NANOSCALE ARRAYS IN LITHIUM NIOBATE FABRICATED BY INTERFERENCE LITHOGRAPHY AND DRY ETCHING

2010 ◽  
Vol 09 (04) ◽  
pp. 311-315
Author(s):  
G. Y. SI ◽  
A. J. DANNER ◽  
J. H. TENG ◽  
S. S. ANG ◽  
A. B. CHEW ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Inductively Coupled Plasma ◽  
Optical Constants ◽  
Etching Rate ◽  
Proton Exchange ◽  
Interference Lithography ◽  
Etching Depth ◽  
Inductively Coupled ◽  
Channel Waveguides ◽  
Total Etching

Channel waveguides have been fabricated in x-cut lithium niobate (LiNbO3) by proton exchange (PE) method and optically measured. The thickness and the optical constants of the thin PE layer were characterized using a prism coupling technique. The PE area was plasma etched and a 2.775-μm total etching depth was achieved. The measured average etching rate is 92.5 nm/min. One- and two-dimensional dense arrays of LiNbO3 nanostructures have also been fabricated by using interference lithography (IL) and inductively coupled plasma reactive ion etching (ICP-RIE) techniques.

Interference Lithography Patterned Nanogratings in LiNbO3 Fabricated by Dry Etching

2014 ◽  
Vol 1049-1050 ◽  
pp. 7-10
Author(s):  
Qiong Chan Gu ◽  
Xiao Xiao Jiang ◽  
Jiang Tao Lv ◽  
Guang Yuan Si
Keyword(s):  
Inductively Coupled Plasma ◽  
Optical Constants ◽  
Etching Rate ◽  
Proton Exchange ◽  
Interference Lithography ◽  
Etching Depth ◽  
Coupling Technique ◽  
Inductively Coupled ◽  
Channel Waveguides ◽  
Total Etching

Channel waveguides have been fabricated in x-cut lithium niobate (LiNbO3) by proton exchange (PE) method and optically measured. The thickness and the optical constants of the thin PE layer were characterized using a prism coupling technique. The PE area was plasma etched and a 2.775-μm total etching depth was achieved. The measured average etching rate is 92.5 nm/min. One-and two-dimensional dense arrays of LiNbO3 nanostructures have also been fabricated by using interference lithography (IL) and inductively coupled plasma reactive ion etching (ICP-RIE) techniques.Intorduction

Manufacture of High Aspect Ratio Bulk Titanium Micro-Parts by Inductively Coupled Plasma Etching

2008 ◽  
Author(s):  
Gang Zhao ◽  
Qiong Shu ◽  
Yue Li ◽  
Jing Chen
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Sidewall Roughness ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Novel Technology ◽  
Micro Parts ◽  
Etching Mask

A novel technology is developed to fabricate high aspect ratio bulk titanium micro-parts by inductively coupled plasma (ICP) etching. An optimized etching rate of 0.9 μm/min has been achieved with an aspect ratio higher than 10:1. For the first time, SU-8 is used as titanium etching mask instead of the traditional hard mask such as TiO2 or SiO2. With an effective selectivity of 3 and a spun-on thickness beyond 100 μm, vertical etching sidewall and low sidewall roughness are obtained. Ultra-deep titanium etching up to 200 μm has been realized, which is among the best of the present reports. Titanium micro-springs and planks are successfully fabricated with this approach.

Fabrication and Characterisation of Reverse Proton Exchange Optical Waveguides in Neodymium Doped Lithium Niobate Crystals

2005 ◽  
Vol 480-481 ◽  
pp. 429-436
Author(s):  
M. Domenech ◽  
G. Lifante ◽  
F. Cussó ◽  
A. Parisi ◽  
A.C. Cino ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Optical Waveguides ◽  
Spectroscopic Properties ◽  
Proton Exchange ◽  
Fabrication Process ◽  
The Other ◽  
Ion Plating ◽  
Other Hand ◽  
Channel Waveguides ◽  
Lithium Niobate Crystals

In this work, the complete fabrication process which combines Proton Exchange (PE) and Reverse Proton Exchange (RPE) in Neodymium doped LiNbO3 channel waveguides is reported. To produce the PE-RPE channel waveguides the fabrication of dielectric SiO2 masks had to be implemented. For this propose, we adopted a technique based on the Ion Plating Plasma Assisted Deposition of SiO2 followed by the standard ultraviolet photolithographic patterning. On the other hand, we determined the main optical and spectroscopic properties of Nd3+ ions in the channel waveguides including the study of the lifetime as function as the polarisation.

Investigating GaSb(001) Dry Etching by ICP-RIE on a non-Silicon Containing Sample Holder with no Organic Gases

2012 ◽  
Vol 1396 ◽  
Author(s):  
Hamad A. Albrithen ◽  
Gale S. Petrich ◽  
Leslie A. Kolodziejski ◽  
Abdelmajid Salhi ◽  
Abdulrahman A. Almuhanna
Keyword(s):  
Inductively Coupled Plasma ◽  
Silicon Oxide ◽  
Etching Rate ◽  
Sample Holder ◽  
Inductively Coupled ◽  
Solid Films ◽  
Mask Layer ◽  
Organic Gases ◽  
Dry Etch ◽  
Anisotropic Etch

