EFFECT OF ANNEALING TEMPERATURE ON THE OPTICAL AND STRUCTURAL PROPERTIES OF DIP-COATED Al2O3 THIN FILMS PREPARED BY SOL–GEL ROUTE

2005 ◽  
Vol 12 (05n06) ◽  
pp. 793-797 ◽  
Author(s):  
F. E. GHODSI ◽  
M. MAFAKHERI ◽  
A. NOVINROOZ
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Sol Gel Process ◽  
Dip Coating Technique

Thin films of Al 2 O 3 were prepared by the sol–gel process. Dip-coating technique was used for deposition of the Al 2 O 3 thin films onto glass substrates. Optical and structural properties of the films were investigated with respect to the annealing temperature (100–500°C). The structure of these films was determined by X-ray diffraction (XRD). Scanning electron microscopy (SEM) was performed for the analysis of surface morphology. For determination of the optical constants of Al 2 O 3 thin films, UV-Visible spectrophotometry measurements were carried out. Annealing temperature affects the structural and optical properties of the Al 2 O 3 thin films. The refractive index and extinction coefficient of the films at 550 nm wavelength increase from 1.56 to 1.66, and from 3.41 × 10-5 to 5.54 × 10-5, respectively while optical band gap and thickness of the films decrease from 4.15 eV to 4.11 eV, and 360 nm to 260 nm, respectively, by increasing annealing temperature from 100°C to 500°C.

PREPARATION AND DETERMINATION OF OPTICAL PROPERTIES OF NiO THIN FILMS DEPOSITED BY DIP COATING TECHNIQUE

2007 ◽  
Vol 14 (02) ◽  
pp. 219-224 ◽  
Author(s):  
F. E. GHODSI ◽  
S. A. KHAYATIYAN
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Visible Range ◽  
X Ray Diffraction ◽  
Coating Technique ◽  
Number Of Layers ◽  
Dip Coating Technique

The NiO thin films were prepared from NiCl 2 · 6 H 2 O precursor by using sol–gel route. The films were deposited on a glass substrate using dip-coating technique. The optical and structural properties of the NiO thin films were investigated with respect to dipping rate, number of layers, and annealing temperature. The microstructure of NiO thin films and powder were examined by X-ray diffraction (XRD). Various diffraction peaks of NiO powder were observed in the XRD pattern. The morphology of the films was studied by using scanning electron microscopy (SEM). The optical characteristics of the samples were determined by using UV–visible spectrophotometer. The results show that the NiO thin films are transparent in the visible range. Optical constants (refractive index, extinction coefficient…) were changed by varying dipping rate, number of layers, and annealing temperature.

Refractive Index and Extinction Coefficient of ZnO:Al Thin Films Derived by Sol-Gel Dip Coating Technique

2013 ◽  
Vol 334-335 ◽  
pp. 290-293 ◽  
Author(s):  
N. Baydogan ◽  
T. Ozdurmusoglu ◽  
Huseyin Cimenoglu ◽  
A.B. Tugrul
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Extinction Coefficient ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Optical Parameters ◽  
Coating Technique ◽  
Glass Substrates ◽  
Dip Coating Technique

Doped ZnO:Al thin films were deposited on glass substrates by the solgel dip technique. Optical parameters such as the refractive index and the extinction coefficient tend to change with increasing annealing temperature.

Thermal Annealing-Activated Crystallinity Metastasis of Al:ZnO Thin Films

2015 ◽  
Vol 1109 ◽  
pp. 181-185 ◽  
Author(s):  
Mohd Firdaus Malek ◽  
Mohamad Hafiz Mamat ◽  
M.Z. Musa ◽  
M. Rusop
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dip Coating Technique ◽  
Multilayered Thin Films

Multilayered thin films of aluminum-doped ZnO (Al:ZnO) have been deposited by the sol-gel dip coating technique. Experimental results indicated that the thermal annealing temperature affected the crystallinity of the Al:ZnO films. X-ray diffraction (XRD) analysis showed that thin films were preferentially orientated along the c-axis plane. The preferred orientation along (0 0 2) plane becomes more pronounced as the thermal annealing being increased. The film thickness ranges between 180 and 690 nm. In our experiments, the most optimum condition of Al:ZnO annealing temperature was both 500 oC.

