PREPARATION AND PHOTOVOLTAIC PROPERTIES OF Ag2O/Si ISOTYPE HETEROJUNCTION

2005 ◽  
Vol 12 (02) ◽  
pp. 299-303 ◽  
Author(s):  
RAID A. ISMAIL ◽  
KHALID Z. YAHYA ◽  
OMAR A. ABDULRAZAQ
Keyword(s):  
Thin Film ◽  
Electrical Resistivity ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
Post Deposition Annealing ◽  
Photovoltaic Properties ◽  
High Electrical Resistivity ◽  
P Type ◽  
Two Peaks ◽  
Post Deposition

Highly (101)-oriented p-Ag 2 O thin film with high electrical resistivity was grown by rapid thermal oxidation (RTO) on clean monocrystalline p-type Si without any post-deposition annealing. From optical transmittance and absorptance data, the direct optical band gap was found to be 1.46 eV. The electrical and photovoltaic properties of Ag 2 O/Si isotype heterojunction were examined in the absence of any buffer layer. Ideality factor of heterojunction was found to be 3.9. Photoresponce result revealed that there are two peaks located at 750 nm and 900 nm.

Effect of deposition pressure and post deposition annealing on SmCo thin film properties

2008 ◽  
Vol 5 (12) ◽  
pp. 3759-3762 ◽  
Author(s):  
Th. Speliotis ◽  
E. Makarona ◽  
F. Chouliaras ◽  
C. A. Charitidis ◽  
C. Tsamis ◽  
...  
Keyword(s):  
Thin Film ◽  
Deposition Pressure ◽  
Post Deposition Annealing ◽  
Film Properties ◽  
Post Deposition

Improvement in Contact Resistivity to thin film Bi2Te3

2010 ◽  
Vol 1267 ◽  
Author(s):  
Rahul P Gupta ◽  
Ka Xiong ◽  
John B White ◽  
Kyeongjae Cho ◽  
Bruce Gnade
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Surface Preparation ◽  
Contact Resistivity ◽  
Post Deposition Annealing ◽  
Contact Metallization ◽  
Potential Contact ◽  
Te Material ◽  
The Impact ◽  
Post Deposition

AbstractA study of the impact of surface preparation and post-deposition annealing on contact resistivity for sputtered Ni and Co contacts to thin film Bi2Te3 is presented. The contact resistance values obtained using the transfer length method (TLM) for Ni is compared to Co as a potential contact metal to Bi2Te3. Post-deposition annealing at 100°C on samples that were sputter cleaned reduces the contact resistivity to < 10-7 Ω-cm2 for both Ni and Co contacts to Bi2Te3. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric (TE) material, making it a suitable candidate for contact metallization to Bi2Te3 based devices.

Thin Film Deposition and Transport in 2223 Bi‐Sr‐Ca‐Cu‐O

1989 ◽  
Vol 169 ◽  
Author(s):  
J.T. Kucera ◽  
D.G. Steel ◽  
D.W. Face ◽  
J.M. Graybeal ◽  
T.P. Orlando ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Annealing Conditions ◽  
Sensitive Function ◽  
Post Deposition

AbstractWe have reproducibly prepared thin films of Bi‐Sr‐Ca‐Cu‐O with Tc ≥ 105K. Depositions were done at ambient temperature with a subsequent post‐deposition anneal, and did not include lead substitution. X‐ray diffraction data indicates a majority fraction of the 2223 phase. These films possess very large grains of the order of 20‐30 u.m in size. Post‐deposition annealing conditions are a sensitive function of composition. Detailed transport measurements as a function of temperature and magnetic field have been obtained.

scholarly journals Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

2017 ◽  
Vol 35 (1) ◽  
pp. 87-93 ◽  
Author(s):  
Fatma Meydanerİ Tezel ◽  
İ. Afşin Kariper
Keyword(s):  
Thin Film ◽  
Surface Tension ◽  
Dielectric Constant ◽  
Bismuth Oxide ◽  
Optical Transmission ◽  
Optical Band Gap ◽  
Unit Area ◽  
Optical Transmittance ◽  
Contact Angles ◽  
Oxide Thin Film

AbstractBismuth oxide thin film was deposited by chemical bath deposition (CBD) technique onto a glass substrate. The grain size (D), dislocation density (δ) and number of crystallites per unit area (N), i.e. structural properties of the thin film were determined as 16 nm, 39.06× 10–4line/nm2, 31.25 × 10–31/nm2, respectively. Optical transmittance properties of the thin film were investigated by using a UV-Vis spectrophotometer. The optical band gap (Eg) for direct transitions, optical transmission (T %), reflectivity (R %), absorption, refractive index (nr), extinction coefficient (k), dielectric constant (∊) of the thin film were found to be 3.77 eV, 25.23 %, 32.25 %, 0.59, 3.62, 0.04 and 2.80, respectively. The thickness of the film was measured by AFM, and was found to be 128 nm. Contact angles of various liquids on the oxide thin film were determined by Zisman method, and surface tension was calculated to be 31.95 mN/m.

scholarly journals Properties of Thin Film-Covered GaN(0001) Surfaces

2020 ◽  
Vol 2 (1) ◽  
pp. 30
Author(s):  
Miłosz Grodzicki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Properties ◽  
Vapour Deposition ◽  
Metal Films ◽  
Physical Vapour Deposition ◽  
Surface Alloying ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Post Deposition

In this paper, the surface properties of bare and film-covered gallium nitride (GaN) of the wurtzite form, (0001) oriented are summarized. Thin films of several elements—manganese, nickel, arsenic and antimony—are formed by the physical vapour deposition method. The results of the bare surfaces as well as the thin film/GaN(0001) phase boundaries presented are characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information about electronic properties of GaN(0001) surfaces are shown. Different behaviours of thin films after post-deposition annealing in ultrahigh vacuum conditions, such as surface alloying, subsurface dissolving and desorbing, are found. The metal films form surface alloys with gallium (NiGa, MnGa), while the semi-metal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate can react with it modifying the surface properties of GaN(0001).

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