Point-contact Andreev reflection spectroscopy on Bi2Se3 single crystals
To study how Andreev reflection (AR) occurs between a superconductor and a three-dimensional topological insulator (TI), we use superconducting Nb tips to perform point-contact AR spectroscopy at 4.2 K on as-grown single crystals of Bi2Se3. Scanning tunneling spectroscopy and scanning tunneling microscopy are also used to characterize the superconducting tip and both the doping level and surface condition of the TI sample. The point-contact measurements show clear spectral signatures of AR, as well as a depression of zero-bias conductance with decreasing junction impedance. The latter observation can be attributed to interfacial Rashba spin-orbit coupling, and the presence of bulk bands at the Fermi level in our samples suggests that bulk states of Bi2Se3 are involved in the observed AR.