SIMPLE AND CATALYST-FREE SYNTHESIS OF SILICON OXIDE NANOWIRES AND NANOCOILS

In this paper, a simple method for synthesizing SiO x nanowires and nanocoils is presented. Si substrates with an oxide layer were placed in a tube furnace exposed to temperatures ranging from 900°C to 1200°C for a few hours under a mixture of flowing Ar and H2 gas maintained at ambient pressure. Nanowires were grown from the surface when the furnace temperature was above 1000°C and a high yield could be achieved at 1100°C. SiO x nanocoils have also been observed and the sample treated at 1000°C had the highest concentration of them. TEM images show that the nanowires and the nanocoils have an amorphous structure and analysis of EDX spectra (obtained in the TEM) shows that x varies from 1.2 to 2.0. The mechanism of growth is discussed.

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Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

Nanomaterials ◽

10.3390/nano11081949 ◽

2021 ◽

Vol 11 (8) ◽

pp. 1949

Author(s):

Vladimir V. Fedorov ◽

Yury Berdnikov ◽

Nickolay V. Sibirev ◽

Alexey D. Bolshakov ◽

Sergey V. Fedina ◽

...

Keyword(s):

Gallium Phosphide ◽

Silicon Oxide ◽

Electronic Devices ◽

High Yield ◽

Silicon Oxide Layer ◽

Si Substrates ◽

Template Free ◽

And Control ◽

Vertical Gap ◽

Comprehensive Study

Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in single- or two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.

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Interfacial Structure and Electrical Characteristics of LaNiO3/Si Contacts

Journal of Materials Research ◽

10.1557/jmr.2002.0201 ◽

2002 ◽

Vol 17 (6) ◽

pp. 1350-1355 ◽

Cited By ~ 6

Author(s):

Tai-Bor Wu ◽

Chin-Lin Liu ◽

Yu-Wen Liu

Keyword(s):

Oxide Layer ◽

Barrier Height ◽

Silicon Oxide ◽

Ion Beam ◽

Linear Part ◽

Rf Magnetron Sputtering ◽

Interfacial Structure ◽

Silicon Oxide Layer ◽

Si Substrates ◽

Clean Interface

The LaNiO3 (LNO) thin films were deposited on Si substrate by rf magnetron sputtering. The interface and electrical properties of LNO/Si contacts were investigated. For the deposition at room temperature, an amorphous LNO film with a clean interface was formed on the Si. However, a thin silicon oxide layer of approximately 2.5 nm was formed at the interface between LNO and Si after rapid thermal annealing (RTA) at temperatures ≥450 °C. On the other hand, a highly (100)-textured LNO film along with an interfacial oxide layer of approximately 6.0 nm was obtained for the deposition at 400–450 °C. Nevertheless, if an ion beam etching was applied prior to the high temperature deposition at 400–450 °C, a clean interface at the interface could be obtained for the LNO/Si contacts. Moreover, crystallites with (111) planes grown epitaxially along the (111) planes of Si were found in the LNO films. All the contacts had shown good current–voltage characteristics of a Schottky diode with a barrier height of 0.69–0.78 eV for the LNO/n-Si contacts and 0.60–0.67 eV for the LNO/p-Si contacts, and the barrier height increased with the thickening of interfacial oxide layer. From the measurement of capacitance (C) under reverse bias (Vr) of the contacts made with LNO deposited on the ion-etched Si substrates, a linear relation was observed in the plot of C−2 against Vr except a deviation of linearity in the low-bias part of the curve. This deviation is most likely due to the segregation and inward diffusion of La and Ni near the interface of LNO/Si contacts. Nevertheless, the barrier heights evaluated from an extrapolation of linear part of the plots are reasonably consistent with those obtained from the I–V measurement.

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An investigation on physical properties of SiOx nanowires deposited by chemical vapor deposition method: The effect of substrate to boat distance

Modern Physics Letters B ◽

10.1142/s021798491750227x ◽

2017 ◽

Vol 31 (25) ◽

pp. 1750227

Author(s):

Narges Heidaryan ◽

Hosein Eshghi

Keyword(s):

Physical Properties ◽

Large Scale ◽

Silicon Oxide ◽

Chemical Vapor ◽

Silicon Monoxide ◽

Chemical Vapor Deposition Method ◽

Sem Images ◽

Oxide Nanowires ◽

Si Substrates ◽

Xrd Patterns

Large-scale silicon oxide nanowires (SiO[Formula: see text] NWs) with a diameter about 250 nm on silicon wafers were synthesized by thermal evaporation of silicon monoxide (SiO) powder. In order to investigate the role of distance on the physical properties of SiO[Formula: see text] NWs, Si substrates were positioned at 5 cm and 10 cm apart from the boat position set at 1150[Formula: see text]C. The local temperatues of the samples were 1100[Formula: see text]C and 1050[Formula: see text]C, respectively. The SEM images and EDS spectra showed interweaved networks of SiO[Formula: see text] NWs with x = 0.62 and 0.65 in these layers. The XRD patterns showed S1 has a polycrystalline structure (cristobalite), while S2 has amorphous nature. The PL spectra showed an intense blue peak at 468 nm in S1, and a violet peak at 427 nm in S2 that could be related to the differences in the crystallite structures and oxygen vacancies in these samples.

