Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors
2018 ◽
Vol 123
(2)
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pp. 024902
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Fengzai Tang
◽
Kean B. Lee
◽
Ivor Guiney
◽
Martin Frentrup
◽
Jonathan S. Barnard
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...
2018 ◽
Vol 11
(4)
◽
pp. 675-680
◽
Ashwani Kumar
◽
Maria Merlyne De Souza
2011 ◽
Vol 4
(11)
◽
pp. 114101
◽
Daniel Morgan
◽
Mahbuba Sultana
◽
Husna Fatima
◽
Sho Sugiyama
◽
Qhalid Fareed
◽
...
2011 ◽
Vol 4
(11)
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pp. 114102
◽
Herwig Hahn
◽
Gerrit Lükens
◽
Nico Ketteniss
◽
Holger Kalisch
◽
Andrei Vescan
2010 ◽
Vol 96
(24)
◽
pp. 243506
◽
Suk Choi
◽
Hee Jin Kim
◽
Zachary Lochner
◽
Yun Zhang
◽
Yi-Che Lee
◽
...
2015 ◽
Vol 8
(3)
◽
pp. 036502
◽
Kean B. Lee
◽
Ivor Guiney
◽
Sheng Jiang
◽
Zaffar H. Zaidi
◽
Hongtu Qian
◽
...
2011 ◽
Vol 98
(7)
◽
pp. 072108
◽
Yuhua Wen
◽
Zhiyuan He
◽
Jialin Li
◽
Ruihong Luo
◽
Peng Xiang
◽
...
2006 ◽
Vol 24
(3)
◽
pp. 624-628
◽
S. P. McAlister
◽
J. A. Bardwell
◽
S. Haffouz
◽
H. Tang
2021 ◽
Vol 11
(8)
◽
pp. 085204
Yongxiong Yang
◽
Zhaojun Lin
◽
Mingyan Wang
◽
Heng Zhou
◽
Yang Liu
◽
...
2020 ◽
Vol 10
(7)
◽
pp. 075212
Guangyuan Jiang
◽
Yuanjie Lv
◽
Zhaojun Lin
◽
Yongxiong Yang
◽
Yang Liu
◽
...
2002 ◽
Vol 75
(3)
◽
pp. 387-389
◽
R.M. Chu
◽
Y.D. Zheng
◽
Y.G. Zhou
◽
P. Han
◽
B. Shen
◽
...