Extremely Low Resistance Ohmic Contacts to n-GaAs for AlGaAs/GaAs Heterojunction Bipolar Transistors

1984 ◽  
Vol 23 (Part 2, No. 8) ◽  
pp. L635-L637 ◽  
Author(s):  
Hiroshi Ito ◽  
Tadao Ishibashi ◽  
Takayuki Sugeta
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ohmic Contacts ◽  
Bipolar Transistors ◽  
Low Resistance

A Microstructual Analysis of Au/Pd/Ti Ohmic Contacts for GaAs-Based Heterojunction Bipolar Transistors (HJBTs)

1991 ◽  
Vol 240 ◽  
Author(s):  
Bernard M. Henry ◽  
A. E. Staton-Bevan ◽  
V. K. M. Sharma ◽  
M. A. Crouch ◽  
S. S. Gill
Keyword(s):  
Structural Properties ◽  
Heterojunction Bipolar Transistors ◽  
Ohmic Contacts ◽  
Heat Treatments ◽  
Bipolar Transistors ◽  
Contact Resistivity ◽  
Base Region ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
Contact Resistivities

ABSTRACTAu/Pd/Ti and Au/Ti/Pd ohmic structures to thin p+-GaAs layers have been investigated for use as contacts to the base region of HJBTs. The Au/Pd/Ti contact system yielded specific contact resistivities at or above 2.8 × 10−5Ω:cm2. Heat treatments up to 8 minutes at 380°C caused only limited interaction between the metallization and the semiconductor. The metal penetrated to a maximum depth of ≃2nm. Specific contact resistivity values less than 10−5Ωcm2 were achieved using the Au/Ti/Pd (400/75/75nm) scheme. The nonalloyed Au/Ti/Pd contact showed the best combination of electrical and structural properties with a contact resistivity value of 9 × 10≃6Ωcm2 and Pd penetration of the GaAs epilayer to a depth of cs30nm.

The Challenge of GaAs Heterojunction Bipolar Transistor Integrated Circuit Technology.

1988 ◽  
Vol 144 ◽  
Author(s):  
Han-Tzong Yuan
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
Large Scale ◽  
Ohmic Contacts ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
The Status ◽  
Impurity Doping

ABSTRACTThe status and progress of AlGaAs/GaAs heterojunction bipolar transistor integrated circuits are reviewed. The challenge of fabricating large-scale integrated circuits using heterojunction bipolar transistors is discussed. Specifically, the issues related to low defect epitaxial materials, localized impurity doping techniques, simple and reliable ohmic contacts, and multilevel interconnects are examined.

Use of InN for Ohmic contacts on GaAs/AlGaAs heterojunction bipolar transistors

1995 ◽  
Vol 66 (12) ◽  
pp. 1503-1505 ◽  
Author(s):  
F. Ren ◽  
C. R. Abernathy ◽  
S. N. G. Chu ◽  
J. R. Lothian ◽  
S. J. Pearton
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ohmic Contacts ◽  
Bipolar Transistors

Microstructure and contact-resistance temperature dependence of Pt/Ti/Ge/Pd ohmic contacts to GaAs

1994 ◽  
Vol 52 ◽  
pp. 866-867
Author(s):  
M. W. Cole ◽  
W. Y. Han ◽  
D. W. Eckart ◽  
L. M. Casas ◽  
K. A. Jones
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ohmic Contacts ◽  
Bipolar Transistors ◽  
Electrical Measurements ◽  
Electrical Field ◽  
Transmission Electron ◽  
Structural Interface ◽  
Device Applications ◽  
Interface Phases ◽  
Device Technology

The development of GaAs device technology has demonstrated the need for fabrication of low resistance thermally stable ohmic contacts. Gold based contacts have been the overwhelming choice for ohmic contacts in device applications. In particular, Au/Ge/Ni and Zn/Au alloyed contacts have been used for n and p-GaAs respectively. Numerous investigations have shown that Au-based contacts to GaAs have avery complex morphology after annealing. Specifically, structural interface inhomogeneities, such as protrusions and newly formed lateral interface phases lead to non-planar metalsemiconductor interfaces which in turn cause nonuniform current flow and consumption of the GaAs substrate. This type of interface morphology is not acceptable for device applications where a large electrical field or a shallow contact is required. In particular, devices such as heterojunction bipolar transistors (HBT's) cannot tolerate contacts with lateral and vertical interface inhomogeneities.This study employed crosssectional transmission electron microscopy (TEM), Auger electron spectroscopy (AES) and electrical measurements (transmission line mode), to systematically investigate the structural, chemical and electrical properties of the Pt/Ti/Ge/Pd contacts to both n and p+ GaAs as a function of annealing temperatures.

New Cu/Mo/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs for InGaP/GaAs Heterojunction Bipolar Transistors

2006 ◽  
Vol 45 (12) ◽  
pp. 9029-9032 ◽  
Author(s):  
Chun-Wei Chang ◽  
Tung-Ling Hsieh ◽  
Edward Yi Chang
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ohmic Contacts ◽  
Bipolar Transistors

Ohmic Contacts to p-Type III-V Semiconductors for the Base of Heterojunction Bipolar Transistors

2019 ◽  
Vol 3 (5) ◽  
pp. 47-56
Author(s):  
Suzanne E. Mohney ◽  
Eric Lysczek ◽  
Sammy Wang ◽  
Joshua Robinson
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ohmic Contacts ◽  
Bipolar Transistors ◽  
Type Iii ◽  
P Type
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