Fabrication and Field-Emission Properties of Vertically-Aligned Tapered [110]Si Nanowire Arrays Prepared by Nanosphere Lithography and Electroless Ag-Catalyzed Etching

In this study, the controllable fabrication of a variety of vertically aligned, single-crystalline [110]-oriented Si nanowire arrays with sharp tips on (110)Si substrates is achieved using a combined self-assembled nanosphere lithography and multiple electroless Ag-catalyzed Si etching processes. All of the experiments were performed at room temperature. The morphological evolution and formation mechanism of long tapered [110]Si nanowire arrays during the multiple tip-sharpening cycle processes have been investigated by scanning electron microscopy, transmission electron microscopy and water contact angle measurements. Field emission measurements demonstrate that the field-emission behaviors of all nanowire samples produced in this study agree well with the Fowler–Nordheim theory, and the produced long tapered [110]Si nanowire array possesses superior electron emission characteristics, with a very low turn-on field of 1.4[Formula: see text]V/[Formula: see text]m and a high field enhancement factor of 3816. The simple and room temperature fabrication of the well-ordered long tapered [110]Si nanowire array and its excellent electron field emission performance suggest that it can serve as a good candidate for applications in high-performance Si-based vacuum electronic nanodevices.

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Influence of Chemical Modification on the Electrical Properties of Si Nanowire Arrays

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.160-162.1331 ◽

2010 ◽

Vol 160-162 ◽

pp. 1331-1335 ◽

Cited By ~ 1

Author(s):

Chuan Bo Li ◽

Kristel Fobelets ◽

S.N. Syed Jalal ◽

Wei A. Ng ◽

Zahid A.K. Durrani

Keyword(s):

Electrical Conductivity ◽

Electrical Property ◽

Electrical Properties ◽

Chemical Modification ◽

Nanowire Array ◽

Noise Measurement ◽

Nanowire Arrays ◽

Interface Traps ◽

Si Nanowire ◽

Si Nanowire Array

The influence of the chemical modification on the electrical property of Si nanowire array was studied. It is found that H-terminated Si nanowire has a better electrical conductivity while OH-passivation could increase their resistance. It is believed that the introducing of OH group on the surface nanowire increases the interface traps and it is confirmed by our 1/f noise measurement.

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Vertically Aligned Si Nanowire Array—A Promising Anode Material for Li-Ion Battery

Energy and Environment Focus ◽

10.1166/eef.2017.1234 ◽

2017 ◽

Vol 6 (1) ◽

pp. 83-87

Author(s):

Sovan Kumar Panda ◽

Hyunjung Shin

Keyword(s):

Anode Material ◽

Nanowire Array ◽

Li Ion Battery ◽

Si Nanowire ◽

Si Nanowire Array ◽

Vertically Aligned ◽

Li Ion

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Massive transfer of vertically aligned Si nanowire array onto alien substrates and their characteristics

Applied Surface Science ◽

10.1016/j.apsusc.2009.06.021 ◽

2009 ◽

Vol 255 (20) ◽

pp. 8566-8570 ◽

Cited By ~ 23

Author(s):

Shu-Chia Shiu ◽

Shih-Che Hung ◽

Jiun-Jie Chao ◽

Ching-Fuh Lin

Keyword(s):

Nanowire Array ◽

Si Nanowire ◽

Si Nanowire Array ◽

Vertically Aligned

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Thermal Evaporation Synthesis of Vertically Aligned Zn2SnO4/ZnO Radial Heterostructured Nanowire Arrays

10.20944/preprints202104.0718.v1 ◽

2021 ◽

Author(s):

Gill Sang Han ◽

Min Je Kang ◽

Yoo Jae Jeong ◽

Sangwook Lee ◽

In Sun Cho

Keyword(s):

Electron Microscopy ◽

Charge Transport ◽

Transport Properties ◽

Powder Mixture ◽

Thermal Evaporation ◽

Nanowire Array ◽

Nanowire Arrays ◽

Zno Nanowire ◽

Post Annealing ◽

Vertically Aligned

Abstract The construction of a heterostructured nanowire array allows the manipulation of the interfacial, surface, charge transport, and transfer properties simultaneously, offering new opportunities to achieve multi-functionality for various applications. Herein, we developed a facile thermal evaporation and post-annealing method to synthesize ternary-Zn2SnO4/binary-ZnO radially heterostructured nanowire arrays (HNA). Vertically aligned ZnO nanowire arrays (3.5 μm in length) were grown on a ZnO-nanoparticle-seeded fluorine-doped tin oxide substrate by a hydrothermal method. Subsequently, the amorphous layer consisting of Zn-Sn-O complex was uniformly deposited on the surface of the ZnO nanowires via the thermal evaporation of the Zn and Sn powder mixture in vacuum, followed by post-annealing at 550 °C in air to oxidize and crystallize the Zn2SnO4 shell layer. The use of a powder mixture composed of elemental Zn and Sn (rather than oxides and carbon mixture) as an evaporation source ensures high vapor pressure at a low temperature (e.g., 700 °C) during thermal evaporation. The morphology, microstructure, and charge-transport properties of the Zn2SnO4/ZnO HNA were investigated by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and electrochemical impedance spectroscopy. Notably, the optimally synthesized Zn2SnO4/ZnO HNA shows an intimate interface, high surface roughness, and superior charge-separation and -transport properties compared with the pristine ZnO nanowire array.

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Vertically aligned tin-doped indium oxide nanowire arrays: Epitaxial growth and electron field emission properties

Applied Physics Letters ◽

10.1063/1.2345278 ◽

2006 ◽

Vol 89 (12) ◽

pp. 123102 ◽

Cited By ~ 55

Author(s):

Q. Wan ◽

P. Feng ◽

T. H. Wang

Keyword(s):

Epitaxial Growth ◽

Field Emission ◽

Indium Oxide ◽

Nanowire Arrays ◽

Electron Field Emission ◽

Emission Properties ◽

Field Emission Properties ◽

Electron Field ◽

Vertically Aligned ◽

Electron Field Emission Properties

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Synthesis of Self-Supporting ZnO Nanowire Array Film and its Optical Property and Room Temperature Ferromagnetism

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1036.45 ◽

2021 ◽

Vol 1036 ◽

pp. 45-52

Author(s):

Jiao Yang ◽

Xin Yu Wang ◽

Peng Kai Li ◽

Ji Fa Huang ◽

Peng Hao Deng

Keyword(s):

Exposure Time ◽

Room Temperature ◽

Surface Defects ◽

Room Temperature Ferromagnetism ◽

Nanowire Array ◽

Nanowire Arrays ◽

Zno Nanowire ◽

Vertical Orientation ◽

Vibration Sample Magnetometer ◽

The Relationship

X-ray diffractometer, field emission scanning electron microscope (SEM, Hitachi S-4800), laser confocal micro-region Raman spectrometer and vibration sample magnetometer were used to systematically study the effects of polyethyleneimine concentrations and exposure time on the morphology and size of ZnO nanowire arrays. The photoelectric property and the relationship between the morphology of nanowire arrays and ferromagnetism at room temperature were also analyzed. Under 15 min exposure time, when the polyethyleneimine concentration is 2.25 g / L, the obtained ZnO nanowire array film exhibits the smallest size, the optimal density and vertical orientation. According to the study of luminescence and room temperature magnetism, it is shown that the optical and ferromagnetic property are related to the variation tendency of oxygen defects and surface defects of the ZnO nanowires.

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