Study of Mn–Co–Ni–O thin films incorporated with Cu and Cu/Sc elements and properties of the detectors

2021 ◽  
pp. 2150227
Author(s):  
Fei Zhang ◽  
Wei Zhou ◽  
Zhiming Huang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Boundary ◽  
Boundary Energy ◽  
Decisive Role ◽  
Grain Boundary Energy ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Voltage Responsivity ◽  
The Stability

Thin films [Formula: see text] (MCNO), [Formula: see text] (MCNCuO) and [Formula: see text] (MCNCuScO) are prepared by Chemical Solution Deposition method. The results show that the addition of Cu and Cu/Sc elements can reduce the grain boundary energy and the grain boundary angle to improve the single crystal degree of MCNO thin film. Through the analysis of MCNCuScO thin film, it is found that the stability of spinel structure mainly depends on the octahedron rather than tetrahedron. The bandgap of the samples from small to large is separately MCNCuScO, MCNCuO and MCNO films. The absorptivity within the waveband of [Formula: see text] plays a decisive role in the performance of the detector. At the same frequency, the MCNCuO thin film detector has the highest voltage responsivity, followed by the MCNCuScO thin film detector, while the MCNO film detector has the lowest responsivity.

The Effect of Variability Among Grain Boundary Energies on Grain Growth in Thin Film Strips

1994 ◽  
Vol 338 ◽  
Author(s):  
H.J. Frost ◽  
Y. Hayashi ◽  
C.V. Thompson ◽  
D.T. Walton
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Grain Growth ◽  
Boundary Energy ◽  
Strip Width ◽  
Grain Boundary Energy ◽  
Triple Junctions ◽  
Interconnect Reliability ◽  
Bamboo Structure ◽  
Grain Boundary Pinning

ABSTRACTGrain growth in thin-film strips is important to interconnect reliability because grain boundary structures strongly effect the rate and mechanism of electromigration-induced failure. Previous simulations of this process have indicated that the transformation to the fully bamboo structure proceeds at a rate which decreases exponentially with time, and which is inversely proportional to the square of the strip width. We have also reported that grain boundary pinning due to surface grooving implies that there exists a maximum strip width to thickness ratio beyond which the transformation to the bamboo structure does not proceed to completion. In this work we have extended our simulation of grain growth in thin films and thin film strips to consider the effects of variations in grain boundary energy. Boundary energy is taken to depend on the misorientation between the two neighboring grain and the resulting variations in grain boundary energy mean that dihedral angles at triple junctions deviate from 120°. The proportionality between boundary velocities and local curvatures, and the critical curvature for boundary pinning due to surface grooving also both depend on boundary energy. In the case of thin-film strips, the effect of boundary energy variability is to impede the transformation to the bamboo structure, and reduce the width above which the complete bamboo structure is never reached. Those boundaries which do remain upon stagnation tend to be of low energy (low misorientation angle) and are therefore probably of low diffusivity, so that their impact on reliability is probably reduced.

INFLUENCE OF Mg-DOPING ON SYNTHESIS OF SOL–GEL DERIVED BST THIN FILMS

2012 ◽  
Vol 02 (01) ◽  
pp. 1250010 ◽  
Author(s):  
DIONIZY CZEKAJ ◽  
AGATA LISIŃSKA-CZEKAJ
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Stainless Steel ◽  
Sol Gel ◽  
Thin Film Deposition ◽  
Phase Shifters ◽  
Film Deposition ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Steel Substrates

Solid solutions of Ba 1-x Sr x TiO 3 (BST) type are very attractive for application in information technology, but also in microwaves for such electrically controlled devices as phase shifters, tunable filters, steerable antennas, varactors, etc. In the present study thin films of a BST solid solution with x = 0.4 (BST60/40) were prepared by the sol–gel-type chemical solution deposition method. The influence of y = 1, 3 and 5 mol.% MgO doping on synthesis of BST60/40 thin films was studied. Thermal analysis both differential and thermogravimetric were used to determine the thermochemical properties of dried BST60/40– MgO gel powders. A multilayer spin-coating approach was utilized for the Ba0.6Sr0.4TiO3–MgO thin film deposition on stainless steel substrates. X-ray diffraction analysis, SEM and EDS were utilized for thin film characterization in terms of its crystalline structure, microstructure and chemical composition. Raman spectroscopy investigation of MgO -doped Ba0.6Sr0.4TiO3 thin films grown on stainless steel substrates were also performed within the wavenumber range k = 40–1070 cm-1.

Evidence for a Grain Boundary Grooving Model of Agglomeration in Polycrystalline Tisi2 Thin Films

1990 ◽  
Vol 202 ◽  
Author(s):  
Thomas Nolan ◽  
Robert Beyers ◽  
Robert Sinclair
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Grain Boundary ◽  
Cross Section ◽  
Boundary Energy ◽  
Film Surface ◽  
Grain Boundary Energy ◽  
Surface And Interface ◽  
Si Substrates ◽  
Polycrystalline Thin Films

ABSTRACTAn equilibrium model for agglomeration based upon the mechanism of grain boundary grooving in polycrystalline thin films is suggested. It involves an energy balance between surface, interface, and grain boundary energies, and predicts parameters which will influence the onset of agglomeration. It has been determined that small grain size, low grain boundary energy, high film surface and interface energies, and growth of single crystal epitaxial layers should promote resistance to agglomeration. Polycrystalline TiSi2 thin films deposited on Si substrates have been observed using cross-section TEM. The micrographs provide evidence that, for these films, the grain boundary grooving mechanism is dominant and most of the modeling assumptions are valid.

