THIN ZIRCONIUM DIOXIDE AND YTTRIUM OXIDE-STABILIZED ZIRCONIUM DIOXIDE FILMS PREPARED BY PLASMA-CVD

1990 ◽  
Vol 04 (19) ◽  
pp. 1215-1225 ◽  
Author(s):  
H. WENDEL ◽  
H. HOLZSCHUH ◽  
H. SUHR ◽  
G. ERKER ◽  
S. DEHNICKE ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Partial Pressure ◽  
Power Density ◽  
Yttrium Oxide ◽  
Zirconium Dioxide ◽  
Organometallic Compounds ◽  
Metal Alkoxides ◽  
Plasma Cvd ◽  
Stabilized Zirconium Dioxide

Thin zirconia (zirconium dioxide) films are deposited by PECVD using as precursors organometallic compounds, metal alkoxides, and metal β-diketonates. The properties of the films depend on the substrate temperature, power density and the nature and partial pressure of the precursor. Thin films of zirconia stabilized with yttria (yttrium oxide) are formed at relatively low deposition temperatures (500°C) using the β-diketones of zirconium and yttrium.

Highly conductive AZO thin films obtained by rationally optimizing substrate temperature and oxygen partial pressure

2017 ◽  
Vol 644 (1) ◽  
pp. 190-196 ◽  
Author(s):  
Yong Zeng ◽  
Zhiqiang Fang ◽  
Honglong Ning ◽  
Feng Zhu ◽  
Xianzhe Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure

Electrical Properties and Microstructures of Ultraviolet Transparent Ga2O3 Thin Films

2007 ◽  
Vol 561-565 ◽  
pp. 1233-1236
Author(s):  
Yasuhiro Shigetoshi ◽  
Susumu Tsukimoto ◽  
Hidehisa Takeda ◽  
Kazuhiro Ito ◽  
Masanori Murakami
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Optical Properties ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Partial Pressure Of Oxygen ◽  
Electrical And Optical Properties ◽  
Sputtering Deposition

The electrical and optical properties, and microstructures of 100 nm-thick Ga2O3 films fabricated on Al2O3(0001) substrates by a sputtering deposition were investigated. The partial pressure of oxygen was controlled and the substrate temperature was kept to be 500 °C during deposition. With increasing the oxygen partial pressure, the structures of the Ga2O3 films deposited on the substrates were observed to change from amorphous to crystalline (monoclinic β-type Ga2O3). The transmittance of the Ga2O3 films was measured to be more than 80 % at the visible and ultraviolet regions although the electrical resistivity was high. In order to obtain both low electrical resistivity and high transmittance at the ultraviolet regions, the addition of active dopant elements such as Sn into the Ga2O3 films would be required.

Stabilization of isopropanol dispersions of nanosized powders of yttrium oxide-stabilized zirconium dioxide

2011 ◽  
Vol 73 (1) ◽  
pp. 97-103 ◽  
Author(s):  
I. S. Puzyrev ◽  
A. S. Lipilin ◽  
V. V. Ivanov ◽  
Yu. G. Yatluk
Keyword(s):  
Yttrium Oxide ◽  
Zirconium Dioxide ◽  
Nanosized Powders ◽  
Stabilized Zirconium Dioxide

Preparation of BaRuO3 and BaIrO3 Films by Laser Ablation

2007 ◽  
Vol 336-338 ◽  
pp. 730-734 ◽  
Author(s):  
Hiroshi Masumoto ◽  
Akihiko Ito ◽  
Y. Kaneko ◽  
Takashi Goto
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Laser Ablation ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Preparation Conditions ◽  
Structure Morphology ◽  
Metallic Conduction

BaRuO3(BRO) and BaIrO3(BIO) thin films were prepared by laser ablation, and the effects of preparation conditions on the structure, morphology and electrical conductivity were investigated. BRO thin films deposited at oxygen partial pressure (PO2) = 13 Pa and substrate temperature (Tsub) < 573 K were amorphous. At Tsub = 573 K, the rhombohedral BRO thin films with (110) orientation were obtained. BRO thin films prepared at Tsub = 773 K and PO2= 13 Pa exhibited the resistivity of 5x10-6 m and showed metallic conduction. BIO thin films deposited at PO2= 40 Pa and Tsub < 623 K were amorphous. Tsub > 623 K, the BIO thin films crystallized into a 6H structure were obtained. The resistivity of the BIO films at PO2= 40 Pa decreased from 1.4x10-2 to 4x10-4 m with decreasing Tsub from 1073 to 573 K.

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