Deep Level Transient Spectroscopy of DX Centers

1994 ◽  
Vol 108 ◽  
pp. 75-96
Author(s):  
Enrique Calleja ◽  
Ignacio Izpura
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Dx Centers ◽  
Transient Spectroscopy

Evidence for Metastabile State of DX Center in AxGa1-xAs

1992 ◽  
Vol 262 ◽  
Author(s):  
Subhasis Ghosh ◽  
Vikram Kumar
Keyword(s):  
Activation Energy ◽  
Deep Level Transient Spectroscopy ◽  
Thermal Activation ◽  
Deep Level ◽  
Thermal Activation Energy ◽  
Dx Centers ◽  
Dx Center ◽  
Transient Spectroscopy ◽  
Silicon Doped ◽  
First Time

ABSTRACTPhoto-Deep Level Transient Spectroscopy with 1.38 eV light reveals a new level with thermal activation energy 0.2 eV of DX centers in silicon doped Alx Ga1-xAs (x = 0.26) for the first time. The observation of this level directly proves the negative-U properties of DX centers and the existence of thermodynamically metastable state DX.

Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS) of DX-centers in AlxGa1-xAs:Sn

1988 ◽  
Vol 27 (Part 1, No. 5) ◽  
pp. 738-745 ◽  
Author(s):  
Michihiro Fudamoto ◽  
Kenichiro Tahira ◽  
Jun Morimoto ◽  
Toru Miyakawa
Keyword(s):  
Spectral Analysis ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Dx Centers ◽  
Transient Spectroscopy

scholarly journals Studies of Deep Level Transient Spectroscopy of DX Centers in GaAlAs:Te under Uniaxial Stress

1992 ◽  
Vol 83-87 ◽  
pp. 853-858
Author(s):  
Ming Fu Li ◽  
Peter Y. Yu ◽  
Eicke R. Weber ◽  
E. Bauser ◽  
W.L. Hansen ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Uniaxial Stress ◽  
Dx Centers ◽  
Transient Spectroscopy

Pressure-dependent DLTS Experiments on Si-DOPED AlGaAs

1987 ◽  
Vol 104 ◽  
Author(s):  
John W. Farmer ◽  
Harold P. Hjalmarson ◽  
G. A. Samara
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Defect Complex ◽  
Persistent Photoconductivity ◽  
Dx Centers ◽  
Si Doped ◽  
Dx Center ◽  
Transient Spectroscopy ◽  
Dlts Spectra

ABSTRACTPressure dependent Deep Level Transient Spectroscopy (DLTS) experiments are used to measure the properties of the deep donors (DX-centers) responsible for the persistent photoconductivity effect in Si-doped AlGaAs. The sample dependence of the DLTS spectra shows evidence for a defect complex involved in the DX-center.

Photoluminescence and deep-level transient spectroscopy of DX-centers in selectively silicon-doped GaAs-AlAs superlattices

1991 ◽  
Author(s):  
Soraya Ababou ◽  
Taha Benyattou ◽  
Jean J. Marchand ◽  
Louis Mayet ◽  
Gerard Guillot ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Dx Centers ◽  
Transient Spectroscopy ◽  
Silicon Doped

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Two-Dimensional Local Deep-Level Transient Spectroscopy Imaging Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2016 ◽  
Author(s):  
N. Chinone ◽  
Y. Cho ◽  
R. Kosugi ◽  
Y. Tanaka ◽  
S. Harada ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Trap Density ◽  
New Technique ◽  
Two Dimensional ◽  
Nonlinear Dielectric ◽  
Annealing Conditions ◽  
Transient Spectroscopy ◽  
A New Technique

Abstract A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.

Sign in / Sign up

Export Citation Format

Share Document