InP/InGaAs heterojunction bipolar transistors with low-resistance contact on heavily doped InP emitter layer

ABSTRACTIn this paper we demonstrate, using both SIMS and transistor electrical characteristics, that substitutional carbon fractions of 0.5% in heavily doped Si0.8Ge0.2 base heterojunction bipolar transistors (HBTs) reduce both thermal diffusion and transient enhanced diffusion (TED) of boron. Furthermore we show that carbon suppresses TED of boron in carbon-free regions that surround the carbon layers.

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The effect of emitter layer variations on the current gain of AlGaAs-GaAs heterojunction bipolar transistors grown by chemical beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90415-4 ◽

1994 ◽

Vol 136 (1-4) ◽

pp. 230-234 ◽

Cited By ~ 1

Author(s):

W.T. Moore ◽

A.J. SpringThorpe ◽

T.P. Lester ◽

S. Eicher ◽

R.K. Surridge ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

Chemical Beam Epitaxy ◽

Emitter Layer

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Molecular beam epitaxy growth for a heavily-doped thin base layer of heterojunction bipolar transistors used for high-speed integrated circuits

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80148-6 ◽

1995 ◽

Vol 150 ◽

pp. 1297-1301 ◽

Cited By ~ 1

Author(s):

N. Iizuka ◽

K. Tsuda ◽

T. Nozu ◽

T. Sugiyama ◽

Y. Kuriyama ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Integrated Circuits ◽

Heterojunction Bipolar Transistors ◽

High Speed ◽

Molecular Beam ◽

Bipolar Transistors ◽

Base Layer ◽

Molecular Beam Epitaxy Growth ◽

Heavily Doped

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Ultra-Low Resistance Base Ohmic Contact with Pt/Ti/Pt/Au for High-fmaxAlGaAs/GaAs Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.786 ◽

1994 ◽

Vol 33 (Part 1, No. 1B) ◽

pp. 786-789 ◽

Cited By ~ 11

Author(s):

Tohru Sugiyama ◽

Yasuhiko Kuriyama ◽

Masayuki Asaka ◽

Norio Iizuka ◽

Torakichi Kobayashi ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Ohmic Contact ◽

Bipolar Transistors ◽

Low Resistance

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Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 K

IEEE Transactions on Electron Devices ◽

10.1109/ted.2009.2028046 ◽

2009 ◽

Vol 56 (10) ◽

pp. 2169-2177 ◽

Cited By ~ 8

Author(s):

Lan Luo ◽

Guofu Niu ◽

Kurt A. Moen ◽

John D. Cressler

Keyword(s):

Temperature Dependence ◽

Heterojunction Bipolar Transistors ◽

Bound State ◽

Ionization Rate ◽

Bipolar Transistors ◽

Compact Modeling ◽

Temperature Dependent ◽

Alternative Approach ◽

Complete Ionization ◽

Heavily Doped

In this paper, we investigate the physics and modeling of temperature dependence of various parasitic resistances in SiGe heterojunction bipolar transistors down to 30 K. Carrier freezeout is shown to be the dominant contributor to increased resistances at cryogenic temperatures for lightly-doped and moderately-doped regions, whereas the temperature dependence of the mobility is the dominant contributor to the temperature dependence of heavily-doped regions. Two incomplete ionization models, the classic model with a doping dependent activation energy and the recent model of Altermatt , are shown to underestimate and overestimate incomplete ionization rate below 100 K for intrinsic base doping, respectively. Analysis of experimental data shows that the bound state fraction factor is temperature dependent and including this temperature dependence enables compact modeling of resistances from 30 to 300 K for moderately-doped regions. For heavily-doped regions, a dual power law mobility approximation with complete ionization is shown to work well down to 30 K. An alternative approach is also presented for heavily-doped resistors which allows one to use the same model equation for all regions.

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