Sensing mechanism analysis on one-dimensional photonic crystal with air slot-porous silicon-air slot F–P cavity

2019 ◽  
Vol 33 (13) ◽  
pp. 1950159 ◽  
Author(s):  
Ying Chen ◽  
Xinbei Gao ◽  
Pei Luo ◽  
Yangmei Xu ◽  
Jinggang Cao ◽  
...  
Keyword(s):  
Refractive Index ◽  
Photonic Crystal ◽  
Porous Silicon ◽  
Structural Parameters ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Resonant Peak ◽  
Mechanism Analysis ◽  
Q Value ◽  
Quality Factor Q

Based on the evanescent wave resonance, a photonic crystal sensing structure with air slot-porous silicon-air slot Fabry–Perot cavity (F–P cavity) is proposed. Taking the F–P cavity as the sensing unit, when the gas to be detected is filled into the sensing unit, the refractive index of the air slot will be changed and the refractive index of the porous silicon layer will also be varied, both of which will shift the resonant peak and greatly increase the sensitivity of the sensor. By adjusting the structural parameters, the quality factor (Q value) can be optimized. A model for the relationship between the resonant wavelength and the refractive index of the detected organic gas was established, and the refractive index sensing performance was analyzed. The results show that the Q value of the structure can attain to 12312.2 and the sensitivity is about 8661.708 nm/RIU, which can provide effective theoretical reference and technical guidance for organic gas detection with low concentration.

Investigation of Effect of Chemical Etching and Temperature on Optical Properties of Porous Silicon Layer

2011 ◽  
Vol 311-313 ◽  
pp. 1773-1778
Author(s):  
Yong Fu Long ◽  
Chun Mei Yao ◽  
Li Yun Lei ◽  
Wei Wen Hu ◽  
Bin Fang Cao ◽  
...  
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Porous Silicon ◽  
Optical Thickness ◽  
Chemical Etching ◽  
Etching Rate ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Etching Time ◽  
Photoluminescence Spectra

The paper investigated the effect of chemical etching and temperature on the optical properties and microstructures of porous silicon layer fabricated by the pulse electrochemically etching by means of the reflectance spectroscopy and photoluminescence spectroscopy. The relationship between the optical thickness (nd) and refractive index n of porous silicon layer and the chemical etching time and temperature has been detailedly studied. With increasing the chemical etching times, the reflectance spectra exhibit the more intense interference oscillations, which mean the uniformity and interface smoothness of porous silicon layers become better, meanwhile, results in decreasing the optical thickness and refractive index, indicating a higher porosity. Moreover, the intensity of photoluminescence spectra increases, and the envelope curves of photoluminescence spectra exhibit a trend of red-shift, which implied the average diameter of silicon nanocrystallite became larger. The chemical etching rate of the optical thickness intensely increases with the chemical etching temperature.

Effect of the Porous Silicon Layer Structure on Gas Adsorption

2020 ◽  
Vol 12 (4) ◽  
pp. 04020-1-04020-5
Author(s):  
A. P. Oksanich ◽  
◽  
S. E. Pritchin ◽  
M. A. Mashchenko ◽  
A. Yu. Bobryshev ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Gas Adsorption ◽  
Layer Structure ◽  
Silicon Layer ◽  
Porous Silicon Layer

scholarly journals Morphology and FT IR spectra of porous silicon

2017 ◽  
Vol 68 (7) ◽  
pp. 53-57 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Jan Gregus ◽  
Emil Pincik
Keyword(s):  
Porous Silicon ◽  
Ir Spectra ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Formation ◽  
Porous Si ◽  
Ft Ir ◽  
P Type ◽  
Type Sample ◽  
Ftir Investigation

AbstractThe morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiOxHycomplexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiOxHyand SiFxHycomplexes in the layer.

Structure and characteristic of porous silicon layer

1994 ◽  
Author(s):  
Guang-Pu Wei ◽  
Jingwei Feng ◽  
Yiming Zheng ◽  
Yu Li
Keyword(s):  
Porous Silicon ◽  
Silicon Layer ◽  
Porous Silicon Layer
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