EFFECT OF γ RADIATION ON SOME PHYSICAL PROPERTIES OF THE SPINEL FERRITE SYSTEM Ni0.65Zn0.35CuxFe2−xO4

1994 ◽  
Vol 08 (28) ◽  
pp. 1781-1790 ◽  
Author(s):  
F.S. TERRA
Keyword(s):  
Electrical Resistivity ◽  
Room Temperature ◽  
Spinel Ferrite ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Γ Radiation ◽  
X Ray ◽  
Resistivity Measurements ◽  
Dta Analysis ◽  
Ferrite System

X-ray diffraction analysis, electrical resistivity measurements at room temperature, and differential thermal analysis (DTA) were carried out for γ-irradiated Ni 0.65 Zn 0.35 Cu xFe2−x O 4 spinel ferrite samples. It was found that the lattice parameter decreased, i.e. the theoretical density increased, while the electrical resistivity decreased. From the DTA analysis there is an endothermic peak at 100–130º C due to internal stress created by γ radiations as a result of lattice defects formation.

Evolution of crystal structure of dual layered molecular conductor (ET)4ZnBr4(C6H4Cl2) with temperature

CrystEngComm ◽  
2021 ◽  
Author(s):  
Gennady V. Shilov ◽  
Elena I. Zhilyaeva ◽  
Sergey M. Aldoshin ◽  
Alexandra M Flakina ◽  
Rustem B. Lyubovskii ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electrical Resistivity ◽  
Single Crystal ◽  
Room Temperature ◽  
Organic Conductor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resistivity Measurements ◽  
Molecular Conductor ◽  
Abrupt Changes

Electrical resistivity measurements of a dual layered organic conductor (ET)4ZnBr4(1,2-C6H4Cl2) above room temperature show abrupt changes in resistivity at 320 K. Single-crystal X-ray diffraction studies in the 100-350 K range...

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

STUDY OF THE DEPENDENCE OF HIGH Tc ON VARIOUS SINTERING TEMPERATURES FOR Bi-Pb-Sr-Ca-Cu-O SUPERCONDUCTORS

1991 ◽  
Vol 05 (24n25) ◽  
pp. 1635-1638
Author(s):  
S.M. M.R. NAQVI ◽  
A.A. QIDWAI ◽  
S.M. ZIA-UL-HAQUE ◽  
FIROZ AHMAD ◽  
S.D.H. RIZVI ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Liquid Nitrogen ◽  
X Ray Diffraction ◽  
High Tc ◽  
X Ray ◽  
Resistivity Measurements ◽  
Zero Resistance

Bi1.7-Pb0.3-Sr2-Ca2-Cu3-Ox superconducting samples were prepared at 855°C, 862 C, 870 C, and 882 C sintering temperatures respectively. All samples were sintered for 120 hours. The samples were then quenched in liquid nitrogen. The electrical resistivity measurements showed that the samples sintered at 870° C had the best Tc. For these samples the Tc onset was around 120 K and the zero resistance was obtained at 108 K. X-ray diffraction studies showed that the samples were multiphased.

MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

1999 ◽  
Vol 595 ◽  
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

AbstractWe report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

scholarly journals Physical properties of neodymium tin oxide pyrochlore ceramics

2017 ◽  
Vol 35 (3) ◽  
pp. 534-538 ◽  
Author(s):  
Adli A. Saleh ◽  
A. F. Qasrawi ◽  
G. Yumuşak ◽  
A. Mergen
Keyword(s):  
Electrical Resistivity ◽  
Physical Properties ◽  
Tin Oxide ◽  
Energy Band ◽  
Uv Light ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Light Spectra ◽  
Uv Sensors

AbstractIn this work, physical properties of neodymium tin oxide pyrochlore ceramics prepared by solid state reaction technique are investigated by means of X-ray diffraction, scanning electron microscopy, ultraviolet-visible light (UV-Vis) spectrophotometry and temperature dependent electrical resistivity measurements. The pyrochlore is observed to have a cubic FCC crystal lattice with lattice parameter of 10.578 Å. The planes of the cubic cell are best oriented in the [2 2 2] direction. From the X-ray, the UV-Vis spectrophotometry and the electrical resistivity data analysis, the grain size, strain, dislocation density, optical and thermal energy band gaps, localized energy band tail states and resistivity activation energies are determined and discussed. The pyrochlore is observed to have an optical energy band gap of ~3.40 eV. This value corresponds to 365 nm UV light spectra which nominates the neodymium tin oxide pyrochlore ceramics for the use as UV sensors.

