FABRICATION AND CHARACTERIZATION OF TiO2 THIN FILM FOR DEVICE APPLICATIONS

2019 ◽  
Vol 26 (06) ◽  
pp. 1850205
Author(s):  
A. HOSSEINI ◽  
H. H. GÜLLÜ ◽  
E. COSKUN ◽  
M. PARLAK ◽  
C. ERCELEBI
Keyword(s):  
Rf Magnetron Sputtering ◽  
Window Layer ◽  
Device Structure ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Conductivity Type ◽  
Device Applications ◽  
Rectification Factor ◽  
Device Properties ◽  
Deposited Film

Titanium oxide (TiO2) film was deposited by rectification factor (RF) magnetron sputtering technique on glass substrates and p-Si (111) wafers to fabricate n-TiO2/p-Si heterojunction devices for the investigation of material and device properties, respectively. The structural, surface morphology, optical and electrical properties of TiO2 film were characterized by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), UV–visual (UV–Vis) spectral and dark current-voltage (I–V) measurement analyses. The deposited film layer was found to be homogeneous structure with crack-free surface. The bandgap value of TiO2 film was determined as 3.6[Formula: see text]eV and transmission was around 65–85% in the spectral range of 320–1100[Formula: see text]nm. The conductivity type of the deposited film was determined as n-type by hot probe method. These values make TiO2 film a suitable candidate as the n-type window layer in possible diode applications. TiO2 film was also deposited on p-Si (111) wafer to obtain Al/n-TiO2/p-Si/Al heterojunction device structure. The dark I–V characteristic was studied to determine the possible conduction mechanisms and diode parameters.

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

Mechanical Properties of CrN Films Deposited by Magnetron Sputtering Method

Tribology ◽  
2006 ◽  
Author(s):  
A. H. Jayatissa ◽  
D. Wagner ◽  
S. Sorin ◽  
N. X. Randall
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Film Properties ◽  
Adhesion Properties ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Mechanical Coating ◽  
Deposition Conditions

The mechanical properties of CrN films coated by radio frequency (rf) magnetron sputtering method were investigated. CrN films were coated on stainless steel, silicon wafer and glass substrates using sputtering of a Cr target in nitrogen ambient. The films were coated by varying the deposition temperature, nitrogen partial pressure and rf power density. The films coated were characterized by nanoindentation method, microhardness, optical, and corrosion tests. In order to use CrN as mechanical coating material, the surface roughness, hardness and adhesion properties have to be determined. The film properties were measured using atomic force microscopy and nanoindentation method and analyzed as a function of deposition conditions. It was found that these properties can be varied by changing the deposition conditions.

Electrochemical Behavior of LiFePO4 Thin Film Prepared by RF Magnetron Sputtering in Li2SO4 Aqueous Electrolyte

2015 ◽  
Vol 14 (01n02) ◽  
pp. 1460027 ◽  
Author(s):  
Jiaxiong Wu ◽  
Wei Cai ◽  
Guangyi Shang
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Ion Diffusion ◽  
X Ray Diffraction ◽  
Electrochemical Tests ◽  
Force Microscopy ◽  
Atomic Force ◽  
Li Ion ◽  
Deposited Film

LiFePO 4 films were deposited on Au / Si substrate by radio-frequency magnetron sputtering. The effect of annealing on the crystallization and morphology of LiFePO 4 thin film has been investigated. X-ray diffraction revealed that the films through annealing were well crystallized compared with as-deposited films. The surface morphology of the thin film was also observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrochemical tests in 1M Li 2 SO 4 showed that the annealed thin film in 500°C exhibits larger Li -ion diffusion coefficient (3.46 × 10-7 cm2s-1) than as-deposited film and powder. Furthermore, cyclic voltammetry demonstrate a well-defined lithium intercalation/deintercalation reaction at around 0.45 V versus SCE (i.e., 3.6 V versus Li +/ Li ), suggesting that the annealed LiFePO 4 thin film is a promising candidate cathode film for lithium microbatteries.