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Formation of silicon oxide nanowires directly from Au/Si and Pd–Au/Si substrates

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2006.08.003 ◽

2007 ◽

Vol 37 (1-2) ◽

pp. 158-162 ◽

Cited By ~ 25

Author(s):

Hyun-Kyu Park ◽

Beelyong Yang ◽

Sang-Woo Kim ◽

Gil-Ho Kim ◽

Doo-Hyeb Youn ◽

...

Keyword(s):

Silicon Oxide ◽

Oxide Nanowires ◽

Si Substrates

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Preparation of Amorphous Silicon Oxide Nanowires by the Thermal Heating of Ni or Au-Coated Si Substrates

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.110-116.1087 ◽

2011 ◽

Vol 110-116 ◽

pp. 1087-1093 ◽

Cited By ~ 1

Author(s):

Jong Keun Ha ◽

Kwon Koo Cho

Keyword(s):

Buffer Layer ◽

Silicon Oxide ◽

Thermal Evaporation ◽

Sol Gel ◽

Chemical Vapor ◽

Synthesis Temperature ◽

Heating Process ◽

Thermal Heating ◽

Oxide Nanowires ◽

Si Substrates

Silicon oxide (SiOx) nanowires may have many applications due to their electrical, mechanical and optical properties. Many methods have been reported for the synthesis of SiOx nanowires, including laser ablation, sol–gel, thermal evaporation, carbothermal reduction, physical evaporation, rapid thermal annealing, chemical vapor deposition and thermal oxidation route, oxide assisted growth and thermal sublimation. In this paper, we reported SiOx nanowires fabricated by simple thermal heating process of catalyst thin film-coated Si substrates with various parameters, such as synthesis temperature, synthesis gases, catalysts, and buffer layer (SiO2layer). Synthesized silicon oxide nanowires were amorphous crystalline. The best synthesis condition of prepared SiOx nanowire is slightly varied with catalysts and buffer layer. The flow rate of synthesis gas affected diameter of silicon oxide nanowires.

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Growth Characteristics of Amorphous Silicon Oxide Nanowires Synthesized via Annealing of Ni/SiO2/Si Substrates

Bulletin of the Korean Chemical Society ◽

10.5012/bkcs.2011.32.12.4371 ◽

2011 ◽

Vol 32 (12) ◽

pp. 4371-4376

Author(s):

Kwon-Koo Cho ◽

Jong-Keun Ha ◽

Ki-Won Kim ◽

Kwang-Sun Ryu ◽

Hye-Sung Kim

Keyword(s):

Amorphous Silicon ◽

Silicon Oxide ◽

Growth Characteristics ◽

Oxide Nanowires ◽

Si Substrates ◽

Amorphous Silicon Oxide

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Microwave-Assisted Combustion Synthesis of ZnO Nanoparticles

Journal of Chemistry ◽

10.1155/2013/562028 ◽

2013 ◽

Vol 2013 ◽

pp. 1-4 ◽

Cited By ~ 34

Author(s):

M. Kooti ◽

A. Naghdi Sedeh

Keyword(s):

Electron Microscopy ◽

Zno Nanoparticles ◽

Combustion Method ◽

Zinc Nitrate ◽

High Yield ◽

Fast Method ◽

Simple Method ◽

X Ray ◽

Microwave Assisted ◽

Average Size

A new and simple method was applied for the synthesis of ZnO nanoparticles with an average size of 20 nm. In this microwave-assisted combustion method, glycine as a fuel and zinc nitrate as precursor were used. The final product was obtained very fast with high yield and purity. The synthesized nanoscale ZnO was characterized by X-ray Diffraction (XRD), Energy Dispersive X-ray spectroscopy (EDX), and Fourier transform infrared spectroscopy (FT-IR). The size and morphology of the ZnO nanoparticles have been determined by field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) techniques. This is a simple and fast method for the preparation of ZnO nanoparticles with no need for expensive materials or complicated treatments.

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