Synthesis of Nanophase TiO2 by Ion Beam Sputtering and Cold Condensation Technique

1998 ◽  
Vol 12 (25) ◽  
pp. 2635-2647 ◽  
Author(s):  
L. V. Saraf ◽  
S. I. Patil ◽  
S. B. Ogale ◽  
S. R. Sainkar ◽  
S. T. Kshirsager
Keyword(s):  
Particle Size ◽  
Ion Beam ◽  
Average Particle Size ◽  
Average Particle ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Beam Sputtering ◽  
Cold Condensation ◽  
20 Nm

Nanoparticles of TiO 2 have been synthesized by an ion beam sputtering-cold condensation (IBS-CC) technique. A sintered TiO 2 was sputtered by an ion beam (Kaufman source, 900 eV, Ar+ ions) and the ejected atoms/radicals were made to condense on a Si(l00) substrate held at -50°C. X-ray diffraction data showed that the average particle size in the as-deposited material is about 3.5 ± 1.5 nm. Upon annealing at 600°C for five hours, the average particle size was seen to increase to about 70 ± 10 nm. Further annealing for one hour at 900°C led to increase of average particle size to 200 ± 20 nm. X-ray spectroscopy, Raman spectroscopy and photoluminescence data have been used to reveal the presence and relative concentrations of rutile and anatase phases of TiO 2 in the as-deposited and annealed samples. The IBS-CC method is found to yield a more compact particle size distribution as compared to the method based on Laser Ablation.

scholarly journals Thermal, Structural, and Physical Properties of Freeze Dried Tropical Fruit Powder

2014 ◽  
Vol 2014 ◽  
pp. 1-10 ◽  
Author(s):  
K. A. Athmaselvi ◽  
C. Kumar ◽  
M. Balasubramanian ◽  
Ishita Roy
Keyword(s):  
Particle Size ◽  
Physical Properties ◽  
Average Particle Size ◽  
Average Particle ◽  
X Ray Diffraction ◽  
Tropical Fruit ◽  
X Ray ◽  
Freeze Dried ◽  
Fruit Powder ◽  
Lcr Meter

This study evaluates the physical properties of freeze dried tropical (guava, sapota, and papaya) fruit powders. Thermal stability and weight loss were evaluated using TGA-DSC and IR, which showed pectin as the main solid constituent. LCR meter measured electrical conductivity, dielectric constant, and dielectric loss factor. Functional groups assessed by FTIR showed presence of chlorides, and O–H and N–H bonds in guava, chloride and C–H bond in papaya, and chlorides, and C=O and C–H bonds in sapota. Particle size and type of starch were evaluated by X-ray diffraction and microstructure through scanning electronic microscopy. A semicrystalline profile and average particle size of the fruit powders were evidenced by X-ray diffraction and lamellar/spherical morphologies by SEM. Presence of A-type starch was observed in all three fruits. Dependence of electric and dielectric properties on frequency and temperature was observed.

Relationship Between Microstructure and Hardness of ZrN/TiN Multi-Layers with Various Bilayer Thicknesses

2010 ◽  
Vol 63 ◽  
pp. 392-395
Author(s):  
Yoshifumi Aoi ◽  
Satoru Furuhata ◽  
Hiromi Nakano
Keyword(s):  
Mechanical Property ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Microstructure And Mechanical Property

ZrN/TiN multi-layers were synthesized by ion beam sputtering technique. Microstructure and mechanical property of the ZrN/TiN multi-layers were characterized and the relationships between microstructure and hardness of the ZrN/TiN multi-layers with various bilayer thicknesses and thickness ratios were investigated. The microstructure of multi-layers have been investigated using transmission electron microscope (TEM) and X-ray diffraction (XRD).

scholarly journals Study of XUV beam splitter flatness for use on a Michelson interferometer

