The Characterization of Traps in Semi-Insulating Gallium Arsenide Buffer Layers Grown at Low Temperature by Molecular Beam Epitaxy with an Improved Zero-Bias Thermally Stimurated Current Technique
1991 ◽
Vol 30
(Part 2, No. 11A)
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pp. L1843-L1846
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1997 ◽
Vol 175-176
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pp. 499-503
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2008 ◽
Vol 53
(1)
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pp. 276-281
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2013 ◽
Vol 25
(6)
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pp. 1523-1526
Keyword(s):
1996 ◽
Vol 35
(Part 1, No. 3)
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pp. 1630-1636
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Keyword(s):