THERMOELECTRIC PROPERTIES OF MANGANESE-DOPED p-TYPE SKUTTERUDITES CeyFe4-xMnxSb12

2013 ◽  
Vol 06 (05) ◽  
pp. 1340003 ◽  
Author(s):  
PENGFEI QIU ◽  
XUN SHI ◽  
RUIHENG LIU ◽  
YUTING QIU ◽  
SHUN WAN ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermoelectric Properties ◽  
Hole Concentration ◽  
Mn Doping ◽  
Maximum Value ◽  
The Matrix ◽  
Filled Skutterudites ◽  
P Type ◽  
Mn Doped ◽  
Thermal Conductivities

R y Fe 4 Sb 12-based filled skutterudites have been studied extensively as p-type legs used in high-temperature thermoelectric generator. One approach to further improve their thermoelectric performance is to optimize the overhigh hole concentration in R y Fe 4 Sb 12 skutterudite. In this study, we used element Mn doped on the skutterudite framework and systemically investigated the effects of Mn on the filler filling fractions, crystal structures, and high-temperature thermoelectric properties in Ce y Fe 4-x Mn x Sb 12. It is found that the Mn doping limit at Fe sites is around 0.15. Mn doping slightly enhances Ce filling fractions because Mn acts as an electron acceptor and its doping could push more electron donator Ce into the voids of skutterudites. Although Mn has one valence electron less than Fe , the excessive electrons donated by Ce fillers can completely compensate the holes generated by Mn and reduce the material's hole concentration, leading to a much reduced electrical conductivity and electrical thermal conductivity. Since the lattice thermal conductivities of Mn -doped samples are almost unchanged as compared with that of the matrix, the total thermal conductivities are obviously decreased. Meanwhile, high power factors are maintained in Mn -doped samples because of the enhanced Seebeck coefficient as well as the undegraded carrier mobility. As a combined effect, the figure of merit in Mn -doped samples is much improved in the whole temperature range. Sample CeFe 3.85 Mn 0.15 Sb 12 exhibits a maximum value of 0.98 at 800 K among all the samples investigated in this work.

High-Temperature Thermoelectric Properties of Ge-Substituted p-Type Nd-Filled Skutterudites

2016 ◽  
Vol 46 (5) ◽  
pp. 2958-2963 ◽  
Author(s):  
Nusrat Shaheen ◽  
Xingchen Shen ◽  
Muhammad Sufyan Javed ◽  
Heng Zhan ◽  
Lijie Guo ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermoelectric Properties ◽  
Filled Skutterudites ◽  
P Type

Study on Phases and Thermoelectric Properties of Bulk Fe4Sb12 and Fe3CoSb12 Prepared by Milling and Sintering

2011 ◽  
Vol 121-126 ◽  
pp. 1526-1529
Author(s):  
Ke Gao Liu ◽  
Jing Li
Keyword(s):  
Thermoelectric Properties ◽  
Impurity Phase ◽  
Semiconductor Materials ◽  
Thermal Constant ◽  
X Ray Diffraction ◽  
X Ray ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Type Semiconductor ◽  
P Type

Bulk Fe4Sb12 and Fe3CoSb12 were prepared by sintering at 600 °C. The phases of samples were analyzed by X-ray diffraction and their thermoelectric properties were tested by electric constant instrument and laser thermal constant instrument. Experimental results show that, the major phases of bulk samples are skutterudite with impurity phase FeSb2. The electric resistivities of the samples increase with temperature rising at 100~500 °C. The bulk samples are P-type semiconductor materials. The Seebeck coefficients of the bulk Fe4Sb12 are higher than those of bulk Fe3CoSb12 samples at 100~200 °C but lower at 300~500 °C. The power factor of the bulk Fe4Sb12 samples decreases with temperature rising while that of bulk Fe3CoSb12 samples increases with temperature rising at 100~500 °C. The thermal conductivities of the bulk Fe4Sb12 samples are relatively higher than those of and Fe3CoSb12, which maximum value is up to 0.0974 Wm-1K-1. The ZT value of bulk Fe3CoSb12 increases with temperature rising at 100~500 °C, the maximum value is up to 0.031.The ZT values of the bulk Fe4Sb12 samples are higher than those of bulk Fe3CoSb12 at 100~300 °C while lower at 400~500 °C.

