scholarly journals Thermal Evaporation Synthesis of Vertically Aligned Zn2SnO4/ZnO Radial Heterostructured Nanowire Arrays

2021 ◽  
Author(s):  
Gill Sang Han ◽  
Min Je Kang ◽  
Yoo Jae Jeong ◽  
Sangwook Lee ◽  
In Sun Cho
Keyword(s):  
Electron Microscopy ◽  
Charge Transport ◽  
Transport Properties ◽  
Powder Mixture ◽  
Thermal Evaporation ◽  
Nanowire Array ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Post Annealing ◽  
Vertically Aligned

Abstract The construction of a heterostructured nanowire array allows the manipulation of the interfacial, surface, charge transport, and transfer properties simultaneously, offering new opportunities to achieve multi-functionality for various applications. Herein, we developed a facile thermal evaporation and post-annealing method to synthesize ternary-Zn2SnO4/binary-ZnO radially heterostructured nanowire arrays (HNA). Vertically aligned ZnO nanowire arrays (3.5 μm in length) were grown on a ZnO-nanoparticle-seeded fluorine-doped tin oxide substrate by a hydrothermal method. Subsequently, the amorphous layer consisting of Zn-Sn-O complex was uniformly deposited on the surface of the ZnO nanowires via the thermal evaporation of the Zn and Sn powder mixture in vacuum, followed by post-annealing at 550 °C in air to oxidize and crystallize the Zn2SnO4 shell layer. The use of a powder mixture composed of elemental Zn and Sn (rather than oxides and carbon mixture) as an evaporation source ensures high vapor pressure at a low temperature (e.g., 700 °C) during thermal evaporation. The morphology, microstructure, and charge-transport properties of the Zn2SnO4/ZnO HNA were investigated by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and electrochemical impedance spectroscopy. Notably, the optimally synthesized Zn2SnO4/ZnO HNA shows an intimate interface, high surface roughness, and superior charge-separation and -transport properties compared with the pristine ZnO nanowire array.

scholarly journals Thermal Evaporation Synthesis of Vertically Aligned Zn2SnO4/ZnO Radial Heterostructured Nanowires Array

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1500
Author(s):  
Gillsang Han ◽  
Minje Kang ◽  
Yoojae Jeong ◽  
Sangwook Lee ◽  
Insun Cho
Keyword(s):  
Electron Microscopy ◽  
Charge Transport ◽  
Transport Properties ◽  
Powder Mixture ◽  
Thermal Evaporation ◽  
Zno Nanowires ◽  
Zno Nanoparticle ◽  
Post Annealing ◽  
Vertically Aligned ◽  
Nanowires Array

The construction of a heterostructured nanowires array allows the simultaneous manipulation of the interfacial, surface, charge transport, and transfer properties, offering new opportunities to achieve multi-functionality for various applications. Herein, we developed facile thermal evaporation and post-annealing method to synthesize ternary-Zn2SnO4/binary-ZnO radially heterostructured nanowires array (HNA). Vertically aligned ZnO nanowires array (3.5 μm in length) were grown on a ZnO-nanoparticle-seeded, fluorine-doped tin oxide substrate by a hydrothermal method. Subsequently, the amorphous layer consisting of Zn-Sn-O complex was uniformly deposited on the surface of the ZnO nanowires via the thermal evaporation of the Zn and Sn powder mixture in vacuum, followed by post-annealing at 550 °C in air to oxidize and crystallize the Zn2SnO4 shell layer. The use of a powder mixture composed of elemental Zn and Sn (rather than oxides and carbon mixture) as an evaporation source ensures high vapor pressure at a low temperature (e.g., 700 °C) during thermal evaporation. The morphology, microstructure, and charge-transport properties of the Zn2SnO4/ZnO HNA were investigated by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and electrochemical impedance spectroscopy. Notably, the optimally synthesized Zn2SnO4/ZnO HNA shows an intimate interface, high surface roughness, and superior charge-separation and -transport properties compared with the pristine ZnO nanowires array.