2004 ◽  
Vol 22 (3) ◽  
pp. 279-284 ◽  
Author(s):  
ANNE-SOPHIE MORLENS ◽  
PHILIPPE ZEITOUN ◽  
LAURENT VANBOSTAL ◽  
PASCAL MERCERE ◽  
GRÉGORY FAIVRE ◽  
...  
Keyword(s):  
Beam Splitter ◽  
Ion Beam ◽  
Michelson Interferometer ◽  
Fourier Transform Spectrometer ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
Interference Fringes ◽  
Beam Sputtering ◽  
20 Nm ◽  
Better Than

A XUV Michelson interferometer has been developed by LIXAM/CEA/LCFIO and has been tested as a Fourier-transform spectrometer for measurement of X-ray laser line shape. The observed strong deformation of the interference fringes limited the interest of such an interferometer for plasma probing. Because the fringe deformation was coming from a distortion of the beam splitter (5 × 5 mm2open aperture, about 150 nm thick), several parameters of the multilayer deposition used for the beam splitter fabrication have been recently optimized. The flatness has been improved from 80 nm rms obtained by using the ion beam sputtering technique, to 20 nm rms by using the magnetron sputtering technique. Over 3 × 3 mm2, the beam splitter has a flatness better than 4 nm rms.

The Effect of Self-Implantation on the Interdiffusion in Amorphous Si/Ge Multilayers

1986 ◽  
Vol 74 ◽  
Author(s):  
B. Park ◽  
F. Spaepen ◽  
J. M. Poate ◽  
D. C. Jacobson
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Average Composition ◽  
X Ray ◽  
Composition Modulation ◽  
Beam Sputtering ◽  
Mixing Distance ◽  
Diffraction Peaks ◽  
Amorphous Si

AbstractArtificial amorphous Si/Ge multilayers of equiatomic average composition with a repeat length around 60 Å have been prepared by ion beam sputtering. Implantation with 29Si led to a decrease in the intensity of the X-ray diffraction peaks arising from the composition modulation, which could be used for an accurate measurement of the implantation-induced mixing distance. Subsequent annealing showed no difference between the interdiffusivity in an implanted and unimplanted sample.

Contamination Effects in Mo/Ni Superlattices

1991 ◽  
Vol 229 ◽  
Author(s):  
Steven M. Hues ◽  
John L. Makous
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Bilayer Thickness ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Impurity Incorporation ◽  
X Ray ◽  
Beam Sputtering ◽  
Deposited Films

AbstractA softening of the shear elastic constant c44 has been observed previously in Mo/Ni superlattices as a function of decreasing bilayer thickness below approximately 100 Å.[1] We have prepared a series of Mo/Ni superlattice films by ion beam sputtering doped with varying concentrations of either aluminum or oxygen. The chemical and structural properties of these films were then determined using x-ray diffraction (XRD) and Auger electron spectroscopy (AES). The shear elastic properties were characterized by measuring the surface acoustic wave (SAW) velocity of the deposited films. We demonstrate structural and elastic property effects resulting from Al and O impurity incorporation in Mo/Ni multilayers.

In-Plane Magnetic and Structural Anisotropies in NI and FE Films Produced by Ion-Assisted Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
W. A. Lewis ◽  
M. Farle ◽  
B. M. Clemens ◽  
R. L. White
Keyword(s):  
Ion Beam ◽  
Anisotropy Field ◽  
Angle Of Incidence ◽  
Induced Anisotropy ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Out Of Plane ◽  
Beam Sputtering

ABSTRACTWe report the results of our microstructural investigations into the origin of in-plane uniaxial magnetic anisotropies induced in Ni and Fe thin films by low energy ion beam assisted deposition. 1000 Å films were prepared by ion beam sputtering onto amorphous silica substrates under simultaneous bombardment by 100 eV Xe+ ions under an oblique angle of incidence. The induced anisotropy is studied as a function of ion-to-adsorbate atom arrival ratio, R, from values of 0 to 0.35. The maximum anisotropy field is 150 Oe for Ni and 80 Oe for Fe, but their hard axes are oriented orthogonal to each other. Asymmetric x-ray diffraction is employed to study both in-plane and out-of-plane lattice spacings and crystallographic orientation. In agreement with previous work, we find evidence of a anisotropic in-plane strain of magnitude 0.2-0.5%. In all films, the direction perpendicular to the ion bombardment is compressed relative to parallel. The uniaxial magnetic anisotropy is correlated with this in-plane anisotropic strain using a simple magnetoelastic model.

