ANALYSIS OF REDISTRIBUTION OF RADIATION DEFECTS TAKING INTO ACCOUNT DIFFUSION AND SEVERAL SECONDARY PROCESSES

2008 ◽  
Vol 22 (28) ◽  
pp. 2779-2791 ◽  
Author(s):  
E. L. PANKRATOV
Keyword(s):  
Ion Implantation ◽  
Point Defects ◽  
Analytical Approach ◽  
Irradiation Time ◽  
Defect Concentration ◽  
Radiation Defects ◽  
Space And Time ◽  
Dose Irradiation ◽  
Semiconductor Sample

In this paper, we analyzed the evolution of concentration of radiative defects, which is generated in a semiconductor sample during ion implantation. Approximate analytical approach for the description of the evolution of concentration of radiative defects with account diffusion and some secondary processes (recombination of the point defects and generation of divacancies) has been used. Discontinuity of the ions in space and time has been also accounted. The main results are: (i) the estimation of dependencies of the defect concentration from depth at different values of dose (irradiation time), (ii) the different amorphization doses from the density of current of the ions for the more common case in comparison with those considered in literature. As an example, we consider the implantation of ions of neon into a sample of the silicon.

scholarly journals An approach to model and optimization of manufacturing of an enhanced swing differential Colpitts oscillator. on influence of miss-match induced stress

2020 ◽  
Vol 12 (02) ◽  
pp. 12-32
Author(s):  
E.L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Radiation Defects ◽  
Colpitts Oscillator ◽  
Induced Stress ◽  
Specific Configuration

In this paper we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress

scholarly journals On Model of Manufacturing of an Integrated Circuits Based on Hetero-Structures Under Influence of Mismatch-Induced Stress and Porosity of Materials

2021 ◽  
Vol 23 (1) ◽  
pp. 1-53
Author(s):  
E. L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Radiation Defects ◽  
Induced Stress ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework a downconversion mixer circuit. Framework the approach we consider manufacturing the mixer in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should be annealed by framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

scholarly journals An analytical approach for prognosis of mass transport during manufacturing of a limiting amplifier circuit. On increasing of integration rate of elements of the amplifier

2019 ◽  
Vol 8 (1) ◽  
pp. 53-61
Author(s):  
Evgeny L. Pankratov
Keyword(s):  
Ion Implantation ◽  
Mass Transport ◽  
Annealing Time ◽  
Analytical Approach ◽  
Radiation Defects ◽  
Amplifier Circuit ◽  
Spatial Coordinate ◽  
Limiting Amplifier

In this paper we introduce an analytical approach for prognosis of mass transport during manufacturing of a limiting amplifier circuit. Based on this approach we obtain conditions to increase density of elements of this circuit, manufactured by diffusion or ion implantation with optimized annealing time of dopant and/or radiation defects. The above analytical approach gives a possibility to take into account nonlinearity of the mass transport, dependences of parameters of the transport on spatial coordinate and time.

An analytical approach to model manufacturing a drift heterobipolar transistors: On approach to optimize technological process to increase integration rate

2015 ◽  
Vol 04 (01) ◽  
pp. 1550006
Author(s):  
E. L. Pankratov ◽  
E. A. Bulaeva
Keyword(s):  
Ion Implantation ◽  
Technological Process ◽  
Analytical Approach ◽  
Spatial Configuration ◽  
Radiation Defects

In this paper, we introduce an approach to increase integration rate of drift heterobipolar transistors. The approach is based on manufacturing of heterostructure with spatial configuration, doping of required areas of the heterostructure by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects.

scholarly journals On Optimization of Manufacturing of a Injection-Locked Frequency Divider based on Heterostructures to Increase Density of Their Elements. Influence of Mismatch-Induced Stress and Porosity of Materials on Technological Process

2021 ◽  
Vol 23 (2) ◽  
pp. 111-163
Author(s):  
E. L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Frequency Divider ◽  
Radiation Defects ◽  
Induced Stress ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework a injection-locked frequency divider. Framework the approach, we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

On increasing of density of transistors in a hybrid cascaded multilevel inverter

2017 ◽  
Vol 13 (4) ◽  
pp. 664-677
Author(s):  
Evgeny L. Pankratov ◽  
Elena A. Bulaeva
Keyword(s):  
Ion Implantation ◽  
Epitaxial Layer ◽  
Design Methodology ◽  
Analytical Approach ◽  
Bipolar Transistors ◽  
Multilevel Inverter ◽  
Radiation Defects ◽  
Content Type ◽  
Cascaded Multilevel Inverter ◽  
Model Diffusion

