The Doping of Ag+ Enhanced the Antibiocorrosive Effect of Titania in Seawater under Visible Light

Sol-gel TiO2 thin films undoped and doped with Ag-ions have been formed on 304ss by dip-coating method respectively. The Ag/TiO2 films are compact and have anatase phase with stable crystal structure and have a thickness of 50 nm approximately. The bactericidal rate of the Ag/TiO2 film against sulfate-reducing bacteria (SRB) strains reaches 97.1% when doping Ag+ with a percentage of 3%. The analysis of potentiodynamic polarization curves illustrates Ag/TiO2 film decreases the corrosion rate obviously.

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TiO2 Thin Films Produced by Ultrasonic-Agitation Assisted Sol-Gel for Propane Gas Sensor

10.5772/intechopen.95528 ◽

2021 ◽

Author(s):

Dwight Acosta-Najarro ◽

Ismael A. Garduño-Wilches ◽

Maria de la Luz Olvera ◽

Arturo Maldonado

Keyword(s):

Film Thickness ◽

Gas Sensors ◽

Anatase Phase ◽

Sol Gel ◽

Dip Coating ◽

Tio2 Thin Films ◽

Tio2 Anatase ◽

Partial Pressures ◽

Coating Method ◽

Dip Coating Method

TiO2 films were deposited by the sol–gel dip coating method assisted by ultra sonic agitation, for their use as propane gas sensors. XRD anlaysis revealed the TiO2 anatase phase for all samples. The film thickness was controlled with the number of the dip-coating immersion cycles, obtaining thicknesses from 10 to 130 nm and a growing rate of 18 nm per immersion. Surface morphology shows that films grow more compact and densely packed as the number of immersion cycles increase. Gas sensing studies indicate that work temperatures above 300°C are needed for sensing activation of the films. Gas sensors sensitivity as a function of propane concentration and film thickness revealed a two-regime behavior: for partial pressures of propane above 400 ppm the sensitivity is not dependent of the film thickness, whereas it is dependent on this parameter at lower partial pressures. Such behavior is attributed to a space charge region and a change in surface structure. For the low concentration regime, the maximum sensitivity was obtained for a film thickness of 110 nm or 5 inmersions.

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Characteristics and optical properties of Fe3+ doped SiO2/TiO2 thin films prepared by the sol-gel dip-coating method

Science and Technology Development Journal ◽

10.32508/stdj.v16i1.1424 ◽

2013 ◽

Vol 16 (1) ◽

pp. 92-100

Author(s):

Chien Mau Dang ◽

Dam Duy Le ◽

Tam Thi Thanh Nguyen ◽

Dung Thi My Dang

Keyword(s):

Thin Films ◽

Optical Properties ◽

Sol Gel ◽

Dip Coating ◽

X Ray Diffraction ◽

Tio2 Thin Films ◽

Water Contact ◽

Glass Substrates ◽

Coating Method ◽

Dip Coating Method

In this study, we have successfully synthesized Fe3+ doped SiO2/TiO2 thin films on glass substrates using the sol-gel dip-coating method. After synthesizing, the samples were annealed at 5000C in the air for 1 hour. The characteristics and optical properties of Fe3+ doped SiO2/TiO2 films were then investigated by X-ray diffraction (XRD), ultraviolet-visible spectroscopy (UV-vis) and Fourier transform infrared spectroscopy (FT-IR). An antifogging ability of the glass substrates coated with the fabricated film is investigated and explained by a water contact angle under visible-light. The analyzed results also show that the crystalline phase of TiO2 thin films comprised only the anatase TiO2, but the crystalline size decreased from 8.8 to 5.9 nm. We also observed that the absorption edge of Fe3+- doped SiO2/TiO2 thin films shifted towards longer wavelengths (i.e. red shifted) from 371.7nm to 409.2 nm when the Fe3+-doped concentration increased from 0 to 1 % mol.

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Comparative study of multilayered ZnO/TiO2/ZnO and TiO2/ZnO/TiO2 thin films prepared by sol–gel dip coating method

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-017-7685-9 ◽

2017 ◽

Vol 28 (23) ◽

pp. 17499-17504 ◽

Cited By ~ 2

Author(s):

M. I. Khan ◽

Muhammad Saleem ◽

K. A. Bhatti ◽

Rabia Qindeel ◽

Hayat Saeed Althobaiti ◽

...

Keyword(s):

Thin Films ◽

Comparative Study ◽

Sol Gel ◽

Dip Coating ◽

Tio2 Thin Films ◽

Coating Method ◽

Dip Coating Method

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Effect of annealing temperature on nanocrystalline TiO2 thin films prepared by sol–gel dip coating method

Optik ◽

10.1016/j.ijleo.2013.04.085 ◽

2013 ◽

Vol 124 (23) ◽

pp. 6201-6204 ◽

Cited By ~ 22

Author(s):

A. Ranjitha ◽

N. Muthukumarasamy ◽

M. Thambidurai ◽

R. Balasundaraprabhu ◽

S. Agilan

Keyword(s):

Thin Films ◽

Annealing Temperature ◽

Sol Gel ◽

Dip Coating ◽

Tio2 Thin Films ◽

Nanocrystalline Tio2 ◽

Coating Method ◽

Dip Coating Method

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Synthesis and Characterization of Nanocrystalline TiO2 Thin Films by Sol-Gel Dip Coating Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.678.108 ◽

2013 ◽

Vol 678 ◽

pp. 108-112 ◽

Cited By ~ 2

Author(s):

