The energy distribution of the interface state density of SnO2/p-Si (111) heterojunctions prepared at different substrate temperatures by spray deposition method

2005 ◽  
Vol 246 (1-3) ◽  
pp. 30-35 ◽  
Author(s):  
S. Karadeniz ◽  
N. Tuğluoğlu ◽  
T. Serin ◽  
N. Serin
Keyword(s):  
Energy Distribution ◽  
Spray Deposition ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Deposition Method ◽  
Substrate Temperatures ◽  
Spray Deposition Method

In-Situ Etch to Improve Chemical Beam Epitaxy Regrown AlgaAs/GaAs Interfaces for HBT Applications

1996 ◽  
Vol 448 ◽  
Author(s):  
Y.M. Hsin ◽  
N. Y. Li ◽  
C. W. Tu ◽  
P. M. Asbeck
Keyword(s):  
Etching Rate ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Chemical Beam Epitaxy ◽  
Capacitance Voltage ◽  
Substrate Temperatures ◽  
Etching Effect

AbstractWe have studied the etching effect of AlxGa1-xAs (0≤ x ≤ 0.5) by trisdimethylaminoarsenic (TDMAAs) at different substrate temperatures, and the quality of the resulting etched/regrown GaAs interface. We find that the etching rate of AlxGa1-x As decreases with increasing Al composition, and the interface trap density of the TDMAAs etched/regrown interface can be reduced by about a factor of 10 as deduced from capacitance-voltage carrier profiles. A smooth surface morphology of GaAs with an interface state density of 1.4×l011 cm−2 can be obtained at a lower in-situ etching temperature of 550°C. Moreover, by using this in-situ etching the I-V characteristics of regrown p-n junctions of Al0.35Ga0.65As/Al0.25Ga0.75As and Al0.35Ga0.65As/GaAs can be improved.

DENSITY OF SURFACE STATES IN Pd/SiGe/Si INTERFACE FROM CAPACITANCE MEASUREMENTS

2007 ◽  
Vol 14 (04) ◽  
pp. 765-768 ◽  
Author(s):  
A. SELLAI ◽  
M. MAMOR ◽  
S. AL-HARTHI
Keyword(s):  
Energy Distribution ◽  
Schottky Barrier ◽  
Reverse Bias ◽  
Surface States ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Schottky Barrier Diodes ◽  
Capacitance Measurements

Pd / Si 0.9 Ge 0.1/ Si Schottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. The C–V technique has been used in particular to determine the carriers profile as well as the interface state density and its energy distribution.

The energy distribution of the interface state density of Pb/p-Si Schottky contacts exposed to clean room air

2003 ◽  
Vol 207 (1-4) ◽  
pp. 190-199 ◽  
Author(s):  
H.A Çetinkara ◽  
A Türüt ◽  
D.M Zengı̀n ◽  
Ş Erel
Keyword(s):  
Energy Distribution ◽  
Interface State ◽  
State Density ◽  
Schottky Contacts ◽  
Interface State Density ◽  
Clean Room

Interface-State-Density Evaluation of p-type and n-type Ge/GeNx Structures by Conductance Technique

2013 ◽  
Vol 133 (7) ◽  
pp. 1279-1284
Author(s):  
Takuro Iwasaki ◽  
Toshiro Ono ◽  
Yohei Otani ◽  
Yukio Fukuda ◽  
Hiroshi Okamoto
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Technique ◽  
Density Evaluation ◽  
P Type

Identification of Charging Effects in Plasma-Enhanced TEOS Deposition with Non-Contact Test Techniques

1998 ◽  
Author(s):  
Tomasz Brozek ◽  
James Heddleson
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Wafer Surface ◽  
Oxide Charge ◽  
Contact Test ◽  
Deposition Power ◽  
Oxide Deposition

Abstract Use of non-contact test techniques to characterize degradation of the Si-SiO2 system on the wafer surface exposed to a plasma environment have proven themselves to be sensitive and useful in investigation of plasma charging level and uniformity. The current paper describes application of the surface charge analyzer and surface photo-voltage tool to explore process-induced charging occurring during plasma enhanced chemical vapor deposition (PECVD) of TEOS oxide. The oxide charge, the interface state density, and dopant deactivation are studied on blanket oxidized wafers with respect to the effect of oxide deposition, power lift step, and subsequent annealing.

Correlation between 1/fnoise and interface state density at the Fermi level in field‐effect transistors

1985 ◽  
Vol 57 (10) ◽  
pp. 4811-4813 ◽  
Author(s):  
Herman E. Maes ◽  
Sabir H. Usmani ◽  
Guido Groeseneken
Keyword(s):  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Interface State ◽  
State Density ◽  
Interface State Density

scholarly journals Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation

2014 ◽  
Vol 778-780 ◽  
pp. 631-634 ◽  
Author(s):  
Yoshiyuki Akahane ◽  
Takuo Kano ◽  
Kyosuke Kimura ◽  
Hiroki Komatsu ◽  
Yukimune Watanabe ◽  
...  
Keyword(s):  
Interface State ◽  
Nitride Layer ◽  
State Density ◽  
Interface State Density ◽  
Process Temperature ◽  
Pure Nitrogen ◽  
Interface Property ◽  
Plasma Nitridation

A nitride layer was formed on a SiC surface by plasma nitridation using pure nitrogen as the reaction gas at the temperature from 800°C to 1400°C. The surface was characterized by XPS. The XPS measurement showed that an oxinitride layer was formed on the SiC surface by the plasma nitridation. The high process temperature seemed to be effective to activate the niridation reaction. A SiO2film was deposited on the nitridation layer to form SiO2/nitride/SiC structure. The interface state density of the SiO2/nitride/SiC structure was lower than that of the SiO2/SiC structure. This suggested that the nitridation was effective to improve the interface property.

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