EFFECT OF Ni ON THE ELECTRICAL AND MICROSTRUCTURAL PROPERTIES OF NANOCRYSTALLITES Fe2O3/TiO2 SYSTEM

2006 ◽  
Vol 13 (04) ◽  
pp. 479-484 ◽  
Author(s):  
MAGED S. SOBHY
Keyword(s):  
Electrical Resistivity ◽  
Spinel Ferrite ◽  
Average Crystalline Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Average Value ◽  
Semiconductor Behavior ◽  
Ion Substitution ◽  
Diffraction Patterns ◽  
Increasing Temperature

Nominal compositions of Ni x Ti 1-x Fe 2 O 5-δ (x = 0, 0.2, 0.4, 0.6, 0.8 and 1) were prepared by a solid state reaction using stoichiometric amounts of Fe 2 O 3/ TiO 2 system and NiO as a dopant. The effects of small substitution of Ni ions on the electrical and structural properties were studied for the above system. The X-ray diffraction patterns revealed that the ferroelectric phase of iron titanate and the spinel ferrite phase of Ni -ferrite having a single phase at x = 0 and 1, respectively. The substitution of Ni ions increases the average value of lattice constant aav. Solid–solid interaction took place between the ternary oxides at 1200°C for 4 h yielding a new phase of NiTiO 3. The presence of the three phases was confirmed by X-ray diffraction technique. The resultant compositions have nanocrystallites with average crystalline size "D av " in the range 100–300 nm. The DC electrical resistivity ρ, Curie temperature TC and activation energies for electric conduction around TC region increase as Ni ion substitution increases. The ferrite samples have a semiconductor behavior where electrical resistivity ρ decreases on increasing temperature. The activation energy for electrical conduction was affected by both the ratio "ferroelectric/ferrite" and the position of the Curie temperatures in the compositions depending on the ( Ni , Ti ) to Fe ratio.

Room Temperature Ferromagnetism in Powder Form of Sn1-xCrxO2 (x = 0.01, 0.02, 0.03, 0.04 and 0.05) Solid Solution

2009 ◽  
Vol 1201 ◽  
Author(s):  
Kun Xu ◽  
Mitsuru Izumi ◽  
Osami Yanagisawa ◽  
Tetsuya Ida
Keyword(s):  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Lattice Parameter ◽  
Nominal Composition ◽  
Powder Form ◽  
X Ray Diffraction ◽  
Interstitial Position ◽  
X Ray ◽  
Cr Content ◽  
Structural And Magnetic Properties

AbstractStructural and magnetic properties were investigated in the mixed powders of Sn1-xCrxO2 (x = 0.01, 0.02, 0.03, 0.04 and 0.05) in nominal composition. The lattice parameter observed in (110) x-ray diffraction indicates two step changes with increasing Cr content. The occupation of Cr ion at the interstitial position leads to elongation of the lattice parameter for x = 0.01 to x =0.03. Then, the Cr3+ ions are remarkably substituted into the Sn4+ ion site for x = 0.04 to x = 0.05, which results in shortening of the lattice. The lattice parameters for x = 0.01 and 0.02 are larger than x = 0.03 to 0.05. The room temperature ferromagnetism appeared in the sample with x = 0.01 and reaches maximum at the doping rate of x = 0.02; while the magnetization decreases for x > 0.02 was observed. Present study clearly shows the existence of correlation between appearance of ferromagnetism and the structural change.

Single Crystal Growth and Thermoelectric Properties of Ce5Cu19P12

1998 ◽  
Vol 545 ◽  
Author(s):  
K. J. Proctor ◽  
F. J. DiSalvo
Keyword(s):  
Electrical Resistivity ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystals ◽  
Room Temperature ◽  
Single Crystal Growth ◽  
Room Temperature Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Resistivity

AbstractSingle crystals of the known ternary cerium intermetallic Ce5Cu19P12were grown by Sn flux and I2transport methods. The long axis of the black hexagonal needles was confirmed to be the c-axis by single crystal X-ray diffraction. Electrical resistivity of both single crystals and a pressed pellet was measured from 4 - 300 K; the room temperature resistivity is about 400 μΩ-cm for the needle axis of the crystals and about 5 mΩ-cm for the pressed pellet. The thermopower of the pressed pellet was found to be 34 μV/K at room temperature.

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