GROWTH PROPERTY OF SILICON NANOWIRES UNDER OAG
2005 ◽
Vol 19
(01n03)
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pp. 683-685
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Keyword(s):
Using a simplified model, the surface energy of the Si / SiO 2 interface in silicon nanowires ( SiNWs ) is derived. Our theoretical results show that the nanowires along <112> and <110> have very low surface energy, so their yields should be high. Experimental observation testifies that the SiNWs fabricated by the oxide-assisted growth (OAG) are mostly of these two orientations. This supports the consideration that during growth process, surface energy is the chief factor to determine the axis orientation of nanowires under OAG.
Keyword(s):
Development of a Directly Patterned Low-Surface-Energy Polymer Brush in Supercritical Carbon Dioxide
2009 ◽
Vol 1
(9)
◽
pp. 2013-2020
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Keyword(s):
Keyword(s):
2015 ◽
Vol 3
(38)
◽
pp. 19299-19303
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Keyword(s):