Annealing Temperature Dependence of Exchange Bias Field in MnIr-CoFe Thin Films

2021 ◽  
Vol 31 (6) ◽  
pp. 296-300
Author(s):  
SeokSoo Yoon ◽  
DongYoung Kim
2011 ◽  
Vol 519 (7) ◽  
pp. 2376-2380 ◽  
Author(s):  
Xiumei Wu ◽  
Shuai Dong ◽  
Ya Zhai ◽  
Mingxiang Xu ◽  
Yi Kan

2011 ◽  
Vol 109 (2) ◽  
pp. 023910 ◽  
Author(s):  
Arno Ehresmann ◽  
Christoph Schmidt ◽  
Tanja Weis ◽  
Dieter Engel

2017 ◽  
Vol 43 (6) ◽  
pp. 5047-5052
Author(s):  
R.A. Capeli ◽  
F.M. Pontes ◽  
A.J. Chiquito ◽  
W.B. Bastos ◽  
Marcelo A. Pereira-da-Silva ◽  
...  

2008 ◽  
Vol 254 (16) ◽  
pp. 4956-4960 ◽  
Author(s):  
Xiao-Hong Xu ◽  
Xiu-Fang Qin ◽  
Feng-Xian Jiang ◽  
Xiao-Li Li ◽  
Ya Chen ◽  
...  

SPIN ◽  
2019 ◽  
Vol 09 (01) ◽  
pp. 1950004
Author(s):  
Jingchun Wang ◽  
Floriano Cuccureddu ◽  
Rafael Ramos ◽  
Cormac Ó. Coileáin ◽  
Igor V. Shvets ◽  
...  

We present the possibility of enhancing magnetoresistance (MR) by controlling nanoscale domain wall (DW) width in a planar nanowire array. Results based on micromagnetic calculations show that DW width decreases with increasing exchange bias field and decreases with reducing exchange interaction between neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on [Formula: see text]-plane sapphire to demonstrate the feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature. compared with flat and stepped Fe3O4 thin films.


2010 ◽  
Vol 45 (11) ◽  
pp. 3001-3006 ◽  
Author(s):  
X. J. Zheng ◽  
Q. Y. Wu ◽  
J. F. Peng ◽  
L. He ◽  
X. Feng ◽  
...  

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