PREPARATION AND DETERMINATION OF OPTICAL PROPERTIES OF NiO THIN FILMS DEPOSITED BY DIP COATING TECHNIQUE

2007 ◽  
Vol 14 (02) ◽  
pp. 219-224 ◽  
Author(s):  
F. E. GHODSI ◽  
S. A. KHAYATIYAN
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Visible Range ◽  
X Ray Diffraction ◽  
Coating Technique ◽  
Number Of Layers ◽  
Dip Coating Technique

The NiO thin films were prepared from NiCl 2 · 6 H 2 O precursor by using sol–gel route. The films were deposited on a glass substrate using dip-coating technique. The optical and structural properties of the NiO thin films were investigated with respect to dipping rate, number of layers, and annealing temperature. The microstructure of NiO thin films and powder were examined by X-ray diffraction (XRD). Various diffraction peaks of NiO powder were observed in the XRD pattern. The morphology of the films was studied by using scanning electron microscopy (SEM). The optical characteristics of the samples were determined by using UV–visible spectrophotometer. The results show that the NiO thin films are transparent in the visible range. Optical constants (refractive index, extinction coefficient…) were changed by varying dipping rate, number of layers, and annealing temperature.

EFFECT OF ANNEALING TEMPERATURE ON THE OPTICAL AND STRUCTURAL PROPERTIES OF DIP-COATED Al2O3 THIN FILMS PREPARED BY SOL–GEL ROUTE

2005 ◽  
Vol 12 (05n06) ◽  
pp. 793-797 ◽  
Author(s):  
F. E. GHODSI ◽  
M. MAFAKHERI ◽  
A. NOVINROOZ
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Sol Gel Process ◽  
Dip Coating Technique

Thin films of Al 2 O 3 were prepared by the sol–gel process. Dip-coating technique was used for deposition of the Al 2 O 3 thin films onto glass substrates. Optical and structural properties of the films were investigated with respect to the annealing temperature (100–500°C). The structure of these films was determined by X-ray diffraction (XRD). Scanning electron microscopy (SEM) was performed for the analysis of surface morphology. For determination of the optical constants of Al 2 O 3 thin films, UV-Visible spectrophotometry measurements were carried out. Annealing temperature affects the structural and optical properties of the Al 2 O 3 thin films. The refractive index and extinction coefficient of the films at 550 nm wavelength increase from 1.56 to 1.66, and from 3.41 × 10-5 to 5.54 × 10-5, respectively while optical band gap and thickness of the films decrease from 4.15 eV to 4.11 eV, and 360 nm to 260 nm, respectively, by increasing annealing temperature from 100°C to 500°C.

Refractive Index and Extinction Coefficient of ZnO:Al Thin Films Derived by Sol-Gel Dip Coating Technique

2013 ◽  
Vol 334-335 ◽  
pp. 290-293 ◽  
Author(s):  
N. Baydogan ◽  
T. Ozdurmusoglu ◽  
Huseyin Cimenoglu ◽  
A.B. Tugrul
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Extinction Coefficient ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Optical Parameters ◽  
Coating Technique ◽  
Glass Substrates ◽  
Dip Coating Technique

Doped ZnO:Al thin films were deposited on glass substrates by the solgel dip technique. Optical parameters such as the refractive index and the extinction coefficient tend to change with increasing annealing temperature.

Thermal Annealing-Activated Crystallinity Metastasis of Al:ZnO Thin Films

2015 ◽  
Vol 1109 ◽  
pp. 181-185 ◽  
Author(s):  
Mohd Firdaus Malek ◽  
Mohamad Hafiz Mamat ◽  
M.Z. Musa ◽  
M. Rusop
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dip Coating Technique ◽  
Multilayered Thin Films

Multilayered thin films of aluminum-doped ZnO (Al:ZnO) have been deposited by the sol-gel dip coating technique. Experimental results indicated that the thermal annealing temperature affected the crystallinity of the Al:ZnO films. X-ray diffraction (XRD) analysis showed that thin films were preferentially orientated along the c-axis plane. The preferred orientation along (0 0 2) plane becomes more pronounced as the thermal annealing being increased. The film thickness ranges between 180 and 690 nm. In our experiments, the most optimum condition of Al:ZnO annealing temperature was both 500 oC.

scholarly journals Enhanced visible transmittance and reduced transition temperature for VO2 thin films modulated by index-tunable SiO2 anti-reflection coatings

RSC Advances ◽  
2018 ◽  
Vol 8 (51) ◽  
pp. 28953-28959 ◽  
Author(s):  
Maodong Zhu ◽  
Hongji Qi ◽  
Bin Wang ◽  
Hu Wang ◽  
Dongping Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Coating Technique ◽  
Infrared Transmittance ◽  
Visible Transmittance ◽  
P Index ◽  
Dip Coating Technique ◽  
Vo2 Thin Films

Index-tunable anti-reflection SiO2 coatings prepared on the surface of VO2 films by sol–gel dip-coating technique to enhance the visible and infrared transmittance of SiO2/VO2 films.

Crack-free nanostructured BaTiO3 thin films prepared by sol–gel dip-coating technique

2014 ◽  
Vol 40 (6) ◽  
pp. 8613-8619 ◽  
Author(s):  
R. Ashiri ◽  
A. Nemati ◽  
M. Sasani Ghamsari
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dip Coating ◽  
Coating Technique ◽  
Dip Coating Technique

Structural and Morphological Properties of HfxZr1-xO2 Thin Films Prepared by Pechini Route

2010 ◽  
Vol 644 ◽  
pp. 113-116
Author(s):  
L.A. García-Cerda ◽  
Bertha A. Puente Urbina ◽  
M.A. Quevedo-López ◽  
B.E. Gnade ◽  
Leo A. Baldenegro-Perez ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Annealing Temperature ◽  
Precursor Solution ◽  
Dip Coating ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dip Coating Technique ◽  
Scanning Electron

In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm.

Poole-Frenkel effect in nanocrystalline SnO2:F thin films prepared by a sol-gel dip-coating technique

2004 ◽  
Vol 201 (5) ◽  
pp. 983-989 ◽  
Author(s):  
A. N. Banerjee ◽  
R. Maity ◽  
S. Kundoo ◽  
K. K. Chattopadhyay
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dip Coating ◽  
Coating Technique ◽  
Frenkel Effect ◽  
Dip Coating Technique
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