Novel Mocvd Processes for Nanoscale Oxide Thin Films

1996 ◽  
Vol 446 ◽  
Author(s):  
Tingkai Li ◽  
Pete Zawadzkp ◽  
Richard A. Stall ◽  
Yongfei Zhu ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Integrated Circuits ◽  
Deposition Temperature ◽  
High Dielectric Constant ◽  
Ferroelectric Properties ◽  
Oxide Thin Films ◽  
High Quality ◽  
Step Process ◽  
High Dielectric

AbstractNanoscale oxide thin films such as Ba1‐xSrxTiO3 (BST), SrBi2Ta2O9 (SBT), and PbZr1‐xTixO3 (PZT) that have a high dielectric constant and excellent ferroelectric properties have been receiving greatly increased attention, especially for high density memories in next generation integrated circuits. However, with increasing deposition temperature the surface roughness of the films increases, which results in high leakage current, and when the thickness of oxide films is decreased, the apparent bulk‐like properties of thin films tend to worsen due to the increased influence of the interface. To solve these problems, novel MOCVD techniques, plasma enhanced deposition, and a two step process, were developed for high quality oxide thin films.

Copper drift in high-dielectric-constant tantalum oxide thin films under bias temperature stress

2006 ◽  
Vol 88 (14) ◽  
pp. 143502 ◽  
Author(s):  
Pushkar Jain ◽  
Jasbir S. Juneja ◽  
A. Mallikarjunan ◽  
E. J. Rymaszewski ◽  
T.-M. Lu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Temperature Stress ◽  
High Dielectric Constant ◽  
Tantalum Oxide ◽  
Oxide Thin Films ◽  
Bias Temperature Stress ◽  
High Dielectric

MOCVD of High-Dielectric-Constant Lanthanum Oxide Thin Films

2003 ◽  
Vol 150 (8) ◽  
pp. G429 ◽  
Author(s):  
Hirotoshi Yamada ◽  
Takashi Shimizu ◽  
Akira Kurokawa ◽  
Kenichi Ishii ◽  
Eiichi Suzuki
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Lanthanum Oxide ◽  
High Dielectric Constant ◽  
Oxide Thin Films ◽  
High Dielectric

Surface Structure and Morphology of SrBi2Ta2O9 (SBT) Thin Films

1996 ◽  
Vol 440 ◽  
Author(s):  
Tingkai Li ◽  
Pete Zawadzki ◽  
Richard A. Stall ◽  
Chien-Hsiung Peng ◽  
Yongfei Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Surface Structure ◽  
Grain Growth ◽  
Phase Formation ◽  
Deposition Temperature ◽  
Electric Properties ◽  
Step Process ◽  
Structure And Morphology ◽  
Structure Morphology

AbstractSrBi2Ta2O9 (SBT) films have been prepared by MOCVD processes. The phase formation, surface structure, morphology and surface roughness of SBT films on Pt/Ti/SiO2/Si wafers were measured by XRD, SEM, AFM and ellipsometry. It was found that amorphous SBT formed below 500°C, amorphous and polycrystalline growth occurred successively between 500°C and 650°C. The surface roughness of the SBT thin films also increased with increasing deposition temperature. The AFM results showed the nucleation of SBT started by island formation, then continued across the surface of substrates at lower deposition temperatures. When the SBT film was deposited at higher temperatures, the nucleation and grain growth occurred at the same time, resulting in an inhomogencous structure and much higher surface roughness. Therefore, a two step process is used to improve surface roughness and interface mismatch between film and substrate. In addition, the relationships between surface structure, morphology and the electric properties of SBT thin films were also investigated.

Synthesis of High Dielectric Constant Titanium Oxide Thin Films by Metalorganic Decomposition

2002 ◽  
Vol 41 (Part 1, No. 11B) ◽  
pp. 6912-6915 ◽  
Author(s):  
Hisashi Fukuda ◽  
Shinichi Maeda ◽  
K. M. A. Salam ◽  
Shigeru Nomura
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Titanium Oxide ◽  
High Dielectric Constant ◽  
Oxide Thin Films ◽  
Metalorganic Decomposition ◽  
High Dielectric

Microstructure Control in Mocvd PZT Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
Daesig Kim ◽  
Tae-Young Kim ◽  
June Key Lee ◽  
W. Tao ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Process Parameters ◽  
Deposition Temperature ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Fine Grained ◽  
Pzt Films ◽  
First Time

AbstractIt was shown that Pb(ZrxTi1−x)O3 thin films (PZT) can be successfully deposited by metalorganic chemical vapor deposition (MOCVD) in a wide deposition temperature range starting from 400°C to 600°C. Variations in texture, morphology and grain size of the films as a function of process parameters were systematically investigated by x-ray diffraction (XRD) and scanning electron microscopy (SEM). The deposition temperature and gas composition in the reactor are the two key parameters that control the film microstructure. The accompanying changes in the ferroelectric properties with respect to the variations of the process parameters will also investigated. In addition, we found an interrelationship between the grain orientation and surface roughness of the films. Films with (111) preferred orientation are significantly smoother than the films with other preferred orientations. We also demonstrate, for the first time, fine grained PZT films with very low surface roughness, which show excellent electrical properties can be obtained by lowering the deposition temperature (e.g. 430°C)

Microstructural and optical properties of high-quality Mg–Zn oxide thin films

2021 ◽  
Vol 127 ◽  
pp. 105690
Author(s):  
A. Sáenz-Trevizo ◽  
D. Kuchle-Mena ◽  
P. Pizá-Ruiz ◽  
P. Amézaga-Madrid ◽  
O. Solís-Canto ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxide Thin Films ◽  
High Quality

Hydrothermal synthesis of heteroepitaxial Pb(ZrxTi1−x)O3 thin films at 90–150 °C

1997 ◽  
Vol 12 (5) ◽  
pp. 1176-1178 ◽  
Author(s):  
A. T. Chien ◽  
J. S. Speck ◽  
F. F. Lange
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
High Dielectric Constant ◽  
Ambient Pressure ◽  
Random Access ◽  
Random Access Memory ◽  
Molar Ratio ◽  
Access Memory ◽  
Eds Analysis ◽  
High Dielectric

Pb(ZrxTi1−x)O3 and PbZrO3 heteroepitaxial thin films were produced in an aqueous solution (10 M KOH) at ambient pressure and low temperatures (90–150 °C) on (001) SrTiO3 and LaAlO3 single crystal substrates. Growth of the Pb(ZrxTi1−x)O3 and PbZrO3 thin films initiates by the formation of {100} faceted islands. Energy dispersive spectroscopy (EDS) analysis of the Pb(ZrxTi1−x)O3 thin film shows that the Zr: Ti ratio is 45: 56, nearly identical to the molar ratio of the precursors. This route might provide a viable low temperature alternative for the formation of high dielectric constant thin films for applications such as dynamic random access memory (DRAM).

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