ELECTRONICS OF MOLECULAR NANOCLUSTERS

2004 ◽  
Vol 03 (01n02) ◽  
pp. 137-147 ◽  
Author(s):  
V. V. KISLOV ◽  
Yu. V. GULYAEV ◽  
V. V. KOLESOV ◽  
I. V. TARANOV ◽  
S. P. GUBIN ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Langmuir Monolayers ◽  
Localized States ◽  
Nanocomposite Films ◽  
Molecular Cluster ◽  
Tunnel Current ◽  
Current Voltage ◽  
Single Electron Tunneling ◽  
Solid Substrates ◽  
Bottom To Top

The molecular nanoclusters proved to be very promising objects for applications in electronics not only because they have absolutely identical chemical structure and allow for bottom to top approach in constructing new electronic devices, but also for the possibility to design and create great variety of such clusters with specific properties. The formation and deposition of mixed Langmuir monolayers composed of inert amphiphile molecular matrix and guest ligand-stabilized metal-core nanoclusters are described. This approach allowed to obtain the ordered stable reproducible planar monolayer and multilayer nanocluster nanostructures on solid substrates. The use of novel polymeric Langmuir monolayers formed by amphiphilic polyelectrolytes and nanoclusters resulted in fabrication of ultimately thin monomolecular nanoscale-ordered stable planar polymeric nanocomposite films. The morphology and electron transport in fabricated nanostructures were studied experimentally using AFM and STM. The effects of single electron tunneling at room temperature through molecular cluster object containing finite number of localized states were theoretically investigated taking into account electron–electron Coulomb interaction. It is shown that tunnel current-bias voltage characteristic of such tunnel junction is characterized by a number of staircase steps equal to the number of cluster's eigenlevels, however the fronts of each steps are asymptotically linear with finite inclination. The analytically obtained current–voltage characteristics are in agreement with experimental results for electron tunneling through molecular nanoclusters at room temperatures.

Effect of the metal/organic interface phenomena on the current–voltage characteristics of organic single electron tunneling device

2001 ◽  
Vol 393 (1-2) ◽  
pp. 379-382 ◽  
Author(s):  
Tohru Kubota ◽  
Shiyoshi Yokoyama ◽  
Tatsuo Nakahama ◽  
Shinro Mashiko ◽  
Yutaka Noguchi ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Single Electron ◽  
Interface Phenomena ◽  
Current Voltage ◽  
Single Electron Tunneling ◽  
Metal Organic ◽  
Current Voltage Characteristics

scholarly journals Coulomb Blockade Effect in Well-Arranged 2D Arrays of Palladium Nano-Islands for Hydrogen Detection at Room Temperature: A Modeling Study

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 835
Author(s):  
Mahdi Khaje ◽  
Hassan Sedghi ◽  
Hadi Goudarzi ◽  
Mohammad Taghi Ahmadi ◽  
Seyed Saeid Rahimian Koloor ◽  
...  
Keyword(s):  
Power Consumption ◽  
Threshold Voltage ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Electron Tunneling ◽  
Pd Nanoparticles ◽  
Space Technology ◽  
Hydrogen Detection ◽  
Current Voltage ◽  
Single Electron Tunneling

The fast growth of hydrogen usage as a clean fuel in civil applications such as transportation, space technology, etc. highlights the importance of the reliable detection of its leakage and accumulation under explosion limit by sensors with a low power consumption at times when there is no accumulation of hydrogen in the environment. In this research, a new and efficient mechanism is presented for hydrogen detection—using the Coulomb blockade effect in a well-arranged 2D array of palladium nano-islands—which can operate at room temperature. We demonstrated that under certain conditions of size distribution and the regularity of palladium nano-islands, with selected sizes of 1.7, 3 and 6.1 nm, the blockade threshold will appear in current-voltage (IV) characteristics. In reality, it will be achieved by the inherent uncertainty in the size of the islands in nano-scale fabrication or by controlling the size of nanoparticles from 1.7 to 6.1 nm, considering a regular arrangement of nanoparticles that satisfies single-electron tunneling requirements. Based on the simulation results, the threshold voltage is shifted towards lower ones due to the expansion of Pd nanoparticles exposed to the environment with hydrogen concentrations lower than 2.6%. Also, exploring the features of the presented structure as a gas sensor, provides robustness against the Gaussian variation in nano-islands sizes and temperature variations. Remarkably, the existence of the threshold voltage in the IV curve and adjusting the bias voltage below this threshold leads to a drastic reduction in power consumption. There is also an improvement in the minimum detectable hydrogen concentration as well as the sensor response.

