scholarly journals Large nonlinear Hall effect in (FeCo)0.67Ge0.33/Ge heterojunctions

2019 ◽  
Vol 33 (13) ◽  
pp. 1950121 ◽  
Author(s):  
Juan Pei ◽  
Shu-Qin Xiao ◽  
Li-Min He ◽  
Kun Zhang ◽  
Huan-Huan Li ◽  
...  
Keyword(s):  
Hall Effect ◽  
Potential Barrier ◽  
Coupling Effect ◽  
Magnetic Semiconductor ◽  
Anomalous Hall Effect ◽  
Hall Resistance ◽  
Band Model ◽  
Semiconductor Films ◽  
Text Type ◽  
Interfacial Potential

The large nonlinear Hall effect was found in (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions formed by sputtering amorphous [Formula: see text]-type (FeCo)[Formula: see text]Ge[Formula: see text] magnetic semiconductor films on near intrinsic n-type Ge substrate. It is very interesting that the mechanisms of the large nonlinear Hall effect in (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions are different at different temperature ranges. Below 10 K, the Hall resistance of (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions is almost the same as the anomalous Hall effect of (FeCo)[Formula: see text]Ge[Formula: see text] ferromagnetic films. While the temperature increased from 10 to 60 K, the nonlinear Hall resistance, longitudinal conductance, and magnetoresistance all increased quickly and reached the maximum at T[Formula: see text]=[Formula: see text]60 K. In this case, thermally excited conducting carriers can tunnel through the interfacial potential barrier in (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions. Thus, in the range of 10–60 K, the enhanced nonlinear Hall resistance can be attributed to the anomalous Hall effect which was further enhanced by interfacial Rashba spin–orbit coupling effect. When the temperature further increased from 60 to 250 K, the interfacial potential barrier weakened gradually, and the Hall resistance and magnetoresistance decreased due to the shunting of the Ge substrate. In this case, the nonlinear Hall effect of (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions can be explained very well by the two-band model of nonlinear Hall effect.

The Impurity Spin-Dependent Scattering Effects in the Transport and Spin Resonance of Conduction Electrons in Bismuth Doped Silicon

2015 ◽  
Vol 242 ◽  
pp. 327-331 ◽  
Author(s):  
Andrey V. Soukhorukov ◽  
Davud V. Guseinov ◽  
Alexei V. Kudrin ◽  
Sergey A. Popkov ◽  
Alexandra P. Detochenko ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Anomalous Hall Effect ◽  
Hall Resistance ◽  
Resonance Spectroscopy ◽  
Electron Spin Relaxation ◽  
Conduction Electrons ◽  
Spin Resonance ◽  
Hall Effect Measurements

Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1·1013- 7.7·1015cm-3concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurements in the temperature range 10-80 K showed a deviation from the linear dependence of the Hall resistance in the magnetic field, which is a manifestation of the anomalous Hall effect. The magnetoresistance investigation shows that with current increasing magnetoresistance may change its sign from positive to negative, which is most clearly seen when the bismuth concentration goes up to 7.7·1015cm-3. The conduction electron spin relaxation rate dramatically increases in silicon samples with sufficiently low concentration of bismuth ~ 2·1014cm-3. All these results can be explained in terms of the concept of spin-dependent and spin flip scattering induced by heavy bismuth impurity centers.

Anomalous hall effect in the In1 − x Mn x Sb dilute magnetic semiconductor with MnSb inclusions

JETP Letters ◽  
2015 ◽  
Vol 101 (2) ◽  
pp. 130-135 ◽  
Author(s):  
E. I. Yakovleva ◽  
L. N. Oveshnikov ◽  
A. V. Kochura ◽  
K. G. Lisunov ◽  
E. Lahderanta ◽  
...  
Keyword(s):  
Hall Effect ◽  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Anomalous Hall Effect

scholarly journals HALL EFFECT STUDIES OF THE SUPERCONDUCTING FERROMAGNET UCoGe

2017 ◽  
Vol 35 (2) ◽  
Author(s):  
Danica Krstovska ◽  
Eden Steven ◽  
Andhika Kiswandhi ◽  
James S. Brooks
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Simple Relation ◽  
Hall Resistance ◽  
Unusual Behavior ◽  
Perpendicular Component ◽  
Induced Changes ◽  
The Magnetic Field ◽  
Characteristic Field