Optical Properties of Nanostructured Sol–Gel Thin Films Doped with Fe2O3 and Their Ferromagnetic Characterization by Mössbauer Spectroscopy

2008 ◽  
Vol 8 (12) ◽  
pp. 6491-6496
Author(s):  
Jorge Garcia-Macedo ◽  
Guadalupe Valverde-Aguilar ◽  
Raúl W. Gómez ◽  
José L. Pérez-Mazariego ◽  
Vivianne Marquina
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Coating Method ◽  
Dip Coating Method

Sol–gel thin films containing Fe2O3 were deposited onto glass substrates by the dip-coating method at room temperature. Fe2O3 enriched with the isotope 57Fe was embedded in two kinds of matrices: zinc oxide (ZnO) and silica (SiO2). X-ray diffraction (XRD) was used for morphology and structure determination of the nanostructures and showed that the ZnO exhibit a wurtzite form when the film is annealed at 450 °C for 20 min. SiO2 thin films at C16H33PEO20:Fe2O3 = 1:2.7 × 10−1 molar concentration exhibit a hexagonal nanophase produced by the diblock copolymer Brij58 (C16H33PEO20). Optical absorption and infrared spectroscopy techniques were used to evaluate the optical quality of the films. In order to determine if the Fe2O3 was incorporated into the matrices, room temperature Mössbauer spectra of both samples were obtained. In both cases the hematite spectrum was obtained, corroborating that the incorporation of the Fe2O3 to the matrices was done without chemical reaction whatsoever.

Structural and Morphological Properties of HfxZr1-xO2 Thin Films Prepared by Pechini Route

2010 ◽  
Vol 644 ◽  
pp. 113-116
Author(s):  
L.A. García-Cerda ◽  
Bertha A. Puente Urbina ◽  
M.A. Quevedo-López ◽  
B.E. Gnade ◽  
Leo A. Baldenegro-Perez ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Annealing Temperature ◽  
Precursor Solution ◽  
Dip Coating ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dip Coating Technique ◽  
Scanning Electron

In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm.

Sol-gel derived Ba(Mg1/3Ta2/3)O3 thin films: Preparation and structure

1997 ◽  
Vol 12 (3) ◽  
pp. 596-599 ◽  
Author(s):  
Ji Zhou ◽  
Qing-Xin Su ◽  
K. M. Moulding ◽  
D. J. Barber
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Volume Fraction ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Sol Gel Process ◽  
Small Grains

Ba(Mg1/3Ta2/3)O3 thin films were prepared by a sol-gel process involving the reaction of barium isopropoxide, tantalum ethoxide, and magnesium acetate in 2-methoxyethanol and subsequently hydrolysis, spin-coating, and heat treatment. Transmission electron microscopy, x-ray diffraction, and Raman spectroscopy were used for the characterization of the thin films. It was shown that the thin films tend to crystallize with small grains sized below 100 nm. Crystalline phase with cubic (disordered) perovskite structure was formed in the samples annealed at a very low temperature (below 500 °C), and well-crystallized thin films were obtained at 700 °C. Although disordered perovskite is dominant in the thin films annealed below 1000 °C, a low volume fraction of 1 : 2 ordering domains was found in the samples and grows with an increase of annealing temperature.

scholarly journals Characteristics and optical properties of Fe3+ doped SiO2/TiO2 thin films prepared by the sol-gel dip-coating method

2013 ◽  
Vol 16 (1) ◽  
pp. 92-100
Author(s):  
Chien Mau Dang ◽  
Dam Duy Le ◽  
Tam Thi Thanh Nguyen ◽  
Dung Thi My Dang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
Water Contact ◽  
Glass Substrates ◽  
Coating Method ◽  
Dip Coating Method

In this study, we have successfully synthesized Fe3+ doped SiO2/TiO2 thin films on glass substrates using the sol-gel dip-coating method. After synthesizing, the samples were annealed at 5000C in the air for 1 hour. The characteristics and optical properties of Fe3+ doped SiO2/TiO2 films were then investigated by X-ray diffraction (XRD), ultraviolet-visible spectroscopy (UV-vis) and Fourier transform infrared spectroscopy (FT-IR). An antifogging ability of the glass substrates coated with the fabricated film is investigated and explained by a water contact angle under visible-light. The analyzed results also show that the crystalline phase of TiO2 thin films comprised only the anatase TiO2, but the crystalline size decreased from 8.8 to 5.9 nm. We also observed that the absorption edge of Fe3+- doped SiO2/TiO2 thin films shifted towards longer wavelengths (i.e. red shifted) from 371.7nm to 409.2 nm when the Fe3+-doped concentration increased from 0 to 1 % mol.

