THE EFFECT OF TEMPERATURE ON SYNTHESIS AND CHARACTERIZATION OF BMN–BASE PIEZOELECTRIC THIN FILM PREPARED BY SPRAY PYROLYSIS

2012 ◽  
Vol 19 (03) ◽  
pp. 1250032
Author(s):  
M. GHASEMIFARD

The 0.65Ba(Mg1/3,Nb2/3)O3-0.35BaTiO3 thin films was deposited on glass/aluminum substrates by using spray pyrolysis method. The effect of annealing temperature on perovskite phase and crystalline structure analysis of the BMN-BT films was performed on an X-ray diffraction (XRD). Surface morphology, roughness and particle size of the BMN-BT thin films was characterized with atomic force microscopy (AFM) and scanning electronic microscopy (SEM). Polarization hysteresis measurements was performed at different temperatures. From the P–E hysteresis loops one can observe the best temperature that led to improved properties of dielectric constant, polarization and piezoelectric coefficients were 600°C.

2012 ◽  
Vol 26 (02) ◽  
pp. 1150009 ◽  
Author(s):  
M. GHASEMIFARD

By using spray pyrolysis method, 0.65 Ba ( Mg 1/3, Nb 2/3) O 3-0.35 BaTiO 3 thin films were deposited on glass/aluminum substrates. The effect of annealing temperature on perovskite phase and crystalline structure analysis of the BMN-BT films performed on an X-ray diffraction (XRD). The optical properties of the resultant materials have been characterized as a function of substrate's temperature. The absorption coefficient (α) and extinction coefficient (k) of the films are obtained by using UV-vis spectroscopy. The band gap energy values of the films using analysis of the absorption coefficient and Tauc's formula have also been determined. For films deposited at different substrate temperatures, direct transitions occur with energies varying from 4.57 eV to 4.21 eV.


AIP Advances ◽  
2016 ◽  
Vol 6 (2) ◽  
pp. 025121 ◽  
Author(s):  
C. Panatarani ◽  
S. Fitriyadi ◽  
N. Balasubramanian ◽  
N. S. Parmar ◽  
I. M. Joni

2019 ◽  
Vol 60 ◽  
pp. 63-75 ◽  
Author(s):  
Naoual Houaidji ◽  
Mejda Ajili ◽  
Baghdadi Chouial ◽  
Najoua Turki Kamoun ◽  
Kenza Kamli ◽  
...  

Transparent conducting Cobalt-fluorine co-doped tin oxide (SnO2: (Co, F)) thin filmswere deposited onto preheated glass substrates using the chemical spray pyrolysis method. The ([Co2+]/[Sn4+]) atomic concentration ratio (y)in the spray solution was varied between 0 and 5 at. %. The structural, electrical, optical and photoluminescence properties of these films were studied. It is found that the thin films are polycrystalline with a tetragonal crystal structure corresponding to SnO2 phase having a preferred orientation along the (200) plane. Transmission and reflection spectra reveal the presence of interference fringes indicating thickness uniformity and surface homogeneity of the deposited thin films. The electrical resistivity (ρ), volume carrier concentration density (Nv), surface carrier concentration density (Ns) and Hall mobility (μ) of the synthesized thin films were determined from the Hall Effect measurements in the Van der Paw-configuration and the following results were obtained: n-type conductivity in all deposited films, a low resistivity of 1.16×10-2 Ω.cm, and a high Hall mobility of 15.13×102 cm2.V-1.s-1with Co concentration equals to 3 at. %. These results show that the electrical properties of these thin films where greatly improved making them suitable as ohmic contact in photovoltaic application devices.


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