Synthesis and Characterization of High Density and Low Temperature Sintered Proton Conductor BaCe0.5Zr0.35In0.1Zn0.05O3-δ

2015 ◽  
Vol 1098 ◽  
pp. 104-109 ◽  
Author(s):  
Abul Kalam Azad ◽  
D.D.Y. Setsoafia ◽  
L.C. Ming ◽  
Iskandar Petra
Keyword(s):  
Particle Size ◽  
Average Particle Size ◽  
Proton Conductor ◽  
Solid State Reaction Method ◽  
Proton Conductors ◽  
Orthorhombic Symmetry ◽  
Average Particle ◽  
X Ray Diffraction ◽  
X Ray ◽  
Proton Uptake

Rare-earth-doped BaCeO3and BaZrO3electrolytes with perovskite structure have been studied extensively in developing proton conducting intermediate temperature SOFC. Acceptor doped alkaline earth cerates and zirconates have been thoroughly studied because of the great interest in their possible applications as solid proton conductors. The perovskite type proton conductor BaCe0.5Zr0.35In0.1Zn0.05O3-δwas prepared in the traditional solid state reaction method. The density of the sample obtained about 96% of the theoretical density after sintering at 1350 °C and X-ray diffraction study confirms the pure phase. Rietveld refinement of the neutron and X-ray powder diffraction data shows that this material crystallizes in the orthorhombic symmetry in the space group Pm3m. Particle size measurement shows that the average particle size is about 2.4 μm. The average thermal expansion at 894 °C was 9.49 x 10-6/°C. Thermogravimetric analysis (TGA) traces obtained for the sample on heating in wet air shows that the maximum proton uptake occurs from 595 °C.

Interface Reactions and Electrical Properties of Ta/4H-SiC Contacts

2007 ◽  
Vol 556-557 ◽  
pp. 713-716 ◽  
Author(s):  
Yu Cao ◽  
S. Alfonso Pérez-García ◽  
Lars Nyborg
Keyword(s):  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
High Vacuum ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Interface Reactions ◽  
Beam Sputtering ◽  
Sic Wafer

This study deals with the interfacial reactions and electrical properties of Ta/4H-SiC contacts. Tantalum thin films (~100 nm) were deposited onto SiC wafer at room temperature by argon ion beam sputtering. The samples were then heated in high vacuum at 650°C, 800°C or 950°C for 30 min. X-ray photoelectron spectroscopy (XPS), glancing angle X-ray diffraction (XRD), Auger electron spectroscopy (AES) and current-voltage (I-V) technique were used for characterising the samples. Ohmic contact is formed in the studied samples after annealing at or above 800°C even though considerable amount of metallic Ta still exists. The reaction zone possesses a layered structure of Ta2C/Ta2C+Ta5Si3/SiC. High enough temperature is needed to provide for sufficient interface change to tailor the contact properties.

Investigation of YSZ Thin Films on Silicon Wafer and NiO/YSZ Deposited by Ion Beam Sputtering Deposition (IBSD)

2007 ◽  
Vol 336-338 ◽  
pp. 1788-1790
Author(s):  
Yu Ju Chen ◽  
Wen Cheng J. Wei
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Sputtering Deposition ◽  
X Ray ◽  
Crystal Growth Process ◽  
Transmission Electron ◽  
Beam Sputtering

Ion-beam sputtering deposition is a physical deposited method which uses accelerated ionbeam to sputter oxide or metal targets, and deposits atoms on substrate. Thin films of yttrium-stabilized zirconia (YSZ) were deposited on Si (100) wafer and NiO/YSZ plate. Scanning electron microscopy and transmission electron microscopy with EDS were employed to study the microstructural and chemically stoichiometric results of the films and the crystal growth process by various heat treatments. X-ray diffraction was also used to analysis crystalline phase of the YSZ films. The influence of different targets, substrates deposited efficiency and the properties of the film will be presented and discussed.

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