Characterization of Iron Oxide Nanoparticles for Sol-Gel Dip-Coating Method Prepared Thin Films

2013 ◽  
Vol 704 ◽  
pp. 275-280
Author(s):  
Janina Setina ◽  
Alona Gabrene ◽  
Inna Juhnevica ◽  
Gundars Mezinskis
Keyword(s):  
Thin Films ◽  
Iron Oxide ◽  
Iron Oxides ◽  
Sol Gel ◽  
Morphological Characteristics ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
Coating Method ◽  
Dip Coating Method ◽  
Dip Coating Technique

The paper describes two methods of syntheses of iron oxides, microstructure and morphology of magnetite nanoparticles. Nanocomposite thin films of SiO2/Fe3O4 have been prepared with sol-gel dip coating technique: dip-coating from SiO2/Fe3O4 sol and encapsulation magnetite between two SiO2 layers. Structural and morphological characteristics of iron oxides particles and prepared film were analyzed by X-Ray Diffraction, SEM, FTIR, DTA, AFM. AFM topography of surface and measurements of roughness has shown that using iron oxide encapsulation between two SiO2 layers to provide the even distribution of iron oxide, results as high quality films with low Rq values 1.5 2.7 nm.

scholarly journals TiO2 waveguides thin films prepared by sol-gel method on glass substrates with and without ZnO underlayer

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Y. Bouachiba ◽  
A. Taabouche ◽  
A. Bouabellou ◽  
F. Hanini ◽  
C. Sedrati ◽  
...  
Keyword(s):  
Thin Films ◽  
Glass Sample ◽  
Anatase Phase ◽  
Sol Gel ◽  
Single Mode ◽  
Dip Coating ◽  
Glass Substrates ◽  
Diffraction Peaks ◽  
Xrd Patterns

AbstractTiO2 thin films have been deposited on glass substrates with and without ZnO underlayer by sol-gel dip coating process. XRD patterns show the formation of anatase phase with the diffraction lines (1 0 1) and (2 0 0) in TiO2/glass sample. In TiO2/(ZnO/glass) sample, TiO2 is composed of anatase phase with the diffraction line (2 0 0) but the diffraction peaks of ZnO wurtzite are also well-defined. The determination of the refractive index and the thickness of the waveguiding layers has been performed by m-lines spectroscopy. The thickness of TiO2 thin films deduced by Rutheford Backscattering Geometry (RBS) agrees well with that obtained by m-lines spectroscopy. TiO2/glass sample exhibits one guided TE0 and TM0 polarized modes. In TiO2/(ZnO/glass) sample, only, TE0 single mode has been excited due to cutoff condition.

Preparation and characterization of SiO2/fluoroalkyl-trialkoxysilane/2-hydroxyethyl methacrylate/trimethylolpropane triacrylate and SiO2/3-(trimethoxysilyl)propyl methacrylate/ 2-hydroxyethyl methacrylate/trimethylolpropane triacrylate coatings on glass substrates using the sol-gel method

2016 ◽  
Vol 36 (3) ◽  
pp. 309-320 ◽  
Author(s):  
Wei-Ming Chiu ◽  
Jhih-Siao Syu ◽  
Peir-An Tsai ◽  
Jyh-Horng Wu
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dip Coating ◽  
Hydroxyethyl Methacrylate ◽  
Pencil Hardness ◽  
Propyl Methacrylate ◽  
Glass Substrates ◽  
Trimethylolpropane Triacrylate ◽  
Sol Gel Process

Abstract Organic/inorganic hybrid materials were formed using the sol-gel process, in which SiO2/fluoroalkyl-trialkoxysilane (FAS)/2-hydroxyethyl methacrylate (2-HEMA)/trimethylolpropane triacrylate (TMPTA) and SiO2/3-(trimethoxysilyl)propyl methacrylate (MSMA)/ 2-HEMA/TMPTA thin films were formed on a glass substrate using dip coating. Experimental results revealed that FAS and MSMA improved the pencil hardness of SiO2/2-HEMA/TMPTA thin films without affecting their optical properties. FAS strengthened the hydrophobic and hydrophilic characteristics of SiO2/2-HEMA/TMPTA thin films more than did MSMA. However, an excess of FAS and an increase in withdrawal rates deteriorates the gloss, because both increased the SiO2 content, reducing the reflectivity.

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