The theory of direct magnetoelectric effect in the bilayer system of ferromagnetic–piezoelectric

The theory of direct magnetoelectric (ME) effect in a bilayer of ferromagnetic and piezoelectric is developed taking into account nonuniform distribution of electrical field on a piezoelectric layer thickness. The simultaneous solution of the motion equations for piezoelectric and ferromagnetic mediums allowed to numerically and analytically calculate the dependence of natural mechanical oscillation on structure parameters and to determine the dependence of ME effect coefficient on frequency of the variable magnetic field.

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Strong Enhancement of Bending-Mode Magnetoelectric Effect by Layer Sequence Choice in Thin Film Bilayer Composites on a Substrate

MRS Proceedings ◽

10.1557/opl.2014.395 ◽

2014 ◽

Vol 1660 ◽

Author(s):

Matthias Krantz ◽

Jascha Lukas Gugat ◽

Martina Gerken

Keyword(s):

Magnetic Field ◽

Thin Film ◽

Layer Thickness ◽

Elastic Layer ◽

Magnetoelectric Effect ◽

Open Circuit ◽

Layer Sequence ◽

Bending Mode ◽

Static Effect ◽

Alternate Layer

ABSTRACTMagnetoelectric (ME) effects in bilayer composite cantilevers of magnetostrictive (MS) and piezoelectric (PE) materials on a substrate (Sub) are investigated theoretically for the FeCoBSi-AlN-Si system in open circuit mode and compared for different MS-PE-Sub layer thickness ratios and layer sequence choices. Static and resonant magnetic field excitations, the latter with resonance-enhanced cantilever oscillation, are investigated. Greatly differing behavior of the ME response with layer thicknesses is found for alternate layer sequences and excitation modes with the greatest resonant ME effect for the MS and PE layers on opposite sides of the substrate and the highest static effect for non-central substrates. The unexpected layer sequence systematics of the ME response are explained by the behaviour of the neutral (zero strain) plane in the strain coupled elastic layer stack.

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Magnetoelectric Effect in Magnetostrictive/Polymer and Piezoelectric Composites

Aerospace ◽

10.1115/imece2003-43222 ◽

2003 ◽

Author(s):

Nersesse Nersessian ◽

Siu Wing Or ◽

Gregory P. Carman

Keyword(s):

Magnetic Field ◽

Piezoelectric Layer ◽

Magnetoelectric Effect ◽

Bias Magnetic Field ◽

Piezoelectric Composites ◽

Voltage Coefficient

A 1200m V/cmOe magnetoelectric voltage coefficient was measured in a Terfenol-D/epoxy and PZT-5H[2-2] composite. The magnetoelectric effect is a result of a coupling between the magnetostrictive (Terfenol-D/epoxy) and piezoelectric (PZT-5H) layers. The coupling was achieved mechanically by bonding the piezoelectric layer in between two magnetostrictive layers. The maximum in magnetoelectric voltage coefficient was measured at a frequency of 8Hz and a bias magnetic field of 103kA/m. The magnetoelectric voltage coefficient was observed to be highly dependent upon the bias magnetic field.

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Магнитоэлектрический эффект в трехслойных асимметричных структурах в области изгибных мод колебаний

Физика твердого тела ◽

10.21883/ftt.2020.08.49600.049 ◽

2020 ◽

Vol 62 (8) ◽

pp. 1192

Author(s):

Д.А. Филиппов ◽

T.A. Galichyan ◽

J. Zhang ◽

Ying Liu ◽

Yajun Qi ◽

...

Keyword(s):

Layer Thickness ◽

Piezoelectric Layer ◽

Magnetoelectric Effect ◽

Layer Structure ◽

Thickness Ratio ◽

Asymmetric Structures ◽

The Third ◽

Magnetoelectric Coefficient

Abstract A theory of the magnetoelectric effect in three-layer asymmetric structures composed of a piezoelectric layer and two magnetostriction layers with opposite magnetostriction signs is presented. The thickness ratio of the layers is obtained, at which this effect is maximum. It is shown that the sign of the magnetoelectric coefficient changes to opposite (with respect to the initial two-layer structure) with an increase in the third-layer thickness. It is established that the magnetoelectric coefficients of the structures with different arrangements of the layers with positive and negative magnetostriction have opposite signs.

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Controllable Inductors and Transformers Based On Ferromagnet-Piezoelectric Heterostructuresformers Based On Ferromagnet-Piezoelectric Heterostructures

Radioelectronics Nanosystems Information Technologies ◽

10.17725/rensit.2021.13.027 ◽

2021 ◽

Vol 13 (1) ◽

pp. 27-38

Author(s):

Leonid Yu. Fetisov ◽

◽

Dmitry V. Chashin ◽

Yuri K. Fetisov ◽

◽

...

Keyword(s):

Magnetic Field ◽

External Magnetic Field ◽

Electric Field ◽

Low Power ◽

Transfer Coefficient ◽

Piezoelectric Layer ◽

Magnetoelectric Effect ◽

Electrical Circuits ◽

Radio Engineering ◽

Transformation Ratio

The elements of electrical circuits, which inductance L can be tuned electrically (the so-called "inductors"), and transforemers are used in modern electronics, radio engineering and low-power energy for galvanic isolation of circuits and converting voltage amplitudes. In this work, new devices of this type have been manufactured and investigated, using the magnetoelectric effect in ferromagnetic-piezoelectric heterostructures. The inductance of the manufactured inductor is tuned by 400% by a control electric field of up to 10 kV/cm applied to the piezoelectric layer of the structure, and by 1000% by an external magnetic field of up to 10 Oe, acting on the structure. The transformer operates in the range of input voltages of 0-8 V, has a power transfer coefficient of 30% and a voltage transformation ratio of 0-14, tunable by a control magnetic field of up to 80 Oe. Methods for calculating the characteristics of magnetoelectric inductor and transformer are described.

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Electrical Anisotropy of Thin Metal Films Growing on Dielectric Substrates

Nonlinear Analysis Modelling and Control ◽

10.15388/na.2002.7.2.15193 ◽

2002 ◽

Vol 7 (2) ◽

pp. 45-52

Author(s):

L. Jakučionis ◽

V. Kleiza

Keyword(s):

Magnetic Field ◽

Thin Films ◽

Uniaxial Anisotropy ◽

Metal Films ◽

Thin Layers ◽

Electrical Anisotropy ◽

Electrical Field ◽

Dielectric Substrates ◽

Unequal Probability ◽

Conductive Thin Films

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.

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