High-temperature thermoelectric properties of p-type skutterudites Ba0.15Yb x Co3FeSb12 and Yb y Co3FeSb9As3

2014 ◽  
Vol 50 (1) ◽  
pp. 34-39 ◽  
Author(s):  
Yongkwan Dong ◽  
Pooja Puneet ◽  
Terry M. Tritt ◽  
George S. Nolas
Keyword(s):  
High Temperature ◽  
Thermoelectric Properties ◽  
P Type

Preparation and thermoelectric properties of Ga-substituted p-type fully filled skutterudites CeFe4−xGaxSb12

2012 ◽  
Vol 196 ◽  
pp. 203-208 ◽  
Author(s):  
Gangjian Tan ◽  
Shanyu Wang ◽  
Xinfeng Tang ◽  
Han Li ◽  
Ctirad Uher
Keyword(s):  
Thermoelectric Properties ◽  
Filled Skutterudites ◽  
P Type

Microstructure Investigation of Non-equilibrium Synthesized Filled Skutterudite CeFe4Sb12

2010 ◽  
Vol 1267 ◽  
Author(s):  
Juan Zhou ◽  
Qing Jie ◽  
Qiang Li
Keyword(s):  
Electron Microscopy ◽  
Grain Size ◽  
Grain Boundaries ◽  
Thermoelectric Properties ◽  
Conventional Solid State Reaction ◽  
Filled Skutterudite ◽  
Filled Skutterudites ◽  
Higher Carrier Mobility ◽  
P Type ◽  
Non Equilibrium

AbstractWe have prepared a variety of filled skutterudites through non-equilibrium synthesis by converting melt-spun ribbons into single phase polycrystalline bulk under pressure. In general, better thermoelectric properties are found in these samples. In this work, we performed microstructure characterization of non-equilibrium synthesized p-type filled skutterudite CeFe4Sb12 by X-ray diffraction, scanning electron microscopy and transmission electron microscopy in order to understand the structural origin of the improved thermoelectric properties. It is found that the non-equilibrium synthesized samples have smaller grain size and cleaner grain boundaries when compared to the samples prepared by the conventional solid-state reaction plus long term annealing. While smaller grain size can help reduce the lattice thermal conductivity, cleaner grain boundaries ensure higher carrier mobility and subsequently, higher electrical conductivity at the application temperatures.

The Influence of RuO2 Addition on the Thermoelectric Properties of BiSbTe Alloys

2012 ◽  
Vol 512-515 ◽  
pp. 1651-1654 ◽  
Author(s):  
Yu Kun Xiao ◽  
Zhi Xiang Li ◽  
Jun Jiang ◽  
Sheng Hui Yang ◽  
Ting Zhang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Lattice Thermal Conductivity ◽  
Combined Process ◽  
Plasma Sintering ◽  
The Matrix ◽  
Spark Plasma ◽  
Xrd Patterns ◽  
Factor Α ◽  
P Type

P-type BiSbTe/RuO2 composite was fabricated using a combined process of melting and spark plasma sintering. The XRD patterns showed that RuO2 reacted with the matrix for the RuO2 content of 1.0 wt% and 4.0 wt% samples. The measured thermoelectric properties showed that the highest electrical conductivity was obtained for the sample with 2.0 wt% RuO2. The power factor (α2σ/κ) decreased with the increase of RuO2 below 450 K. The lattice thermal conductivity was lower than that of BiSbTe over the whole temperature range for BiSbTe/2.0 wt% RuO2.

High-temperature thermoelectric properties of thallium-filled skutterudites

2010 ◽  
Vol 96 (20) ◽  
pp. 202107 ◽  
Author(s):  
Adul Harnwunggmoung ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
High Temperature ◽  
Thermoelectric Properties ◽  
Filled Skutterudites

Thermoelectric properties of p-type YbxLayFe2.7Co1.3Sb12 double-filled skutterudites

2013 ◽  
Vol 32 ◽  
pp. 209-213 ◽  
Author(s):  
Lina Zhou ◽  
Pengfei Qiu ◽  
Ctirad Uher ◽  
Xun Shi ◽  
Lidong Chen
Keyword(s):  
Thermoelectric Properties ◽  
Filled Skutterudites ◽  
P Type

Thermoelectric Properties of Mixed-Metal Tellurides

2007 ◽  
Vol 1044 ◽  
Author(s):  
Anthony V Powell ◽  
Fabien Guinet ◽  
Paz Vaqueiro ◽  
Ian M Wilcock ◽  
Richard L Jones
Keyword(s):  
Transport Property ◽  
Thermoelectric Properties ◽  
Diffraction Data ◽  
Type Structure ◽  
Mixed Metal ◽  
M 10 ◽  
Device Applications ◽  
P Type ◽  
Thermal Conductivities

AbstractA new series of thallium-containing materials, Tl1-xPbmATem+2 (A= Sb, Bi; m=10, 18; 0≤x≤0.3), has been prepared. Diffraction data reveal that a rocksalt-type structure is adopted at all compositions. Transport property measurements indicate n-type behaviour for the bismuth-containing materials and p-type for the antimony analogues. The reduced power factors for the latter, compared to the bismuth-containing materials, are primarily due to their more resistive nature. The highest power factors occur at a thallium deficiency in the range 0.1≤x≤0.2. Measured thermal conductivities are reduced from that of the binary telluride, suggesting that the materials may have potential as n/p-type components in device applications.

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