Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS) of DX-centers in AlxGa1-xAs:Sn

1988 ◽  
Vol 27 (Part 1, No. 5) ◽  
pp. 738-745 ◽  
Author(s):  
Michihiro Fudamoto ◽  
Kenichiro Tahira ◽  
Jun Morimoto ◽  
Toru Miyakawa
Keyword(s):  
Spectral Analysis ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Dx Centers ◽  
Transient Spectroscopy

Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS)

1987 ◽  
Vol 26 (Part 1, No. 10) ◽  
pp. 1634-1640 ◽  
Author(s):  
Jun Morimoto ◽  
Michihiro Fudamoto ◽  
Kenichiro Tahira ◽  
Tatsuo Kida ◽  
Seiji Kato ◽  
...  
Keyword(s):  
Spectral Analysis ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy

Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS) of Deep Centers in CdTe Single Crystals

1988 ◽  
Vol 27 (Part 1, No. 12) ◽  
pp. 2256-2259 ◽  
Author(s):  
Jun Morimoto ◽  
Michihiro Fudamoto ◽  
Shuuji Tashiro ◽  
Masaaki Arai ◽  
Toru Miyakawa ◽  
...  
Keyword(s):  
Spectral Analysis ◽  
Single Crystals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Centers ◽  
Transient Spectroscopy

Evidence for Metastabile State of DX Center in AxGa1-xAs

1992 ◽  
Vol 262 ◽  
Author(s):  
Subhasis Ghosh ◽  
Vikram Kumar
Keyword(s):  
Activation Energy ◽  
Deep Level Transient Spectroscopy ◽  
Thermal Activation ◽  
Deep Level ◽  
Thermal Activation Energy ◽  
Dx Centers ◽  
Dx Center ◽  
Transient Spectroscopy ◽  
Silicon Doped ◽  
First Time

ABSTRACTPhoto-Deep Level Transient Spectroscopy with 1.38 eV light reveals a new level with thermal activation energy 0.2 eV of DX centers in silicon doped Alx Ga1-xAs (x = 0.26) for the first time. The observation of this level directly proves the negative-U properties of DX centers and the existence of thermodynamically metastable state DX.

Distribution of deep levels in Si:Au by spectral analysis of deep-level transient spectroscopy

1998 ◽  
Vol 66 (3) ◽  
pp. 323-325 ◽  
Author(s):  
J. Yoshino ◽  
Y. Okamoto ◽  
J. Morimoto ◽  
T. Miyakawa
Keyword(s):  
Spectral Analysis ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

Evaluation of Interface States in ZnO Varistors by Spectral Analysis of Deep Level Transient Spectroscopy

1999 ◽  
Vol 38 (Part 1, No. 2A) ◽  
pp. 899-900 ◽  
Author(s):  
Yasuhiro Ohbuchi ◽  
Junya Yoshino ◽  
Yoichi Okamoto ◽  
Jun Morimoto
Keyword(s):  
Spectral Analysis ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface States ◽  
Zno Varistors ◽  
Transient Spectroscopy

scholarly journals Studies of Deep Level Transient Spectroscopy of DX Centers in GaAlAs:Te under Uniaxial Stress

1992 ◽  
Vol 83-87 ◽  
pp. 853-858
Author(s):  
Ming Fu Li ◽  
Peter Y. Yu ◽  
Eicke R. Weber ◽  
E. Bauser ◽  
W.L. Hansen ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Uniaxial Stress ◽  
Dx Centers ◽  
Transient Spectroscopy

Pressure-dependent DLTS Experiments on Si-DOPED AlGaAs

1987 ◽  
Vol 104 ◽  
Author(s):  
John W. Farmer ◽  
Harold P. Hjalmarson ◽  
G. A. Samara
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Defect Complex ◽  
Persistent Photoconductivity ◽  
Dx Centers ◽  
Si Doped ◽  
Dx Center ◽  
Transient Spectroscopy ◽  
Dlts Spectra

ABSTRACTPressure dependent Deep Level Transient Spectroscopy (DLTS) experiments are used to measure the properties of the deep donors (DX-centers) responsible for the persistent photoconductivity effect in Si-doped AlGaAs. The sample dependence of the DLTS spectra shows evidence for a defect complex involved in the DX-center.

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