Structural and electrical properties of lithium cobalt nanoferrites prepared by sol–gel method

2015 ◽  
Vol 29 (01) ◽  
pp. 1450255
Author(s):  
Victory Maisnam ◽  
Mamata Maisnam ◽  
Sumitra Phanjoubam

Lithium cobalt nanoferrites having the compositional formula Li 0.5-x/2 Co x Fe 2.5-x/2 O 4 with x varying from 0.00 to 0.12 in steps of 0.03 were prepared by the chemical sol–gel method. Samples were heated at two different temperatures namely 300°C and 500°C for 4 h. Structural characterization of the samples was done using X-ray diffraction (XRD) technique and confirmed the formation of single phase with spinel structure in all the samples. From the XRD data, the lattice parameter was calculated and found to range from 82.87–83.35 nm while the crystallite size was found to be in the range 17–34 nm. Microstructural studies were carried out using the Scanning Electron Microscopy and revealed the microstructures with grain size ranging from 35–70 nm. Electrical properties like dielectric constant, dielectric loss and AC conductivity for these nanoferrites were investigated. The frequency variation of room temperature dielectric constant, dielectric loss and AC conductivity were studied in the frequency range 100 Hz–1 MHz, and a dispersive behavior was observed, which has been attributed to the Maxwell–Wagner type of interfacial polarization.

2012 ◽  
Vol 512-515 ◽  
pp. 1249-1252 ◽  
Author(s):  
Xu Xue ◽  
Guo Qiang Tan ◽  
Hui Jun Ren ◽  
Meng Cheng

BiFeO3 thin films co-doping Nd and Co were prepared on FTO/glass substrate by sol-gel method with Bi(NO3)3•5H2O, Fe•(NO3)3•9H2O, Nd(NO3)3•6H2O and Co(NO3)2•6H2O as raw materials, 2-methoxyethanol together with acetic anhydride as a solvent. XRD, FE-SEM, Agilent E4980A Precision LCR Meter and TF 2000 Ferroelectric Analyzer were used to characterize the structure, morphology, dielectric property and ferroelectric property of the BiFeO3 thin films. The results show that after Nd and Co co-doping, the BiFeO3 thin films still keep the perovskite structure. The crystal structure turns square or orthogonal from rhombus. The thickness of the BiFeO3 thin films is about 500nm and the grain size is 80nm to 30nm. BiFeO3 thin films co-doping Nd and Co have the larger dielectric constant and the lower dielectric loss compared with Nd doping. BiFeO3 thin films co-doping Nd10% and Co1% have the dielectric constant of over 170 and the dielectric loss of below 0.03. Both have the better frequency stability. Co-doping Nd and Co could decrease the coercive electric field of BiFeO3 thin films.


2011 ◽  
Vol 399-401 ◽  
pp. 958-962
Author(s):  
Xiao Hua Sun ◽  
Shuang Hou ◽  
Xiu Leng Li ◽  
Tian You Peng ◽  
Xing Zhong Zhao

Fe-doped Pb0.3Sr0.7TiO3 (PST) thin films have been fabricated on Pt/Ti/SiO2/Si substrates with sol–gel method. The structure and surface morphology of Fe-doped PST thin films were investigated as a function of Fe concentration by x-ray diffraction (XRD) and atomic force microscopy (AFM). The dielectric measurements were conducted on metal-insulator-metal capacitors at the frequency from 100 Hz to 1M Hz at room temperature. It’s found that the dielectric constant, dielectric loss and tunability of Fe-doped PST films decreased with the increase of Fe content. The effects of Fe doping on the microstructure, dielectric and tunable properties of thin films were analyzed. Though the undoped PST thin film exhibited the highest dielectric constant of 2011 and the largest tunability of 76%, the 6 mol% Fe doped PST thin films had the highest figure of merit (FOM) of 17.9 for its lowest dielectric loss.


