X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES OF THE STABILITY OFAl/Mg/PETINTERFACES

2000 ◽  
Vol 07 (03) ◽  
pp. 227-233 ◽  
Author(s):  
M. KONO ◽  
P. C. WONG ◽  
Y. S. LI ◽  
K. A. R. MITCHELL
Keyword(s):  
Photoelectron Spectroscopy ◽  
Alloy Formation ◽  
Interfacial Chemistry ◽  
X Ray ◽  
C Complex ◽  
Pet Film ◽  
The Stability ◽  
Spectroscopy Studies ◽  
Pet System ◽  
Metal Overlayers

The interfacial chemistry of an Al/Mg/PET sample, prepared by thermally evaporating first Mg and then Al on to a polyethyleneterephthalate (PET) film, was studied by X-ray photoelectron spectroscopy (XPS). The Mg/PET system showed two types of Mg species, namely an O–Mg–C complex, from reaction with the carbonyl group on PET, and metal-like clusters. The deposition of Al results in intermetallic mixing, which is manifested by alloy formation and Mg enrichment at the surface. It appears that some Al atoms penetrate the Mg region to react with carbonyl groups in the PET and form an interfacial complex with O–Al–C bonding. The stability of this sample was studied on exposing it to air and then rinsing it with water. The metal overlayers are strongly modified by these treatments, although the bonding at the PET interface appears relatively unchanged.

Stability of Indium Tin Oxide/Polymer Interfaces

2002 ◽  
Vol 747 ◽  
Author(s):  
X. Crispin ◽  
A. Crispin ◽  
M. P. de ◽  
S. Marciniak ◽  
W. Osikowicz ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Oxide Surface ◽  
Polymer Interfaces ◽  
Interfacial Chemistry ◽  
Light Emitting ◽  
X Ray ◽  
The Stability

ABSTRACTInterfacial chemistry at indium tin oxide/polymer interfaces is of fundamental importance for the performance of polymer-based light emitting diodes. X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry are used to investigate the stability of the interface formed between indium tin oxide and (i) the light emitting polymer poly(p-phenylenevinylene), and (ii) the hole injecting layer poly(3,4-ethylenedioxythiophene) polystyrenesulfonate. The formed interfaces are not stable and indium-containing species diffuse from the metal oxide surface into the polymer layers.

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

scholarly journals Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy

2014 ◽  
Vol 2 (6) ◽  
Author(s):  
Lee A. Walsh ◽  
Greg Hughes ◽  
Conan Weiland ◽  
Joseph C. Woicik ◽  
Rinus T. P. Lee ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Alloy Formation ◽  
X Ray ◽  
X Ray Absorption

Use of x-ray photoelectron spectroscopy to investigate the deposition of metal overlayers onto the clean cleaved CdS surface

1990 ◽  
Vol 231 (1-2) ◽  
pp. 98-102 ◽  
Author(s):  
Z. Sobiesierski ◽  
N.M. Forsyth ◽  
I.M. Dharmadasa ◽  
R.H. Williams
Keyword(s):  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Metal Overlayers

X-ray photoelectron spectroscopy studies of laterite standard reference material

2005 ◽  
Vol 228 (1-2) ◽  
pp. 151-162 ◽  
Author(s):  
J. Mendialdua ◽  
R. Casanova ◽  
F. Rueda ◽  
A. Rodríguez ◽  
J. Quiñones ◽  
...  
Keyword(s):  
Reference Material ◽  
Standard Reference Material ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Spectroscopy Studies

scholarly journals Термодинамические свойства оксипентафторида ванадия (IV), (NH-=SUB=-4-=/SUB=-)-=SUB=-3-=/SUB=-VOF-=SUB=-5-=/SUB=-

2020 ◽  
Vol 62 (7) ◽  
pp. 1123
Author(s):  
Е.В. Богданов ◽  
Е.И. Погорельцев ◽  
А.В. Карташев ◽  
М.В. Горев ◽  
М.С. Молокеев ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Photoelectron Spectroscopy ◽  
Single Phase ◽  
Dielectric Studies ◽  
X Ray Diffraction ◽  
X Ray ◽  
Limits Of Stability ◽  
Three Phase ◽  
Temperature Dependences ◽  
Spectroscopy Studies

Abstract The (NH_4)_3VOF_5 crystals have been synthesized and their homogeneity and single-phase structure has been established by the X-ray diffraction, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy studies. The investigations of the temperature dependences of specific heat, entropy, strain, and pressure susceptibility show the occurrence of three phase transitions caused by the structural transformations in the (NH_4)_3VOF_5 crystals. The T – p phase diagram shows the temperature limits of stability of the crystalline phases implemented in (NH_4)_3VOF_5. The optical and dielectric studies disclose the ferroelastic nature of the phase transitions. An analysis of the experimental data together with the data on the isostructural (NH_4)_3VO_2F_4 crystal makes it possible to distinguish the physical properties of oxyfluorides containing vanadium of different valences (IV and V).

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