Scattering, Quantum Current, and Resonant Tunneling

Having examined free particles and particles that are confined in space by a potential energy term, we now consider the impact of a disturbance in the flat energy landscape for a free particle. By disturbance we means some kind of fixed “obstacle” which is either a positive (repelling) or negative (attractive) potential. We are interested in determining the impact on the free particle. Continuing to work mostly in one dimension, the particle described by a plane wave corresponding to momentum moving in the positive direction (a positive k−vector in the x−direction), we study elastic scattering. In one dimension, this means that we determine the probability that the particle is transmitted (continuing in the forward direction) or reflected (now moving in the backward direction.) We will also determine the nature of the solution inside the potential and in the case that the potential energy maximum is greater than the kinetic energy of the particle, we will show that the particle tunnels through the barrier. Interestingly, when we have two barriers, we can find conditions where the probability that the particle is transmitted is unity. This is the result of resonance, a feature of the wave-like nature of the particle’s wave function.

Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source

Nanoscale metal-oxide-semiconductor field-effect-transistors (MOSFETs) with only one defect at the interface can potentially become a single electron turnstile linking frequency and electronic charge to realize the elusive quantized current source. Charge pumping is often described as a process that ‘pumps’ one charge per driving period per defect. The precision needed to utilize this charge pumping mechanism as a quantized current source requires a rigorous demonstration of the basic charge pumping mechanism. Here we present experimental results on a single-defect MOSFET that shows that the one charge pumped per cycle mechanism is valid. This validity is also discussed through a variety of physical arguments that enrich the current understanding of charge pumping. The known sources of errors as well as potential sources of error are also discussed. The precision of such a process is sufficient to encourage further exploration of charge pumping based on quantum current sources.

Quantum Current Modelling of Single Electron Transistors with N Potential Barrier

The single electron transistor is a new type of switching device that uses controlled electron tunneling to amplify current. In this paper, we focus on some basic device characteristics like, single electron tunneling effect on which this single electron transistor works. In this research, transmission coefficient model of a single electron transistor with quantum dot arrays constraints is checked. Then, the current of the transistor is modeled on quantum dots. Finally, current–voltage characteristic based on quantum transport and structural parameters are analyzed.

Quantum Current Algebra Symmetries and Integrable Many-Particle Schrödinger Type Quantum Hamiltonian Operators

Based on the G. Goldin’s quantum current algebra symmetry representation theory, have succeeded in explaining a hidden relationship between the quantum many-particle Hamiltonian operators, defined in the Fock space, their factorized structure and integrability. Interesting for applications quantum oscillatory Hamiltonian operators are considered, the quantum symmetries of the integrable quantum Calogero-Sutherland model are analyzed in detail.