ABSTRACTWe report the dry etch of GaSb(001) by inductively coupled plasma reactive ion etcher. Silicon Oxide, deposited by PECVD, was used as a mask. The oxide layer proved to be almost unaffected compared to the GaSb, when using chlorine compound gases as etchants (Cl2, BCl3, and SiCl4) as well as argon. This provides high selectivity for GaSb to the mask layer. The sample holder has no silicon that may contribute to the etching process. Etching using Cl2 + Ar showed increase in the etching rate as the chlorine ratio increases; however, the process led to grassy surface and chemical like reaction. The use of SiCl4+Cl2+Ar mixture with low chlorine ratio resulted in anisotropic etch with smooth sides. It has been found for this case that the increase of the chlorine ratio led to an increased etching rate as well. The repeat of previously reported result by Swaminathan et al. [Thin Solid Films 516 (2008) 8712.] yet with a sample holder not having silicon, proved the effect of Si-contribution in producing vertical profile etch with smooth surfaces.

scholarly journals A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 123
Author(s):  
Katarzyna Racka-Szmidt ◽  
Bartłomiej Stonio ◽  
Jarosław Żelazko ◽  
Maciej Filipiak ◽  
Mariusz Sochacki
Keyword(s):  
Silicon Carbide ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Reactive Ion Etching ◽  
Semiconductor Processing ◽  
Ion Etching ◽  
Inductively Coupled ◽  
Hard Materials ◽  
Potential Benefits ◽  
First Time

The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures, and tilted sidewalls with a controlled angle. The ICP-RIE method combining a high finishing accuracy and reproducibility is excellent for etching hard materials, such as SiC, GaN or diamond. The paper presents a review of silicon carbide etching—principles of the ICP-RIE method, the results of SiC etching and undesired phenomena of the ICP-RIE process are presented. The article includes SEM photos and experimental results obtained from different ICP-RIE processes. The influence of O2 addition to the SF6 plasma as well as the change of both RIE and ICP power on the etching rate of the Cr mask used in processes and on the selectivity of SiC/Cr etching are reported for the first time. SiC is an attractive semiconductor with many excellent properties, that can bring huge potential benefits thorough advances in submicron semiconductor processing technology. Recently, there has been an interest in SiC due to its potential wide application in power electronics, in particular in automotive, renewable energy and rail transport.

scholarly journals Reflectometry Study of the Pyroelectric Effect on Proton-Exchange Channel Waveguides in Lithium Niobate

2021 ◽  
Vol 11 (21) ◽  
pp. 9853
Author(s):  
Roman Ponomarev ◽  
Yuri Konstantinov ◽  
Maxim Belokrylov ◽  
Ivan Lobach ◽  
Denis Shevtsov
Keyword(s):  
Lithium Niobate ◽  
Optical Waveguides ◽  
Lithium Niobate Crystal ◽  
Proton Exchange ◽  
Optical Losses ◽  
Pyroelectric Effect ◽  
Optical Frequency Domain Reflectometry ◽  
Exchange Channel ◽  
Frequency Domain Reflectometry ◽  
Channel Waveguides

This work is devoted to the study of the pyroelectric effect on the properties of optical waveguides formed in a lithium niobate crystal by proton exchange. In the present work, we studied the cessation effect of the radiation channeling during thermocycling of Y-splitters samples. We examined the spectral dependence of optical losses on the wavelength using an optical spectrum analyzer. The results demonstrate that in the range of 1530–1570 nm, all wavelengths are suppressed equally. The optical frequency domain reflectometry shows that the increase of optical losses is observed along the entire waveguide, but not only at the Y-splitting point, as supposed earlier.

scholarly journals “Shutdown” of the Proton Exchange Channel Waveguide in the Phase Modulator under the Influence of the Pyroelectric Effect

2019 ◽  
Vol 9 (21) ◽  
pp. 4585
Author(s):  
Roman Sergeevitch Ponomarev ◽  
Denis Igorevitch Shevtsov ◽  
Pavel Victorovitch Karnaushkin
Keyword(s):  
Lithium Niobate ◽  
Integrated Circuit ◽  
Lithium Niobate Crystal ◽  
Rapid Heating ◽  
Proton Exchange ◽  
Navigation Systems ◽  
Radiation Mode ◽  
Exchange Channel ◽  
Channel Waveguides ◽  
Fundamental Radiation

It is shown that the termination of the channeling of the fundamental radiation mode in the waveguide can be observed upon heating of an optical integrated circuit based on proton exchange channel waveguides formed in a lithium niobate single crystal. This process is reversible, but restoration of waveguide performance takes tens of minutes. The effect of the waveguide disappearance is observed upon rapid heating (5 K/min) from a low temperature (minus 40 °C). This effect can lead to a temporary failure of navigation systems using fiber optic gyroscopes with modulators based on a lithium niobate crystal.

The morphologies and optical properties of three-dimensional GaN nano-cone arrays

RSC Advances ◽  
2016 ◽  
Vol 6 (49) ◽  
pp. 43272-43277 ◽  
Author(s):  
Haotian Wang ◽  
Guangmei Zhai ◽  
Lin Shang ◽  
Shufang Ma ◽  
Wei Jia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Three Dimensional ◽  
Interference Lithography ◽  
Laser Interference Lithography ◽  
Laser Interference ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled

Three-dimensional GaN nanostructures with well-aligned nano-cones were fabricated via laser interference lithography + inductively coupled plasma etching techniques.

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