Alkali-Developable Silicone-Based Positive Resist for Electron Beam Lithography

1988 ◽  
Vol 27 (Part 2, No. 11) ◽  
pp. L2137-L2138 ◽  
Author(s):  
Hiroshi Ban ◽  
Akinobu Tanaka ◽  
Saburo Imamura
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Positive Resist

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Estimation of Nanometer-Sized EB Patterning Using Energy Deposition Distribution in Monte Carlo Simulation

2011 ◽  
Vol 497 ◽  
pp. 127-132 ◽  
Author(s):  
Hui Zhang ◽  
Takuro Tamura ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Energy Distribution ◽  
Electron Energy ◽  
Electron Beam Lithography ◽  
Energy Deposition ◽  
Si Substrate ◽  
Positive Resist

We have studied on theoretical electron energy deposition in thin resist layer on Si substrate for electron beam lithography. We made Monte Carlo simulation to calculate the energy distribution and to consider formation of nanometer sized pattern regarding electron energy, resist thickness and resist type. The energy distribution in 100 nm-thick resist on Si substrate were calculated for small pattern. The calculations show that 4 nm-wide pattern will be formed when resist thickness is less than 30 nm. Furthermore, a negative resist is more suitable than positive resist by the estimation of a shape of the energy distribution.

Electron-beam lithography of isolated trenches with chemically amplified positive resist

2002 ◽  
Author(s):  
Andrew R. Eckert ◽  
Richard J. Bojko ◽  
Harold Gentile ◽  
Robert Harris ◽  
Jay Jayashankar ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Chemically Amplified ◽  
Positive Resist

Optimization of a High-Performance Chemically Amplified Positive Resist for Electron-Beam Lithography

1996 ◽  
Vol 35 (Part 1, No. 12B) ◽  
pp. 6506-6510 ◽  
Author(s):  
Tetsuro Nakasugi ◽  
Hitoshi Tamura ◽  
Hiromi Niiyama ◽  
Satoshi Saito ◽  
Naoko Kihara ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
High Performance ◽  
Chemically Amplified ◽  
Positive Resist

Comparison of Nanosized Pattern of Calixarene and ZEP520 Resists by Using Energy Deposition Distribution

2013 ◽  
Vol 534 ◽  
pp. 107-112
Author(s):  
Hui Zhang ◽  
Takuya Komori ◽  
Zulfakri bin Mohamad ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Electron Beam ◽  
Energy Density ◽  
Probe Beam ◽  
Electron Beam Lithography ◽  
Capillary Force ◽  
Energy Deposition ◽  
Critical Energy ◽  
Critical Energy Density ◽  
20 Nm ◽  
Positive Resist

We numerically modeled the process of exposure and development of the calixarene negative resist and ZEP520 positive resist in electron beam lithography (EBL) in order to understand the limitation of nanopatterning of these two resists and to improve the resolution of the patterning. From the calculation of energy deposition distribution (EDD) in resist at various beam diameters, it is obvious that the fine probe beam with a diameter of 2 nm and thin resist should be adopted for formation of very fine dots. The simulation of resist development profile indicates that a dot size of 2 nm with a pitch of 20 nm can even be obtained at a higher critical energy density by using calixarene resist, while it cannot form the small pattern by using the ZEP520 resist because of the capillary force.

Motif Parameters Based Characterization of Line Edge Roughness of a Nanoscale Grating Structure

2010 ◽  
Vol 437 ◽  
pp. 45-50
Author(s):  
Zhuang De Jiang ◽  
Feng Xia Zhao ◽  
Wei Xuan Jing ◽  
Philip D. Prewett ◽  
Kyle Jiang
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Evaluation Method ◽  
Line Edge Roughness ◽  
Grating Structure ◽  
Nano Scale ◽  
Edge Roughness ◽  
Positive Resist

Motif parameters were introduced to characterize line edge roughness (LER) of a nanoscale grating structure. Firstly with electron beam lithography employed the expected nano-scale grating structure with linewidth of 16 nm was fabricated on positive resist. Then the line edge profiles of the structure were extracted and their LERs were characterized. The results showed that the evaluation method is rather simple, effective and recommendable.

scholarly journals Enhancement of superconductivity in NbN nanowires by negative electron-beam lithography with positive resist

2017 ◽  
Vol 122 (8) ◽  
pp. 083901 ◽  
Author(s):  
I. Charaev ◽  
T. Silbernagel ◽  
B. Bachowsky ◽  
A. Kuzmin ◽  
S. Doerner ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Enhancement Of Superconductivity ◽  
Positive Resist

Fabrication of Nanopit Array Using Electron Beam Lithography

2011 ◽  
Vol 364 ◽  
pp. 169-173
Author(s):  
Alsadat Rad Maryam ◽  
Kamarulazizi Ibrahim
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Experimental Results ◽  
Sem Images ◽  
Array Pattern ◽  
Pattern Shape ◽  
Positive Resist

This work reported the fabrication of nanopits array pattern using electron beam lithography (EBL). The effects of electron dosage on pattern shape were evaluated through EBL with a positive resist, Poly Methyl Meth Acrylate (PMMA), under acceleration voltages of 20 and 30 kV. Pattern of nanopits with 200 nm diameter have been created on PMMA to investigate the effect of various electron beam doses. The SEM images have shown effect of the voltage and dosage variation on them. In addition, Monte Carlo simulation has been done to show the scattering of electrons and proximity effect at different voltages in PMMA in order to explain the experimental results.

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