We find that the Hall effect in a single crystal of UCoGe varies as a function of the angle  between the applied magnetic field and the easy magnetic axis up to fields of 18 T at 0.2 K, i.e. in the region where both superconductivity and ferromagnetic order coexist. Instead of following the conventional cos dependence the two components that com-prise the total Hall resistance, the anomalous and ordinary Hall effect, exhibit quite an unusual behavior with the field direction. The anomalous Hall effect is found to be determined by the parallel component of the magnetization. We sug-gest that the field induced changes in magnetization due to the field rotation play an important role in the observed unu-sual behavior. The ordinary Hall effect cannot be described by the simple relation to the perpendicular component of the magnetic field implying that this component of the Hall effect may be also affected by the variations in magnetization at the characteristic field (kink field). A field induced moment polarization is also observed in Hall effect as in magnetore-sistance, which advances previous findings in UCoGe. The Hall effect slope reverses sign at the kink field indicative of small but possible Fermi surface reconstruction around this field. Our findings show that in UCoGe multiple mecha-nisms contribute to the observed field induced moment polarization at the kink field.

Oxidized Mn:Ge magnetic semiconductor: Observation of anomalous Hall effect and large magnetoresistance

2018 ◽  
Vol 532 ◽  
pp. 119-125
Author(s):  
Dang Duc Dung ◽  
Jiyoun Choi ◽  
Wuwei Feng ◽  
Nguyen Cao Khang ◽  
Sunglae Cho
Keyword(s):  
Hall Effect ◽  
Magnetic Semiconductor ◽  
Anomalous Hall Effect

scholarly journals Quantum Anomalous Hall Effect and Tunable Topological States in 3d Transition Metals Doped Silicene

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
Xiao-Long Zhang ◽  
Lan-Feng Liu ◽  
Wu-Ming Liu
Keyword(s):  
Transition Metals ◽  
Hall Effect ◽  
Coupling Effect ◽  
Anomalous Hall Effect ◽  
Quantum Anomalous Hall Effect ◽  
Band Inversion ◽  
Topological States ◽  
Stable Quantum ◽  
Metal Doped ◽  
Silicon Based

Abstract Silicene is an intriguing 2D topological material which is closely analogous to graphene but with stronger spin orbit coupling effect and natural compatibility with current silicon-based electronics industry. Here we demonstrate that silicene decorated with certain 3d transition metals (Vanadium) can sustain a stable quantum anomalous Hall effect using both analytical model and first-principles Wannier interpolation. We also predict the quantum valley Hall effect and electrically tunable topological states could be realized in certain transition metal doped silicene where the energy band inversion occurs. Our findings provide new scheme for the realization of quantum anomalous Hall effect and platform for electrically controllable topological states which are highly desirable for future nanoelectronics and spintronics application.

Superparamagnetism, magnetoresistance and anomalous Hall effect in amorphous Mn x Si 1 − x semiconductor films

2015 ◽  
Vol 623 ◽  
pp. 438-441 ◽  
Author(s):  
Ai-chun Yang ◽  
Kun Zhang ◽  
Shi-shen Yan ◽  
Shi-shou Kang ◽  
Yu-feng Qin ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Semiconductor Films

scholarly journals Ultrasensitive Anomalous Hall Effect in Ta/CoFe/Oxide/Ta Multilayers

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Guang Yang ◽  
Yongye Li ◽  
Xi Chen ◽  
Jingyan Zhang ◽  
Guanghua Yu
Keyword(s):  
Magnetic Anisotropy ◽  
Hall Effect ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Anomalous Hall Effect ◽  
Annealing Process ◽  
Hall Resistance ◽  
Oxide Material ◽  
Two Samples ◽  
New Perspective

Ultrahigh anomalous Hall sensitivity has been demonstrated in Ta/CoFe/Oxide/Ta multilayers. By changing oxides (MgO and HfO2) and annealing temperature, different annealing dependence of sensitivity was found in MgO-sample and HfO2-sample. For the MgO-sample, the anomalous Hall sensitivity reaches 18792 Ω/T in the as-deposited state and significantly reduces as annealing temperature increases. On the contrary, the sensitivity of the as-deposited HfO2-sample is only 765 Ω/T, while it remarkably increases with annealing temperature increasing, finally reaching 14741 Ω/T at 240°C. The opposite variation of anomalous sensitivity in two samples originates from the different change of magnetic anisotropy and anomalous Hall resistance during the annealing process. Our study provides a new perspective that both the choice of oxide material and the optimization of annealing treatment are important to the anomalous Hall sensitivity.

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