Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique

2011 ◽  
Vol 98 (7) ◽  
pp. 072108 ◽  
Author(s):  
Yuhua Wen ◽  
Zhiyuan He ◽  
Jialin Li ◽  
Ruihong Luo ◽  
Peng Xiang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Selective Area Growth ◽  
Growth Technique ◽  
Enhancement Mode ◽  
Selective Area ◽  
Area Growth ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

scholarly journals Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

2018 ◽  
Vol 123 (2) ◽  
pp. 024902 ◽  
Author(s):  
Fengzai Tang ◽  
Kean B. Lee ◽  
Ivor Guiney ◽  
Martin Frentrup ◽  
Jonathan S. Barnard ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique

2011 ◽  
Vol 56 (1) ◽  
pp. 163-167 ◽  
Author(s):  
Hiroshi Kambayashi ◽  
Yoshihiro Satoh ◽  
Takuya Kokawa ◽  
Nariaki Ikeda ◽  
Takehiko Nomura ◽  
...  
Keyword(s):  
Field Effect ◽  
High Field ◽  
Selective Area Growth ◽  
Field Effect Mobility ◽  
Si Substrate ◽  
Growth Technique ◽  
Selective Area ◽  
Area Growth
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