X-Ray Photoelectron Spectroscopic Study of the Surface Reaction of Uranium–Niobium Alloy with O2

2003 ◽  
Vol 10 (02n03) ◽  
pp. 381-386 ◽  
Author(s):  
Xiaoguo Fu ◽  
Kezhao Liu ◽  
Xiaolin Wang ◽  
Zhengping Zhao ◽  
Yong Yu
Keyword(s):  
Oxide Film ◽  
Photoelectron Spectroscopy ◽  
Surface Reaction ◽  
Film Formation ◽  
Pure Metal ◽  
Niobium Alloy ◽  
Initial Oxidation ◽  
In Situ Oxidation ◽  
X Ray

The initial oxidation of uranium–niobium alloy in oxygen atmosphere at 298 K has been studied by X-ray photoelectron spectroscopy (XPS). For comparison, the adsorption of oxygen on pure metal niobium and uranium has also been studied. The changes of U4f, Nb3d and O1s spectra during in situ oxidation indicate that the adsorption of oxygen on uranium–niobium alloy surfaces first leads to the formation of UO2 and NbO; then NbO2 and Nb2O5 are detected with increasing exposures of oxygen. The segregations of U and Nb to the uranium–niobium alloy surfaces are observed at different oxidation stages. The oxide film formation of uranium–niobium alloy is faster than that of pure uranium at initial oxidation stages.

GROWTH OF OXIDE LAYER ON GERMANIUM (011) SUBSTRATE UNDER DRY AND WET ATMOSPHERES

1999 ◽  
Vol 06 (06) ◽  
pp. 1053-1060 ◽  
Author(s):  
N. TABET ◽  
J. AL-SADAH ◽  
M. SALIM
Keyword(s):  
Simple Model ◽  
Oxide Film ◽  
Growth Kinetics ◽  
Photoelectron Spectroscopy ◽  
Early Stage ◽  
X Ray ◽  
Apparent Thickness ◽  
Different Temperatures ◽  
Kinetics Of

X-ray Photoelectron Spectroscopy (XPS) has been used to investigate the oxidation of (011) Ge substrates. The sample surfaces were CP4-etched, then annealed in situ, at different temperatures, for various durations. Dry and wet atmospheres were used. The oxidation rate during the early stage was increased by the presence of moisture in the atmosphere. A simple model was used to define and determine an apparent thickness of the oxide film from XPS measurements. The time dependence of the apparent thickness is consistent with a partial coverage of the surface by oxide islands. The growth kinetics of the oxide islands obeys a nearly cubic law.

Effect of HCl+LiF Etching Process on Electrochemical Performance of Ti3C2

NANO ◽  
2020 ◽  
Vol 15 (05) ◽  
pp. 2050058
Author(s):  
Yuhua Huang ◽  
Weiwei Li ◽  
Bingchu Mei ◽  
Yu Yang ◽  
Zuodong Liu
Keyword(s):  
Electrochemical Performance ◽  
Photoelectron Spectroscopy ◽  
Lithium Fluoride ◽  
Specific Capacity ◽  
Etching Process ◽  
X Ray Diffraction ◽  
In Situ Oxidation ◽  
X Ray ◽  
Scanning Electron

In this paper, the effects of etching temperature and concentrations of hydrochloric acid (HCl) on the exfoliating process and the electrochemical performance of LIBs were systematically explored. The transformation from Ti3AlC2 to Ti3C2 was analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and Raman spectra. The suitable conditions of preparing Ti3C2 MXene though HCl and lithium fluoride (LiF) were obtained. Besides, the in-situ oxidation conditions of Ti3C2 during the etching process were studied. The TiO2/Ti3C2 was beneficial to improve the specific capacity from 125[Formula: see text]mAh[Formula: see text]g[Formula: see text] to 150[Formula: see text]mAh[Formula: see text]g[Formula: see text] at 1 C.

Initial oxidation of GaAs(100) under near-realistic environments revealed by in situ AP-XPS

2020 ◽  
Vol 56 (94) ◽  
pp. 14905-14908
Author(s):  
Ryo Toyoshima ◽  
Shunya Murakami ◽  
Shinsuke Eguchi ◽  
Kenta Amemiya ◽  
Kazuhiko Mase ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxide Interface ◽  
Initial Oxidation ◽  
X Ray

In situ X-ray photoelectron spectroscopy measurements under O2 ambient reveal that the initial oxidation of the GaAs(100) surface proceeds with a quasi-barrier-less process, concomintantly with forming an As-rich layer at the bulk-oxide interface.

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