Dependence of Gate Oxide Breakdown Frequency on Ion Current Density Distributions during Electron Cyclotron Resonance Plasma Etching

1991 ◽  
Vol 30 (Part 2, No. 11A) ◽  
pp. L1902-L1904 ◽  
Author(s):  
Seiji Samukawa
Keyword(s):  
Plasma Etching ◽  
Current Density ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Gate Oxide ◽  
Ion Current ◽  
Oxide Breakdown ◽  
Density Distributions ◽  
Ion Current Density ◽  
Resonance Plasma

Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar

1990 ◽  
Vol 56 (15) ◽  
pp. 1424-1426 ◽  
Author(s):  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
A. P. Kinsella ◽  
D. Johnson ◽  
C. Constantine
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma

Evaluation of Semiconductor Lattice Damage Using a Newly-Developed Photodisplacement Laser Probe

1991 ◽  
Vol 236 ◽  
Author(s):  
S. Sumie ◽  
H. Takamatsu ◽  
H. Tsunaki ◽  
Y. Nishimoto ◽  
Y Nakai
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Laser Probe ◽  
Low Level ◽  
Highly Sensitive ◽  
Lattice Damage ◽  
Density Surface ◽  
Resonance Plasma

AbstractA highly sensitive laser probe for photo-acoustic displacement(PAD) has been developed and applied to the monitoring of low-level lattice damage in semiconductors. Since a photodisplacement laser probe with the sensitivity of 0.1 picometers is employed in this measurement, lower density damage for instance, formed by 50 keV B+ implantation with a dose of 5X109 ions/cm2 can be detected. Correlation of the PAD with damage density was obtained in B+ implantation. Therefore, quantitative damage density can be obtained from the relation for lightly damaged layers, such as formed by chemomechanical polishing and by electron cyclotron resonance plasma etching. This technique is useful-for monitoring of low damage density surface.

ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides

1996 ◽  
Vol 69 (10) ◽  
pp. 1426-1428 ◽  
Author(s):  
C. B. Vartuli ◽  
S. J. Pearton ◽  
J. W. Lee ◽  
J. Hong ◽  
J. D. MacKenzie ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma
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