Near-surface defects in hydrogen-plasma-treated boron-doped silicon studied by positron beam spectroscopy

1999 ◽  
Vol 68 (6) ◽  
pp. 643-645 ◽  
Author(s):  
C.E. Gonzalez ◽  
S.C. Sharma ◽  
N. Hozhabri ◽  
D.Z. Chi ◽  
S. Ashok
Keyword(s):  
Surface Defects ◽  
Hydrogen Plasma ◽  
Positron Beam ◽  
Near Surface ◽  
Boron Doped ◽  
Doped Silicon

Near-Surface Defects in Boron-Doped Diamond Schottky Diodes Studied From Capacitance Transients

2008 ◽  
Vol 1 ◽  
pp. 035003 ◽  
Author(s):  
Pierre Muret ◽  
Julien Pernot ◽  
Tokuyuki Teraji ◽  
Toshimichi Ito
Keyword(s):  
Surface Defects ◽  
Schottky Diodes ◽  
Boron Doped Diamond ◽  
Near Surface ◽  
Boron Doped

Positron spectroscopy of bulk and near-surface defects in semiconductors

1989 ◽  
Vol 67 (8) ◽  
pp. 813-817
Author(s):  
P. Hautojārvi
Keyword(s):  
Positron Annihilation ◽  
Positron Lifetime ◽  
Surface Defects ◽  
Positron Beam ◽  
Near Surface ◽  
Slow Positron ◽  
Positron Spectroscopy ◽  
Positron Lifetime Spectroscopy ◽  
Defects In Semiconductors ◽  
Ion Implanted

The use of positron annihilation to study defects in semiconductors is discussed. Positron-lifetime spectroscopy reveals As vacancies in as-grown GaAs and gives information on ionization levels. The vacancy profiles in ion-implanted Si are investigated by slow positron beam.

Defects in MBE-grown Silicon Epilayers Studied with Variable-Energy Positrons

1989 ◽  
Vol 163 ◽  
Author(s):  
P.J. Simpson ◽  
P.J. Schultz ◽  
I.V. Mitchell ◽  
T.E. Jackman ◽  
G.C. Aers
Keyword(s):  
Depth Distribution ◽  
Surface Defects ◽  
Positron Beam ◽  
Near Surface ◽  
Different Temperatures ◽  
Defects And Impurities ◽  
Non Destructive ◽  
Beam Technique ◽  
Non Destructive Techniques ◽  
Variable Energy

AbstractFew non-destructive techniques are available which provide information regarding defect type, concentration and depth distribution in semiconductors. The variable-energy positron beam technique has recently demonstrated a sensitivity to near surface defects and impurities at low defect concentrations. In the present study, intrinsic silicon (100) epilayers of ~3000 Å thickness grown by MBE at different temperatures were examined by this method for evidence of changing defect concentration and type.

Monoenergetic Positron Beam Studies of Near Surface Defects Induced by Low Dose Be-Implantation

1992 ◽  
Vol 105-110 ◽  
pp. 1483-1486 ◽  
Author(s):  
Akira Uedono ◽  
Long Wei ◽  
Y. Tabuki ◽  
H. Kondo ◽  
Shoichiro Tanigawa ◽  
...  
Keyword(s):  
Low Dose ◽  
Surface Defects ◽  
Positron Beam ◽  
Near Surface

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Electron Channelling Contrast Imaging of Dislocations

1990 ◽  
Vol 48 (1) ◽  
pp. 600-601
Author(s):  
J.T. Czernuszka ◽  
N.J. Long ◽  
P.B. Hirsch
Keyword(s):  
Field Emission ◽  
Secondary Electron ◽  
Surface Defects ◽  
Spot Size ◽  
Beam Divergence ◽  
Contrast Imaging ◽  
Scattered Electron ◽  
Near Surface ◽  
Filter System ◽  
Electron Channelling

In the 1970s there was considerable interest in the development of the electron channelling contrast imaging (ECCI) technique for imaging near surface defects in bulk (electron opaque) specimens. The predictions of the theories were realised experimentally by Morin et al., who used a field emission gun (FEG) operating at 40-50kV and an energy filter such that only electrons which had lost no more than a few 100V were detected. This paper presents the results of a set of preliminary experiments which show that an energy filter system is unneccessary to image and characterise the Burgers vectors of dislocations in bulk specimens. The examples in the paper indicatethe general versatility of the technique.A VG HB501 STEM with a FEG was operated at 100kV. A single tilt cartridge was used in the reflection position of the microscope. A retractable back-scattered electron detector was fitted into the secondary electron port and positioned to within a few millimetres of the specimen. The image was acquired using a Synoptics Synergy framestore and digital scan generator and subsequently processed using Semper 6. The beam divergence with the specimen in this position was 2.5 mrads with a spot size of approximately 4nm. Electron channelling patterns were used to orientate the sample.

Direct Plan View FIB Liftout for Near-Surface Defect Analysis in TEM

2013 ◽  
Author(s):  
Max L. Lifson ◽  
Carla M. Chapman ◽  
D. Philip Pokrinchak ◽  
Phyllis J. Campbell ◽  
Greg S. Chrisman ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Silicon Germanium ◽  
Focused Ion Beam ◽  
Surface Defects ◽  
Ion Beam ◽  
Misfit Dislocations ◽  
Tem Analysis ◽  
Plan View ◽  
Near Surface ◽  
Straightforward Method

Abstract Plan view TEM imaging is a powerful technique for failure analysis and semiconductor process characterization. Sample preparation for near-surface defects requires additional care, as the surface of the sample needs to be protected to avoid unintentionally induced damage. This paper demonstrates a straightforward method to create plan view samples in a dual beam focused ion beam (FIB) for TEM studies of near-surface defects, such as misfit dislocations in heteroepitaxial growths. Results show that misfit dislocations are easily imaged in bright-field TEM and STEM for silicon-germanium epitaxial growth. Since FIB tools are ubiquitous in semiconductor failure analysis labs today, the plan view method presented provides a quick to implement, fast, consistent, and straightforward method of generating samples for TEM analysis. While this technique has been optimized for near-surface defects, it can be used with any application requiring plan view TEM analysis.

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