INTERFACIAL SEGREGATION IN α-IRON

1993 ◽  
Vol 07 (01n03) ◽  
pp. 528-533 ◽  
Author(s):  
PAVEL LEJČEK

Measurements of solute segregation to free surfaces and grain boundaries in well-defined samples of α-Fe-Si model alloys revealed pronounced differences. Segregation of C and P and depletion of Si are characteristic for grain boundaries. Cosegregation of Si and N resulting in formation of silicon nitrides prevails at the majority of free surfaces in samples containing nitrogen, but S segregation dominates at the surfaces of nitrogen free samples. The results are summarized from the viewpoint of the type of interface, alloy composition and segregation temperature.

1992 ◽  
Vol 269-270 ◽  
pp. 1147-1151 ◽  
Author(s):  
P. Lejček ◽  
A.V. Krajnikov ◽  
Yu.N. Ivashchenko ◽  
J. Adámek

1993 ◽  
Vol 280 (3) ◽  
pp. 325-334 ◽  
Author(s):  
P. Lejček ◽  
A.V. Krajnikov ◽  
Yu.N. Ivashchenko ◽  
M. Militzer ◽  
J. Adámek

1993 ◽  
Vol 280 (3) ◽  
pp. A143
Author(s):  
P. Lejček ◽  
A.V. Krajnikov ◽  
Yu.N. Ivashchenko ◽  
M. Militzer ◽  
J. Adámek

Author(s):  
J. R. Michael ◽  
C. H. Lin ◽  
S. L. Sass

The segregation of solute atoms to grain boundaries in polycrystalline solids can be responsible for embrittlement of the grain boundaries. Although Auger electron spectroscopy (AES) and analytical electron microscopy (AEM) have verified the occurrence of solute segregation to grain boundaries, there has been little experimental evidence concerning the distribution of the solute within the plane of the interface. Sickafus and Sass showed that Au segregation causes a change in the primary dislocation structure of small angle [001] twist boundaries in Fe. The bicrystal specimens used in their work, which contain periodic arrays of dislocations to which Au is segregated, provide an excellent opportunity to study the distribution of Au within the boundary by AEM.The thin film Fe-0.8 at% Au bicrystals (composition determined by Rutherford backscattering spectroscopy), ∼60 nm thick, containing [001] twist boundaries were prepared as described previously. The bicrystals were analyzed in a Vacuum Generators HB-501 AEM with a field emission electron source and a Link Analytical windowless x-ray detector.


1969 ◽  
Vol 3 (9) ◽  
pp. 663-665 ◽  
Author(s):  
S.J. Bercovici ◽  
P. Niessen ◽  
J.J. Byerley

1998 ◽  
Vol 4 (S2) ◽  
pp. 772-773
Author(s):  
J.T. Busby ◽  
E.A. Kenik ◽  
G.S. Was

Radiation-induced segregation (RIS) is the spatial redistribution of elements at defect sinks such as grain boundaries and free surfaces during irradiation. This phenomenon has been studied in a wide variety of alloys and has been linked to irradiation-assisted stress corrosion cracking (IASCC) of nuclear reactor core components. However, several recent studies have shown that Cr and Mo can be enriched to significant levels at grain boundaries prior to irradiation as a result of heat treatment. Segregation of this type may delay the onset of radiation-induced Cr depletion at the grain boundary, thus reducing IASCC susceptibility. Unfortunately, existing models of segregation phenomena do not correctly describe the physical processes and therefore are grossly inaccurate in predicting pre-existing segregation and subsequent redistribution during irradiation. Disagreement between existing models and measurement has been linked to potential interactions between the major alloying elements and lighter impurity elements such as S, P, and B.


1983 ◽  
Vol 23 ◽  
Author(s):  
Jun-ichi Chikawa ◽  
Fumio Sato ◽  
Tadasu Sunada

ABSTRACTAtomic processes at the interface in regrowth following laser induced melting were investigated by observing behavior of impurity segregation. The interfacial segregation coefficient k* was obtained from depth profiles of solute atoms redistributed by laser irradiation of uniformly doped Si, Ge, and GayAl1−yAs crystals. It was found that k*=k0 for B in Si, Ga in Ge ih the growth rate range of 1 m/s. It is concluded that rapid growth freezes a state of liquid monolayer adjacent to the interface which has the character of ideal solution from dilute to eutectic composition for dopant-silicon systems and in the entire range of composition for the mixed crystal.


1993 ◽  
Vol 1 (1) ◽  
Author(s):  
H.Y. Wang ◽  
R. Najafabadi ◽  
D.J. Srolovitz ◽  
R. Lesar

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