scholarly journals Development of Textured ITO Optical Windows for Photovoltaic Applications

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
N. Tamilselvan ◽  
Periyasamy Thilakan
Keyword(s):  
Rf Magnetron Sputtering ◽  
Sem Analysis ◽  
Preferential Orientation ◽  
Rf Power ◽  
Sputtering Deposition ◽  
Glass Substrates ◽  
Deposition Parameters ◽  
Photovoltaic Applications ◽  
Ito Thin Films ◽  
Deposited Film

ITO thin films were deposited on glass substrates using rf magnetron sputtering. Deposition parameters such as the rf power and the oxygen dilution to the plasma are investigated. Films deposited with an increase in rf power were resulting in the film preferential orientation along (100) plane. Oxygen dilution to the plasma at low rf power of 30 W was found to result in a change in preferential orientation from (100) plane to (111) plane. SEM analysis revealed a spotty surface morphology for the (100) films and a granular morphology for the (111) films. The highest transmittance was found for the oxygen diluted (111) film. The highest optical bandgap of 4.33 eV was observed for the pure Ar deposited film. Details are discussed.

scholarly journals Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

2015 ◽  
Vol 2015 ◽  
pp. 1-11 ◽  
Author(s):  
Fang-Hsing Wang ◽  
Jen-Chi Chao ◽  
Han-Wen Liu ◽  
Tsung-Kuei Kang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Surface ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Diffraction Patterns ◽  
Substrate Temperatures

Transparent conducting titanium-doped zinc oxide (TZO) thin films were prepared on glass substrates by RF magnetron sputtering using 1.5 wt% TiO2-doped ZnO as the target. Electrical, structural, and optical properties of films were investigated as a function of H2/(Ar + H2) flow ratios (RH) and substrate temperatures (TS). The optimalRHvalue for achieving high conducting TZO:H thin film decreased from 10% to 1% whenTSincreased from RT to 300°C. The lowest resistivity of9.2×10-4 Ω-cm was obtained asTS=100°C andRH=7.5%. X-ray diffraction patterns showed that all of TZO:H films had a hexagonal wurtzite structure with a preferred orientation in the (002) direction. Atomic force microscopy analysis revealed that the film surface roughness increased with increasingRH. The average visible transmittance decreased with increasingRHfor the RT-deposited film, while it had not considerably changed with differentRHfor the 300°C-deposited films. The optical bandgap increased asRHincreased, which is consistent with the Burstein-Moss effect. The figure of merits indicated thatTS=100°C andRH=7.5% were optimal conditions for TZO thin films as transparent conducting electrode applications.

Fabrication and Characterization of RF Magnetron Sputtered Silicon Oxide Films

2014 ◽  
Vol 970 ◽  
pp. 102-105
Author(s):  
Jian Wei Hoon ◽  
Kah Yoong Chan ◽  
Cheng Yang Low
Keyword(s):  
Indium Tin Oxide ◽  
Silicon Oxide ◽  
Rf Magnetron Sputtering ◽  
Surface Topology ◽  
Sputtering Deposition ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Fabrication And Characterization

In this work, silicon dioxide (SiO2) films were fabricated on indium tin oxide (ITO) coated glass substrates by radio frequency (RF) magnetron sputtering deposition technique. The deposition rate of the magnetron sputtered SiO2 films was investigated. The SiO2 films were characterized with the atomic force microscopy (AFM) for their surface topology. In addition, the electrical insulating strength of the magnetron sputtered SiO2 was examined.

Effects of Growth Temperature on the Structural Properties of Zinc Oxide Nanograins Deposited by RF Magnetron Sputtering

2014 ◽  
Vol 895 ◽  
pp. 500-504
Author(s):  
N. Ameera ◽  
A. Shuhaimi ◽  
S. Najwa ◽  
K.M. Hakim ◽  
M. Mazwan ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Growth Temperature ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force

Nanograins zinc oxide (ZnO) withc-axis preferred orientation was deposited on glass substrates by RF magnetron sputtering. It was performed with a ZnO target with 99.999% purity at RF power of 200 W. The deposition was carried out in argon and oxygen ambient at the ratio flow-rates of 10 and 5 sccm respectively, with total deposition time of 1 hour. The films were grown atgrowth temperatures were specified at RT, 100, 200, 300, 400 and 500°C. The effects of the growth temperature on the ZnO structural property was investigated by x-ray diffraction (XRD). The best ZnO crystalline quality obtained at growth temperature, TGof 300°C was further characterized by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM).

