New chemically amplified positive resist for electron beam lithography

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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Sub-150-nm electron-beam lithography using AZPN114 chemically amplified resist

10.1117/12.275869 ◽

1997 ◽

Cited By ~ 1

Author(s):

Zheng Cui ◽

R. A. Moody ◽

Ian M. Loader ◽

John G. Watson ◽

Philip D. Prewett

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Chemically Amplified ◽

Chemically Amplified Resist

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Proximity correction of chemically amplified resists for electron beam lithography

Microelectronic Engineering ◽

10.1016/s0167-9317(98)00041-0 ◽

1998 ◽

Vol 41-42 ◽

pp. 183-186 ◽

Cited By ~ 5

Author(s):

Zheng Cui ◽

Philp D Prewett

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Chemically Amplified ◽

Chemically Amplified Resists

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Estimation of Nanometer-Sized EB Patterning Using Energy Deposition Distribution in Monte Carlo Simulation

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.497.127 ◽

2011 ◽

Vol 497 ◽

pp. 127-132 ◽

Cited By ~ 6

Author(s):

Hui Zhang ◽

Takuro Tamura ◽

You Yin ◽

Sumio Hosaka

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Beam ◽

Energy Distribution ◽

Electron Energy ◽

Electron Beam Lithography ◽

Energy Deposition ◽

Si Substrate ◽

Positive Resist

We have studied on theoretical electron energy deposition in thin resist layer on Si substrate for electron beam lithography. We made Monte Carlo simulation to calculate the energy distribution and to consider formation of nanometer sized pattern regarding electron energy, resist thickness and resist type. The energy distribution in 100 nm-thick resist on Si substrate were calculated for small pattern. The calculations show that 4 nm-wide pattern will be formed when resist thickness is less than 30 nm. Furthermore, a negative resist is more suitable than positive resist by the estimation of a shape of the energy distribution.

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