Narayanaswamy Gokilamani ◽

N. Muthukumarasamy ◽

Mariyappan Thambidurai

Keyword(s):

Thin Films ◽

Sol Gel ◽

Dip Coating ◽

X Ray Diffraction ◽

Tio2 Thin Films ◽

Atomic Force ◽

Coating Method ◽

Nanocrystalline Titanium ◽

Dip Coating Method

Nanocrystalline titanium dioxide (TiO2) thin films have been prepared by dip coating method. The TiO2 thin films have been coated on glass substrate and annealed at 400, 450 and 500° C respectively. The X- ray diffraction pattern shows that TiO2 nanocrystalline thin films are of anatase structure and the grain size is found to be in the range of 20-35 nm. The annealed films have been observed to be nanocrystalline in nature and the crystallinity has been observed to improve on annealing. The surface topography of the films has been studied using atomic force microscope. The optical properties have been studied using transmittance spectra. The band gap has been found to lie in the range of 3.70 to 3.83 eV depending on the annealing temperature.

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Influence of Multi-Round Annealing Process on the Optical and Electrical Properties of Sol-Gel Derived TiO2-δ Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.465.165 ◽

2012 ◽

Vol 465 ◽

pp. 165-171

Author(s):

Jin Ming Liu ◽

Xiao Ru Zhao ◽

Li Bing Duan ◽

Xiao Jun Bai ◽

Ning Jin ◽

...

Keyword(s):

Thin Films ◽

Oxygen Vacancies ◽

Sol Gel ◽

Dip Coating ◽

Annealing Process ◽

Visible Range ◽

Tio2 Thin Films ◽

Glass Substrates ◽

Coating Method ◽

Dip Coating Method

Anatase TiO2- thin films on glass substrates were prepared by sol-gel dip-coating method. We designed a multi-round annealing process which was under the air pressure of 5 Pa and then 5×10-2 Pa for one hour each at 550 °C, and such process was repeated for three times. The special designed annealing process can obviously improve the conductivity of the udoped TiO2- thin films. The minimum resistivity of the undoped TiO2- thin films reached 0.8 Ω cm after being treated by the multi-round annealing process. It was demonstrated that such annealing process was an effective way to increase the defects in TiO2- thin films such as oxygen vacancies. The average transmittances of the films were approximately 60~80% in the visible range with the forbidden gaps of 3.25~3.35 eV. After the multi-round annealing process, the optical forbidden gaps of the films became narrowed slightly, which might be also related to the defects introduced during the multi-annealing process.

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Investigation on the Structural and Optical Properties of Nanocrystalline TiO2 Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.678.103 ◽

2013 ◽

Vol 678 ◽

pp. 103-107 ◽

Cited By ~ 1

Author(s):

Arumugam Ranjitha ◽

Natarajan Muthukumarasamy ◽

Santhanam Agilan ◽

Mariyappan Thambidurai ◽

Rangasamy Balasundraprabhu ◽

...

Keyword(s):

Thin Films ◽

Sol Gel ◽

Dip Coating ◽

Band Gap Energy ◽

Tio2 Thin Films ◽

Nanocrystalline Tio2 ◽

Structural Investigations ◽

Force Microscopy ◽

Coating Method ◽

Dip Coating Method

Nanocrystalline TiO2 thin films were prepared by sol-gel dip coating method. The structural investigations were carried out using x-ray diffraction technique. Anatase TiO2 thin films with tetragonal phase were obtained and the grain size was observed to lie in the range of 21-25 nm. Analysis on the surface topography of prepared films have been carried out using atomic force microscopy (AFM). The band gap energy is calculated from the absorption spectra of TiO2 films and is found to lie in the range 3.3 to 3.7 eV.

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Sol–Gel Dip Coating Method Synthesis of Mn-Doped Titanium Dioxide Thin Films

Journal of Molecular and Engineering Materials ◽

10.1142/s2251237318500016 ◽

2018 ◽

Vol 06 (01n02) ◽

pp. 1850001

Author(s):

Abdelmalek Kharoubi ◽

Amar Bouaza ◽

Bedhiaf Benrabah ◽

Abdelkader Ammari ◽

Hadj Benhebal ◽

...

Keyword(s):

Thin Films ◽

Anatase Phase ◽

Sol Gel ◽

Dip Coating ◽

Visible Range ◽

Infrared Transmission ◽

Coating Method ◽

Dip Coating Method ◽

Titanium Dioxide Thin Films ◽

Mn Doped

Undoped and Mn-doped TiO2 thin films have been prepared by sol–gel dip-coating technique on glass and silicon substrates. X-ray diffraction studies showed that both TiO2 and Mn-doped TiO2 thin films are of anatase phase with (101) as preferential orientation. All films exhibit high transparency ([Formula: see text]80%) over the visible range. The optical bandgap decreases from 3.66[Formula: see text]eV to 3.52[Formula: see text]eV due to the extent of electronic states introduced by doping. Infrared transmission spectra showed Ti–O (625[Formula: see text]cm[Formula: see text]) and Ti–O–Ti (495–436[Formula: see text]cm[Formula: see text]) bands. Thermal analysis revealed endothermic reactions between 94∘C and 110∘C and exothermic reactions between 406∘C and 443∘C. The Nyquist plots depicted that equivalent circuit of the films is an [Formula: see text] parallel. The resistance [Formula: see text] decreases while the capacitance [Formula: see text] increases with Mn-doping.

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