Purpose The purpose of this paper is to analytically model redistribution of dopant in a heterostructure during annealing of dopant and/or radiation defects (during the modeling, the authors consider two types of infusing of the dopant: dopant diffusion and ion implantation). The authors consider a heterostructure, which consists of a substrate and an epitaxial layer. After that the authors consider doping of several specific areas to manufacture heterodiodes and heterobipolar transistors framework hybrid cascaded multilevel inverter. Design/methodology/approach Based on the modeling, the authors introduce an approach to increase density of diodes and bipolar transistors framework hybrid cascaded multilevel inverter, which has been manufactured based on the heterostructure. The approach is based on using inhomogeneity of the heterostructure and optimization of annealing of dopant and/or radiation defects. Findings The approach gives us possibility to take into account nonlinearity of considered processes. Originality/value The authors introduce an analytical approach to model diffusion and ion types of doping with account concurrent changing of parameters in space and time.

ON APPROACH TO INCREASE INTEGRATION RATE OF ELEMENTS OF A INJECTION LOCKED OSCILLATOR

2020 ◽  
Vol 4 (2) ◽  
pp. 43-50
Author(s):  
E.L. Pankratov
Keyword(s):  
Ion Implantation ◽  
Mass Transport ◽  
Epitaxial Layer ◽  
Field Effect ◽  
Analytical Approach ◽  
Radiation Defects ◽  
Dopant Diffusion ◽  
Time And Space ◽  
Varying Parameters ◽  
Specific Configuration

We analyzed possibility to increase density of field-effect heterotransistors framework an injection locked oscillator. We obtain, that to increase the density of the considered transistors one shall manufacture them in a heterostructure with specific configuration (substrate and epitaxial layer with sections, which were manufactured by using other materials). These sections should be doped by using ion implantation or dopant diffusion. After the doping optimized annealing of dopant and/or radiation defects should done. To formulate recommendations for the optimization we model mass transport (with account nonlinearity) with time and space varying parameters. To make the modelling we introduce an analytical approach. The approach gives a possibility to make the above modelling without crosslinking of solution on interfaces of the heterostructure.

scholarly journals On Prognosis of Manufacturing of an Enhanced Swing Differential Colpitts Oscillator Based on Heterostructures to Increase Density of Their Elements: Influence of Mismatch-Induced Stress

2020 ◽  
Vol 21 (1) ◽  
pp. 23-69
Author(s):  
E. L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Radiation Defects ◽  
Colpitts Oscillator ◽  
Induced Stress ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

scholarly journals An Approach to Decrease Dimensions of Field-Effect Hetero-Transistors in an Injection-Locked Frequency Divider with Account Miss Match Induced Stress and Porosity of Materials to Increase Their Density

2021 ◽  
Vol 1 (1) ◽  
pp. 10-31
Author(s):  
Evgeny L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Frequency Divider ◽  
Radiation Defects ◽  
Induced Stress ◽  
Specific Configuration

In this paper we introduce an approach to increase density of field-effect transistors framework an injection-locked frequency divider. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

A Model to Explain the Variations of “End-of-Range” Defect Densities with Ion Implantation Parameters

1992 ◽  
Vol 279 ◽  
Author(s):  
L. Laanab ◽  
C. Bergaud ◽  
M. M. Faye ◽  
J. Faure ◽  
A. Martinez ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Computer Simulations ◽  
Point Defects ◽  
Numerical Optimization ◽  
Experimental Investigations ◽  
Shallow Junctions ◽  
Quantitative Explanation ◽  
Defect Densities

ABSTRACTComputer simulations in conjunction with TEM experiments have been used to test the different models usually adopted in the literature to explain the formation of “End Of Range”(EOR) defects which appear after annealing of preamorphized silicon layers. Only one survives careful experimental investigations involving Si+, Ge+, Sn+ amorphization at RT and LNT. The “excess-interstitial” model appears relevant at least for a semi-quantitative explanation of the source of point-defects which after recombination and agglomeration, lead to the formation of these defects. This model may be used for the numerical optimization of conditions for the production of high performances ullra-shallow junctions.

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