Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO2/4H-SiC MOSFETs
2018 ◽
Vol 924
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pp. 285-288
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Keyword(s):
In this paper, near interface traps (NITs) in lateral 4H-SiC MOSFETs were investigated employing temperature dependent transient gate capacitance measurements (C-t). TheC-tmeasurements as a function of temperature indicated that the effective NITs discharge time is temperature independent and electrons from NITs are emitted toward the semiconductor via-tunnelling and/or trap-to-trap tunnelling. The NITs discharge time was modelled taking into account also the interface state density in a distributed circuit and it allowed to locate traps within a distance of about 1.3nm from the SiO2/4H-SiC interface.
1980 ◽
Vol 27
(12)
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pp. 2231-2239
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2015 ◽
Vol 2
(9)
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pp. 096304
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2007 ◽
Vol 14
(04)
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pp. 765-768
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2013 ◽
Vol 133
(7)
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pp. 1279-1284
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1998 ◽
Keyword(s):
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2014 ◽
Vol 778-780
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pp. 631-634
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2017 ◽
Vol 254
(8)
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pp. 1600691
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