MWCNTs patterning by thermally enhanced and confined evaporation for transparent and conductive thin film

2018 ◽  
Vol 32 (29) ◽  
pp. 1850360 ◽  
Author(s):  
Xiangmeng Li ◽  
Jinyou Shao ◽  
Xijing Zhu ◽  
Huifen Wei
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Self Assembly ◽  
Mechanical Performance ◽  
Flexible Substrate ◽  
Adhesive Tape ◽  
Large Area ◽  
Multi Walled Carbon Nanotubes ◽  
Geometric Confinement ◽  
Walled Carbon Nanotubes

Conductive and transparent thin film structures are useful in flexible electronics. In this paper, we report multi-walled carbon nanotubes (MWCNTs) patterning into gradient regular patterns with large area of about several square centimeters on silicon or wafer glass slide via thermally enhanced evaporative self-assembly under wedge-shaped geometric confinement. The morphologies, electrical and optical properties of the MWCNTs thin film were characterized. The findings reveal that the conductance would increase with depositing times, meanwhile the transparency would decrease. The resistance of the grid patterning films of MWCNTs has a nearly linear relation to the transmittance in a relatively large range. The MWCNTs can be easily transferred to flexible substrate such as PET films or an adhesive tape. In comparison, SWCNTs could hardly be deposited into stripes or grid patterns, but the continuous thick films and discontinuous thin films could demonstrate better electrical and mechanical performance.

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

Growth control of single and multi-walled carbon nanotubes by thin film catalyst

2002 ◽  
Vol 366 (1-2) ◽  
pp. 109-114 ◽  
Author(s):  
Young Joon Yoon ◽  
Jun Cheol Bae ◽  
Hong Koo Baik ◽  
SeongJin Cho ◽  
Se-Jong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Growth Control ◽  
Thin Film Catalyst ◽  
Multi Walled Carbon Nanotubes ◽  
Walled Carbon Nanotubes

Bioactive poly(etheretherketone) composite containing calcium polyphosphate and multi-walled carbon nanotubes for bone repair: Mechanical property and in vitro biocompatibility

2018 ◽  
Vol 33 (5) ◽  
pp. 543-557 ◽  
Author(s):  
Jianfei Cao ◽  
Yue Lu ◽  
Hechun Chen ◽  
Lifang Zhang ◽  
Chengdong Xiong
Keyword(s):  
Mechanical Property ◽  
Carbon Nanotubes ◽  
Bone Repair ◽  
Mechanical Performance ◽  
Injection Molding Process ◽  
Molding Process ◽  
Calcium Polyphosphate ◽  
Multi Walled Carbon Nanotubes ◽  
Walled Carbon Nanotubes

Poly(etheretherketone) exhibits good biocompatibility, excellent mechanical properties, and bone-like stiffness. However, the natural bio-inertness of pure poly(etheretherketone) hinders its applications in biomedical field, especially when direct bone-implant osteo-integration is desired. For developing an alternative biomaterial for load-bearing orthopedic application, combination of bioactive fillers with poly(etheretherketone) matrix is a feasible approach. In this study, a bioactive multi-walled carbon nanotubes/calcium polyphosphate/poly(etheretherketone) composite was prepared through a compounding and injection-molding process for the first time. Bioactive calcium polyphosphate was added to polymer matrix to enhance the bioactivity of the composite, and incorporation of multi-walled carbon nanotubes to composite was aimed to improve both the mechanical property and biocompatibility. Furthermore, the microstructures, surface hydrophilicity, and mechanical property of multi-walled carbon nanotubes/calcium polyphosphate/poly(etheretherketone) composite, as well as the cellular responses of MC3T3-E1 osteoblast cells to this material were investigated. The mechanical testing revealed that mechanical performance of the resulting ternary composite was significantly enhanced by adding the multi-walled carbon nanotubes and the mechanical values obtained were close to or higher than those of human cortical bone. More importantly, cell culture tests showed that initial cell adhesion, cell viability, and osteogenic differentiation of MC3T3-E1 cells were significantly promoted on the multi-walled carbon nanotubes/calcium polyphosphate/poly(etheretherketone) composite. Accordingly, the multi-walled carbon nanotubes/calcium polyphosphate/poly(etheretherketone) composite may be used as a promising bone repair material in dental and orthopedic applications.

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

Abstract Power devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (>1000°C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer1, thereby preventing their applications to compact devices2, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon3). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (<1×10-4 Ωcm2) and high breakdown voltage VBD (~100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

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