Epitaxial growth of PbZr0.5Ti0.5O3 thin films on SrRuO3/SrTiO3 substrates using chemical solution deposition: Microstructural and ferroelectric properties

2001 ◽  
Vol 16 (6) ◽  
pp. 1739-1744 ◽  
Author(s):  
J. H. Kim ◽  
Youngman Kim ◽  
A. T. Chien ◽  
F. F. Lange
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Solution Deposition ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method ◽  
Pzt Thin Film ◽  
Film Substrate

Epitaxial PbZr0.5Ti0.5O3 (PZT) thin films were grown on top of a SrRuO3 epitaxial electrode layer on a (100) SrTiO3 substrate by the chemical solution deposition method at various temperatures. The microstructure of the PZT thin films was investigated by x-ray diffraction and transmission electron microscopy, and the ferroelectric properties were measured using the Ag/PZT/SRO capacitor structure. In the PZT thin film annealed at low temperature (450 °C/1h), both the perovskite PZT phase at the film/substrate interface and the fluorite PZT phase in the upper region of the film were obtained. It exhibited nonferroelectric properties. The PZT thin film annealed at temperature as low as 525 °C had only a perovskite tetragonal phase and the epitaxial orientational relationship of (001)[010]PZT∥(001)[010]SRO∥(001)[010]STOwith the substrate, and shows a ferroelectric property. The remnant (Pr) and saturation polarization (Ps) density of the sample annealed at 600 °C/1h were measured to be Pr ˜ 51.4 μC/cm2 and Ps ˜ 62.1 μC/cm2 at 5 V, respectively. The net switched polarization dropped only to 98% of its initial value after 7 × 108 fatigue cycles.

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

Nanoscale ◽  
2017 ◽  
Vol 9 (28) ◽  
pp. 9973-9986 ◽  
Author(s):  
Min Hyuk Park ◽  
Young Hwan Lee ◽  
Han Joon Kim ◽  
Tony Schenk ◽  
Woongkyu Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Grain Boundary ◽  
Boundary Energy ◽  
Energy Model ◽  
Grain Boundary Energy ◽  
Crystalline Phases ◽  
Thermodynamic Surface

The crystalline phases in hafnia-zirconia solid solution thin films are comprehensively studied by a comparison with the thermodynamic surface or interface/grain boundary energy model.

LOW-TEMPERATURE GROWTH AND ELECTRIC PROPERTIES OF K0.5Na0.5Nbo3 THIN FILMS BY MICROWAVE IRRADIATION

2018 ◽  
Vol 25 (07) ◽  
pp. 1950014
Author(s):  
N. LI
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Microwave Irradiation ◽  
Electric Properties ◽  
Solution Deposition ◽  
Temperature Growth ◽  
Si Substrates ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Low Leakage Current

K0.5Na0.5Nbo3 wet films were spin-coated on Pt/Ti/SiO2/Si substrates by chemical solution deposition method. The microwave irradiation was introduced as the annealing method. The microstructure and electric properties of KNN thin films were tested and analyzed. It was found that the KNN thin film can be well crystallized by microwave irradiation at the temperature as low as 425∘C. The KNN thin film annealed at 425∘C gains the uniform microstructure, grain refinement, better electric properties and low leakage current density.

Grain Growth in Thin Films With Variable Grain Boundary Energy

1993 ◽  
Vol 317 ◽  
Author(s):  
H.J. Frost ◽  
Y. Hayashi ◽  
C.V. Thompson ◽  
D.T. Walton
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Grain Growth ◽  
Boundary Energy ◽  
High Energy ◽  
Grain Boundary Energy ◽  
Triple Junctions ◽  
Variable Boundary ◽  
Von Neumann ◽  
Grain Size Distributions

ABSTRACTIn simulations of grain growth in thin films we have considered the effect of variations in grain boundary energy. Boundary energy depends on both the misorientation between the two neighboring grains, and the angles which the boundary plane makes with the crystallographic axes of the two crystals. Variations in grain boundary energy mean that dihedral angles at triple junctions deviate from 120°. The proportionality between boundary velocities and local curvatures, and the critical curvature for boundary pinning due to surface grooving also both depend on boundary energy. One effect of variable boundary energies is that grains no longer gain or lose area at rates determined solely by their topology or number of sides. (They no longer obey the Von Neumann/Mullins law). Another effect is that as the grain structures evolve, the fraction of high-energy boundaries decreases. Also, the stagnant structures have broader grain size distributions.

Grain boundary energy in /φ Pure Ice Bicrystals Samples

2021 ◽  
pp. 111094
Author(s):  
C.L. Di Prinzio ◽  
D. Stoler ◽  
Aguirre Varela ◽  
E. Druetta
Keyword(s):  
Grain Boundary ◽  
Boundary Energy ◽  
Grain Boundary Energy
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