2018 ◽  
Vol 12 (1) ◽  
pp. 36-44 ◽  
Author(s):  
Abbas Sadeghzadeh-Attar ◽  
Saeid Hajijafari-Bidgoli ◽  
Mohammad Bafandeh

Bismuth silicate (Bi4Si3O12, BSO) nanostructured films containing 0,1,2, and 3mol% Sr were prepared via sol-gel method and annealed at different temperatures up to 700?C. The effects of Sr content on the structure and morphology of prepared films were investigated. SEM images showed that surfaces of the prepared films were dense, smooth and homogeneous. The average particle size was changed from 30 to 35 nm as the annealing temperature was increased from 500 to 700?C. Variation of the dielectric constant and dielectric loss as a function of frequency and annealing temperature for the synthesized thin films with different content of Sr were also studied. The dielectric constant and dielectric loss decrease with Sr addition, and reach the minimum for the sample containing 2mol% Sr. These changes could be attributed to the crystal structure and formation of secondary phases.


Doklady BGUIR ◽  
2020 ◽  
pp. 74-80
Author(s):  
P. A. Kholov ◽  
N. V. Gaponenko ◽  
K. V. Shaidakova ◽  
V. I. Krymski ◽  
V. A. Filipenya ◽  
...  

The objective of the work is investigation the dielectric permittivity and dielectric loss tangent of BaTiO3 films in a capacitor structure formed by sol – gel method on a Si/TiOx/Pt substrate. The basis of this capacitor is a four-layer film of barium titanate xerogel with a thickness of about 200 nm. The film was synthesized by sol-gel method at a final annealing temperature 750 °C. The problems related to the development of method of forming multilayer capacitor structures, the analysis of the morphology and phase composition of BaTiO3 film, and also the measurement of the capacitance-voltage characteristics in the frequency range 10 kHz – 2 MHz have been solved. Morphology of the films was analyzed using a Hitachi S-4800 scanning electron microscope. X-ray diffraction spectra was recorded using a DRON-3 automated diffractometer, using monochromatic CuKα radiation. Capacitance-voltage characteristics were obtained using a B1500A semiconductor analyzer. Dielectric constant and dielectric loss tangent, calculated for capacitance measurements, are changed as follows: for a bias voltage of U = 0 V, the change in ε is 232–214, and tanδ 0.022–0.16, and for a bias voltage of U = 10 V, ε occurs in the range 135–124 and tanδ from 0.02 to 0.1. The obtained frequency dependences of the dielectric constant of BaTiO3 films show a decrease in the dielectric constant in the range of 10 kHz – 2 MHz. It was found that, with a BaTiO3 film thickness of less than 100 nm, a thin-film capacitor with a lower platinum electrode is not always formed, which is probably caused by shunting of the structure.


2015 ◽  
Vol 740 ◽  
pp. 3-6
Author(s):  
Guo Yuan Cheng ◽  
Xing Hua Fu ◽  
Xin Jin ◽  
Wen Hong Tao ◽  
Yu Qin Qiang

KNN-BF piezoelectric ceramics synthesized by sol-gel method in this experiment. By controlling bismuth and iron content in the system to study effects of them. We selected citric acid as metal chelator and ethylene glycol as esterification agent. PH maintained 5-6 during preparation of the sol. Sintering temperature of ceramic selected 1100°C. Preparation ceramics under these conditions and comparative analysis, the structure of ceramics is single perovskite and shap of crystals are square block. With the increase of x, properties of ceramics firstly increases and then decreases: d33, εr, Qm, Kpreaching the maximum, values of them were 136pC/N, 630(f =1KHz), 212, 0.41 respectively; dielectric loss to minimum is 0.07(f =1KHz); at this point, ceramics had best performance.


2015 ◽  
Vol 76 (1) ◽  
pp. 220-226 ◽  
Author(s):  
Dongfang Chen ◽  
Shengli Huang ◽  
Jianguo Chen ◽  
Jinrong Cheng

2018 ◽  
Vol 29 (8) ◽  
pp. 6879-6891 ◽  
Author(s):  
Sobhi Hcini ◽  
Aref Omri ◽  
Michel Boudard ◽  
Mohamed Lamjed Bouazizi ◽  
Abdessalem Dhahri ◽  
...  

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