DESIGN OF SPIN WAVE FUNCTIONS-BASED LOGIC CIRCUITS

SPIN ◽  
2012 ◽  
Vol 02 (03) ◽  
pp. 1240006 ◽  
Author(s):  
PRASAD SHABADI ◽  
SANKARA NARAYANAN RAJAPANDIAN ◽  
SANTOSH KHASANVIS ◽  
CSABA ANDRAS MORITZ

Over the past few years, several novel nanoscale computing concepts have been proposed as potential post-complementary metal oxide semiconductor (CMOS) computing fabrics. In these, key focus is on inventing a faster and lower power alternative to conventional metal oxide semiconductor field effect transators. Instead, we propose a fundamental shift in mindset towards more functional building blocks, replacing simple switches with more sophisticated information encoding and computing based on alternate state variables to achieve a significantly more efficient and compact logic. Specifically, we propose wave computation enabled by magnetic spin wave interactions called as spin wave functions (SPWFs). In SPWFs, computation is based on wave interference and information can be encoded in a wave's phase, amplitude and frequency. In this paper, we provide an update on key fabric concepts and design aspects. Our analysis shows that circuit design choices can have a significant impact on overall fabric/device capabilities required and vice versa. Thereby, we adapt an integrated fabric-circuit exploration methodology. Control schemes for wave streaming and synchronization are also discussed with several SPWF circuit topologies. Our estimations show that significant area and power benefits can be expected for SPWF-based designs versus CMOS. In particular, for a 1-bit adder up to 40X area benefit and up to 304X power consumption reduction may be possible with SPWF-based implementation versus 45 nm CMOS.

2021 ◽  
Vol 50 (16) ◽  
pp. 5540-5551
Author(s):  
Almudena Notario-Estévez ◽  
Xavier López ◽  
Coen de Graaf

This computational study presents the molecular conduction properties of polyoxovanadates V6O19 (Lindqvist-type) and V18O42, as possible successors of the materials currently in use in complementary metal–oxide semiconductor (CMOS) technology.


Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1683
Author(s):  
Winai Jaikla ◽  
Fabian Khateb ◽  
Tomasz Kulej ◽  
Koson Pitaksuttayaprot

This paper proposes the simulated and experimental results of a universal filter using the voltage differencing differential difference amplifier (VDDDA). Unlike the previous complementary metal oxide semiconductor (CMOS) structures of VDDDA that is present in the literature, the present one is compact and simple, owing to the employment of the multiple-input metal oxide semiconductor (MOS) transistor technique. The presented filter employs two VDDDAs, one resistor and two grounded capacitors, and it offers low-pass: LP, band-pass: BP, band-reject: BR, high-pass: HP and all-pass: AP responses with a unity passband voltage gain. The proposed universal voltage mode filter has high input impedances and low output impedance. The natural frequency and bandwidth are orthogonally controlled by using separated transconductance without affecting the passband voltage gain. For a BP filter, the root mean square (RMS) of the equivalent output noise is 46 µV, and the third intermodulation distortion (IMD3) is −49.5 dB for an input signal with a peak-to peak of 600 mV, which results in a dynamic range (DR) of 73.2 dB. The filter was designed and simulated in the Cadence environment using a 0.18-µm CMOS process from Taiwan semiconductor manufacturing company (TSMC). In addition, the experimental results were obtained by using the available commercial components LM13700 and AD830. The simulation results are in agreement with the experimental one that confirmed the advantages of the filter.


1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1050-1053 ◽  
Author(s):  
Masayasu Miyake ◽  
Toshio Kobayashi ◽  
Yutaka Sakakibara ◽  
Kimiyoshi Deguchi ◽  
Mitsutoshi Takahashi

Sign in / Sign up

Export Citation Format

Share Document