Quantum Current Modelling of Single Electron Transistors with N Potential Barrier

2019 ◽  
Vol 11 (12) ◽  
pp. 1261-1265
Author(s):  
Seyed Norollah Hedayat ◽  
Seyedeh Sahar Hedayat
Keyword(s):  
Electron Tunneling ◽  
Structural Parameters ◽  
Single Electron ◽  
Tunneling Effect ◽  
Single Electron Transistor ◽  
Single Electron Transistors ◽  
Current Voltage ◽  
Single Electron Tunneling ◽  
Quantum Current ◽  
New Type

The single electron transistor is a new type of switching device that uses controlled electron tunneling to amplify current. In this paper, we focus on some basic device characteristics like, single electron tunneling effect on which this single electron transistor works. In this research, transmission coefficient model of a single electron transistor with quantum dot arrays constraints is checked. Then, the current of the transistor is modeled on quantum dots. Finally, current–voltage characteristic based on quantum transport and structural parameters are analyzed.

Fabrication and Characterization of Single Electron Tunneling Device on Au/SiO2 Nanocomposite Films

2013 ◽  
Vol 13 (2) ◽  
pp. 878-882
Author(s):  
Jingyue Fang ◽  
Shiqiao Qin ◽  
Xueao Zhang ◽  
Jiandong Sun ◽  
Jiadong Li ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Single Electron ◽  
Nanocomposite Films ◽  
Single Electron Tunneling ◽  
Fabrication And Characterization

Sensing of dynamic charge states using single-electron tunneling transistors

1998 ◽  
Vol 168 (2) ◽  
pp. 219
Author(s):  
V.A. Krupenin ◽  
S.V. Lotkhov ◽  
H. Scherer ◽  
A.B. Zorin ◽  
F.-J. Ahlers ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Tunneling ◽  
Dynamic Charge ◽  
Charge States

Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film

2001 ◽  
Vol 90 (7) ◽  
pp. 3551-3557 ◽  
Author(s):  
Ken Uchida ◽  
Junji Koga ◽  
Ryuji Ohba ◽  
Shin-ichi Takagi ◽  
Akira Toriumi
Keyword(s):  
Electron Tunneling ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Insulator Film ◽  
Single Electron Tunneling

Stm Studies at Electrochemically Controlled Interfaces

1994 ◽  
Vol 332 ◽  
Author(s):  
S.M. Lindsay ◽  
J. Pan ◽  
T.W. Jing
Keyword(s):  
Electron Tunneling ◽  
Point Contact ◽  
Localized States ◽  
Scanning Tunneling ◽  
Zero Field ◽  
Tunneling Microscopy ◽  
Dna Oligomers ◽  
Synthetic Dna ◽  
Quantum Point

ABSTRACTWe use electrochemical methods to control the adsorption of molecules onto an electrode for imaging in-situ by scanning tunneling microscopy. Measurements of the barrier for electron tunneling show that the mechanism of electron transfer differs from vacuum tunneling. Barriers depend upon the direction of electron tunneling, indicating the presence of permanently aligned dipoles in the tunnel gap. We attribute a sharp dip in the barrier near zero field to induced polarization. We propose a ‘tunneling’ process consisting of two parts: One is delocalization of quantum-coherent states in parts of the molecular adlayer that hybridize strongly (interaction ≥ kT) with Bloch states in the metal. This gives rise to a quantum-point-contact conductance, Gc ≤ 2e2/h at a height zo. The other part comes from the exponential decay of the tails of localized states, G = Gc exp{−2K(z − z0)}. Because measured decay lengths, (2K‘)−1, are small (≈ 1 Å), STM contrast is dominated by the contour along which G[z0 (x,y)] = Gc. Measured changes in z0 are used to calculate images which are in reasonable agreement with observations. We illustrate this with images of synthetic DNA oligomers.

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