Interfacial Diffusion/Reaction and Electrical Properties of Pd Ultra-Thin Film on Sic at Different Annealing Temperatures

1998 ◽  
Vol 512 ◽  
Author(s):  
W. Lu ◽  
D. T. Shi ◽  
W. E. Collins ◽  
H. Chen ◽  
A. Burger
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Hydrogen Gas ◽  
Diffusion Reaction ◽  
Scanning Tunneling ◽  
Annealing Temperatures ◽  
Ultra Thin Film

ABSTRACTPd/SiC has been used as a high temperature hydrocarbon and hydrogen gas sensor in environmental and aeronautical applications. In this work, the relationships between diffusion, reaction, and interfacial chemical composition with electrical properties for Pd ultra-thin films on 6H-SiC (∼< 30Å) are studied at different annealing temperatures.Ultra-thin film Pd on 6H-SiC has been prepared by the RF sputtering method. The Schottky barrier heights are measured by XPS for an unannealed sample and samples annealed from 100°C to 400°C for 30 minutes, respectively. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range. The morphology from UHV-STM and AFM show that the unannealed Pd thin film had good uniformity across the SiC substrate, and the Pd has dispersed, and then partially aggregated into rounded shaped precipitates with increasing annealing temperatures. At 400°C, all Pd metal has reacted and formed to silicides. From XPS, Pd2Si was found on the surface after annealing, and almost all Pd has reacted to become Pd2Si after annealing at 400°C. No other silicide was found. The intensity of Pd on XPS decreases enormously at 400°C. This is explained if Pd has diffused into SiC. The Pd diffusion and the formation of Pd silicides do not significantly affect the Schottky barrier height. The SiO2 was found at the top of surface after annealing, and increased in amount with increasing annealing temperature. The SiO2 formation was accelerated by the presence of Pd. Pd may play a role in absorbing oxygen, and activating Si from SiC to form SiO2.Key Words: Pd thin film, SiC, X-ray photoelectron spectroscopy, scanning tunneling microscopy, and atomic force microscopy.

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

scholarly journals Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes

2018 ◽  
Vol 924 ◽  
pp. 593-596 ◽  
Author(s):  
Besar Asllani ◽  
Jean Baptiste Fonder ◽  
Pascal Bevilacqua ◽  
Dominique Planson ◽  
Luong Viet Phung ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Contact ◽  
Contact Temperature ◽  
Evolution Rate ◽  
Physical Parameters ◽  
Annealing Temperatures ◽  
Causes Of Failure ◽  
Surge Current

In this paper we will present the results of repetitive surge stress carried out on six 3.3 kV-5A Ti/Ni 4H-SiC JBS diodes. Repetitive current peaks between 10 A and 24 A have been applied and some diodes were able to endure 100,000 cycles while others failed before. The causes of failure have not been determined but a correlation between peak surge current and physical parameters evolution rate has been proven. Simulations show that contact temperature during surge can reach 300 °C, which is very close to Schottky contact annealing temperatures.

Effects of Self-Ion Bombardment on Al/Si(n) Schottky Barrier Formation

1986 ◽  
Vol 77 ◽  
Author(s):  
J. Wong ◽  
S.-N. Mei ◽  
T.-M. Lu
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Graphite Crucible ◽  
Barrier Formation ◽  
Expansion Technique ◽  
Al Thin Film ◽  
Deposited Films ◽  
Deposition Techniques

ABSTRACTWe have employed a nozzle jet expansion technique to deposit Al thin film on chemically cleaned Si(n) surface. Pure Al is evaporated in a graphite crucible at a temperature of 15 50°C and is then ejected through a small nozzle into a vacuum region of 10-6 Torr. The Schottky barrier height of the as-deposited films is measured (using the J-V technique) to be 0.77eV, which is substantially higher than that obtained by conventional evaporation-deposition techniques(≤0.68eV). Our result suggests that an intimate Al/Si(n) contact has been formed during the jet expansion deposition of Al films.During the deposition, the Al jet beam can be partially ionized by electron bombardment. It is shown that the Schottky barrier height remain unchanged if a bias potential of V s0.5KeV is applied to the substrate during deposition. For Va >0.5 KeV, the diode became leaky and the barrier height was reduced. The energetic of the jet beam, with and without post ionization and acceleration, is discussed with respect to thin film and interface formation.

ELECTRONIC TRANSPORT IN EPITAXIAL FILMS STUDIED BY SCANNING PROBE TECHNIQUES

1997 ◽  
Vol 04 (02) ◽  
pp. 307-318
Author(s):  
H. VON KÄNEL ◽  
H. SIRRINGHAUS ◽  
T. MEYER ◽  
E. Y. LEE
Keyword(s):  
Film Thickness ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Thickness Distribution ◽  
Scanning Tunneling Spectroscopy ◽  
Hole Injection ◽  
Scanning Tunneling ◽  
Hot Electron ◽  
Interfacial Defects

Hot electron transport in epitaxial CoSi2/Si heterostructures has been studied in situ by ballistic electron emission microscopy (BEEM) at 77 K. At CoSi2/Si(111) interfaces elastic scattering at interfacial defects could be imaged with spatial resolution on a nanometer scale. Hot electron injection across CoSi2/n-Si(111) interfaces was found to be favored by interface scattering, in contrast to hot hole injection across CoSi2/p-Si(111) , in agreement with expectations based on the projected Si band structure. Inelastic scattering within the metal film was found to become dominant at energies above ~4 eV, leading to a strong sensitivity of the BEEM current on film thickness variations. This could be exploited to generate maps of the film thickness distribution, facilitating the interpretation of quantum size effects (QSE's) which appear both in BEEM and in scanning tunneling spectroscopy. The variation of the BEEM current was found to be entirely due to scattering effects at CoSi2/Si(111) interfaces, the Schottky barrier height being constant. At CoSi2/Si(100) interfaces, however, a pronounced decrease in the Schottky barrier height was observed at certain interfacial defects, some of which are not yet identified.

Structure and Properties of WNx Thin Film on GaAs Substrate

1990 ◽  
Vol 216 ◽  
Author(s):  
Dali Mao ◽  
Weili Yu ◽  
Dongliang Lin ◽  
T.L. Lin
Keyword(s):  
Thin Film ◽  
Electrical Resistivity ◽  
Partial Pressure ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Gaas Substrate ◽  
Schottky Barrier Height ◽  
Stable Phase ◽  
Nitrogen Partial Pressure ◽  
Structure And Properties

ABSTRACTIn this paper, the effect of sputtering parameters on the interfacial reaction and the electronic properties of the WNx system were reported.The report showed that W and W2 N phases were observed in WNx film on GaAs substrate annealed at 800–900°C, in which no UN phase was found and W2N was the stable phase. Throughout the WNx film, W,N distributed uniformly. There was no interdiffusion between WN, films and GaAs substrate annealed at 80°C. However, at 900°C, there was some N in-diffusion to substrate, but no Ga or As out-diffusion. The electrical resistivity p of WNx films increased with increasing nitrogen partial pressure r. All the samples with r<0.2 showed the p below 200 µΩcm. By the I/V measurement, the Schottky Barrier Height was obtained with the value: øB=0.93ev, n=1.30 for WNx/n-GaAs contact that annealed at 850°C, 15 minutes.

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