Fabrication and Field-Emission Properties of Vertically-Aligned Tapered [110]Si Nanowire Arrays Prepared by Nanosphere Lithography and Electroless Ag-Catalyzed Etching

NANO ◽  
2018 ◽  
Vol 13 (09) ◽  
pp. 1850108 ◽  
Author(s):  
Z. Feng ◽  
K. Q. Lin ◽  
Y. C. Chen ◽  
S. L. Cheng
Keyword(s):  
Electron Microscopy ◽  
Field Emission ◽  
Room Temperature ◽  
Morphological Evolution ◽  
Nanowire Array ◽  
Nanosphere Lithography ◽  
Nanowire Arrays ◽  
Si Nanowire ◽  
Si Nanowire Array ◽  
Vertically Aligned

In this study, the controllable fabrication of a variety of vertically aligned, single-crystalline [110]-oriented Si nanowire arrays with sharp tips on (110)Si substrates is achieved using a combined self-assembled nanosphere lithography and multiple electroless Ag-catalyzed Si etching processes. All of the experiments were performed at room temperature. The morphological evolution and formation mechanism of long tapered [110]Si nanowire arrays during the multiple tip-sharpening cycle processes have been investigated by scanning electron microscopy, transmission electron microscopy and water contact angle measurements. Field emission measurements demonstrate that the field-emission behaviors of all nanowire samples produced in this study agree well with the Fowler–Nordheim theory, and the produced long tapered [110]Si nanowire array possesses superior electron emission characteristics, with a very low turn-on field of 1.4[Formula: see text]V/[Formula: see text]m and a high field enhancement factor of 3816. The simple and room temperature fabrication of the well-ordered long tapered [110]Si nanowire array and its excellent electron field emission performance suggest that it can serve as a good candidate for applications in high-performance Si-based vacuum electronic nanodevices.

The Growth Mechanism of Vertically Aligned ZnO Nanowire Arrays on Non-epitaxial Si(100) Substrates

2011 ◽  
Vol 58 (6) ◽  
pp. 817-821 ◽  
Author(s):  
Yu-Tung Yin ◽  
Yen-Zhi Chen ◽  
Ching-Hsiang Chen ◽  
Liang-Yih Chen
Keyword(s):  
Growth Mechanism ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Zno Nanowire Arrays ◽  
Vertically Aligned

Synthesis of Self-Supporting ZnO Nanowire Array Film and its Optical Property and Room Temperature Ferromagnetism

2021 ◽  
Vol 1036 ◽  
pp. 45-52
Author(s):  
Jiao Yang ◽  
Xin Yu Wang ◽  
Peng Kai Li ◽  
Ji Fa Huang ◽  
Peng Hao Deng
Keyword(s):  
Exposure Time ◽  
Room Temperature ◽  
Surface Defects ◽  
Room Temperature Ferromagnetism ◽  
Nanowire Array ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Vertical Orientation ◽  
Vibration Sample Magnetometer ◽  
The Relationship

X-ray diffractometer, field emission scanning electron microscope (SEM, Hitachi S-4800), laser confocal micro-region Raman spectrometer and vibration sample magnetometer were used to systematically study the effects of polyethyleneimine concentrations and exposure time on the morphology and size of ZnO nanowire arrays. The photoelectric property and the relationship between the morphology of nanowire arrays and ferromagnetism at room temperature were also analyzed. Under 15 min exposure time, when the polyethyleneimine concentration is 2.25 g / L, the obtained ZnO nanowire array film exhibits the smallest size, the optimal density and vertical orientation. According to the study of luminescence and room temperature magnetism, it is shown that the optical and ferromagnetic property are related to the variation tendency of oxygen defects and surface defects of the ZnO nanowires.

Tunable Photoluminescence of ZnO Nanowire Arrays via Native Defects

2020 ◽  
Vol 15 (3) ◽  
pp. 394-397
Author(s):  
Liqing Liu ◽  
Wei Ju ◽  
Yongtao Li ◽  
Xuemin He ◽  
Hongguang Zhang ◽  
...  
Keyword(s):  
Great Influence ◽  
Nanowire Arrays ◽  
Near Band Edge ◽  
Zno Nanowire ◽  
X Ray Diffraction ◽  
Photoelectric Device ◽  
Sem Image ◽  
Annealing Conditions ◽  
Zno Nanowire Arrays ◽  
Vertically Aligned

Natural ZnO nanomaterials have abundant oxygen vacancies which has great influence on the physical properties. Here, the ZnO nanowire arrays (ZNAs) have been obtained using microwave heating method. These samples' photoluminescence (PL) properties were studied under different annealing conditions. The field emission scanning electron microscope (SEM) image shows that the vertically aligned ZNAs basically have the same morphology after annealing at different times. X-ray diffraction (XRD) spectra demonstrate the best crystallization when the sample was annealed at 400 °C for 2 hours. Photoluminescence pattern indicates that the near-band-edge (NBE) emission is stronger with increasing annealing times, however, the defect-related emission decreases with the annealing times. This result indicates that crystallization of ZnO nanowires can be improved and the defects can decrease by annealing and the crystallization of the sample is wonderful at 400 °C for 2 h annealing. Meanwhile, adjusting photoluminescence characterizes through annealing can provide the basis for application of ZnO in photoelectric device.

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