Characterization of ITO/Ag and ITO/Ni Bi-Layer Transparent Conductive Electrodes

2014 ◽  
Vol 1024 ◽  
pp. 75-78
Author(s):  
Ahmad Hadi Ali ◽  
Ahmad Shuhaimi ◽  
Mohd Anas Ahmad ◽  
Hassan Zainuriah
Keyword(s):  
Morphological Characteristics ◽  
Hall Effect Measurement ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Glass Substrates ◽  
Atomic Force ◽  
Device Applications ◽  
Thermal Evaporator ◽  
High Carrier ◽  
Transparent Conductive Electrodes

This paper reports on ITO/Ag and ITO/Ni thin transparent conductive electrodes (TCE) for optoelectronics device applications. The ITO/Ag and ITO/Ni bi-layer TCE were deposited on Si and glass substrates by thermal evaporator and radio frequency (RF) magnetron sputtering. Post-annealing was performed on the samples at 600°C in air. Electrical, optical and morphological characteristics were investigated by means of Hall Effect measurement system, UV-Vis spectrophotometer and atomic force microscope (AFM). The measured electrical resistivity of ITO/Ag (0.5 × 10-4Ωcm) is lower than ITO/Ni (1.2 × 10-4Ωcm) due to the high carrier concentration of ITO/Ag of 12.0 × 1021cm-3. Optical transmittance at visible ranges of ITO/Ag (70%) is higher than the ITO/Ni (44%). Higher surface roughness and smaller grain sizes of ITO/Ag as compared to the ITO/Ni are factors that contribute to the good quality of TCE characteristics.

Influence of Deposition Time on ZnO Films Grown by RF Magnetron Sputtering

2012 ◽  
Vol 562-564 ◽  
pp. 175-178 ◽  
Author(s):  
Zi Jun Ma
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Green Emission ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Green Emission Band ◽  
Atomic Force ◽  
Surface Morphologies

ZnO thin films were prepared on glass substrates by radio frequency co-reactive magnetron sputtering at different deposition time of 20, 40, 60 and 80 min. Surface morphologies and crystal structures were examined using atomic force microscopy and X-ray diffraction. As the deposition time increased to 60 min, surface morphologies of the films became smooth and distributed uniformly. The crystallinity along the c-axis improved as the deposition time increased. The photoluminescence (PL) studies indicate that three main emission peaks located at 439nm, 483nm and 525nm were observed. The intensity of 439nm emission increased to maximum as the deposition time was 80 min, while the intensity of green emission band (from 483 to 525nm) attained to maximum as the deposition time increased to 60 min.

Effect of RF Power on the Structural Properties of Magnetron Sputtered ZnO Thin Films Deposited at Room Temperature

2012 ◽  
Vol 626 ◽  
pp. 163-167
Author(s):  
Samsiah Ahmad ◽  
Nor Diyana Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Room Temperature ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Rf Power ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Sputtering Power

Zinc oxide thin films were prepared at room temperature in pure argon ambient on glass substrates by RF magnetron sputtering. The effect of sputtering power (50~250 Watt) on the structural properties of the film were investigated. The thickness of ZnO thin films was measured using surface profiler (Dektak 150+). Atomic force microscopy machine (AFM-Park system XE-100) was used to characterize the morphology while the crystalinity have been characterized using XRD (Rigaku Ultima IV). It was found that the thickness, growth rate and RMS roughness increases with increasing RF power. All films exhibit the (002) plane which correspond to hexagonal wurtzite structure with the highest peak at 150 Watt.

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