays a key role in p-type doping of GaN. It is believed that H passivates substitutional Mg during growth by forming a Mgs-N-Hi complex; in subsequent annealing, H is removed, resulting in p-type doping. Several open questions have remained, however, such as experimental evidence for other complexes involving Mg and H and difficulties in accounting for the relatively high-temperature anneal needed to remove H. We present first principles calculations in terms of which we show that the doping process is in fact significantly more complex. In particular, interstitial Mg plays a major role in limiting p-type doping. Overall, several substitutional/interstitial complexes form and can bind H, with vibrational frequencies that account for hitherto unidentified observed lines. We predict that these defects, which limit doping efficiency, can be eliminated by annealing in an atmosphere of H and N prior to the final anneal that removes H.


2020 ◽  
Vol 7 (12) ◽  
pp. 200723
Author(s):  
Hai Duong Pham ◽  
Wu-Pei Su ◽  
Thi Dieu Hien Nguyen ◽  
Ngoc Thanh Thuy Tran ◽  
Ming-Fa Lin

The essential properties of monolayer silicene greatly enriched by boron substitutions are thoroughly explored through first-principles calculations. Delicate analyses are conducted on the highly non-uniform Moire superlattices, atom-dominated band structures, charge density distributions and atom- and orbital-decomposed van Hove singularities. The hybridized 2 p z –3 p z and [2s, 2 p x , 2 p y ]–[3s, 3 p x , 3 p y ] bondings, with orthogonal relations, are obtained from the developed theoretical framework. The red-shifted Fermi level and the modified Dirac cones/ π bands/ σ bands are clearly identified under various concentrations and configurations of boron-guest atoms. Our results demonstrate that the charge transfer leads to the non-uniform chemical environment that creates diverse electronic properties.


2019 ◽  
Vol 13 (2) ◽  
pp. 124-131 ◽  
Author(s):  
Natarajan Kishore ◽  
Veerappan Nagarajan ◽  
Ramanathan Chandiramouli

First-principles calculations for CdSe and CdTe nanostructures were carried out to study their mechanical properties and band structure under the uniaxial pressure range of 0 to 50GPa. It was presumed that the CdSe and CdTe nanostructures exist in the zinc-blende phase under high pressure. The mechanical properties, such as elastic constants, bulk modulus, shear modulus and Young?s modulus, were explored. Furthermore, Cauchy pressure, Poisson?s ratio and Pugh?s criterion were studied under high pressure for both CdSe and CdTe nanostructures, and the results show that they exhibit ductile property. The band structure studies of CdSe and CdTe were also investigated. The findings show that the mechanical properties and the band structures of CdSe and CdTe can be tailored with high pressure.


Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 816 ◽  
Author(s):  
Chao Zhang ◽  
Yu Cao ◽  
Xing Dai ◽  
Xian-Yong Ding ◽  
Leilei Chen ◽  
...  

First-principles calculations were performed to investigate the effects of boron/nitrogen dopant on the geometry, electronic structure and magnetic properties of the penta-graphene system. It was found that the electronic band gap of penta-graphene could be tuned and varied between 1.88 and 2.12 eV depending on the type and location of the substitution. Moreover, the introduction of dopant could cause spin polarization and lead to the emergence of local magnetic moments. The main origin of the magnetic moment was analyzed and discussed by the examination of the spin-polarized charge density. Furthermore, the direction of charge transfer between the dopant and host atoms could be attributed to the competition between the charge polarization and the atomic electronegativity. Two charge-transfer mechanisms worked together to determine which atoms obtained electrons. These results provide the possibility of modifying penta-graphene by doping, making it suitable for future applications in the field of optoelectronic and magnetic devices.


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