Interface Recombination Reduction by (NH4)2Sx-Passivation in Metalorganic Chemical Vapor Deposition Regrown GaAlAs/GaAs Buried Heterostructure Lasers and Estimation of Threshold Currents in Microcavity Surface Emitting Lasers

Vapor Deposition ◽

Chemical Vapor ◽

Interface Recombination ◽

Surface Emitting Lasers ◽

Buried Heterostructure ◽

Emitting Lasers ◽

GaAs surface emitting lasers with circular buried heterostructure grown by metalorganic chemical vapor deposition and two‐dimensional laser array

10.1063/1.99405 ◽

1988 ◽

Vol 52 (7) ◽

pp. 528-529 ◽

Cited By ~ 31

Author(s):

Fumio Koyama ◽

Kazuhiko Tomomatsu ◽

Kenichi Iga

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Two Dimensional ◽

Laser Array ◽

Surface Emitting Lasers ◽

Buried Heterostructure ◽

Emitting Lasers ◽

Manufacturability of vertical-cavity surface emitting lasers grown by metalorganic chemical vapor deposition

10.2172/10129730 ◽

1998 ◽

Author(s):

Not Given Author

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Cavity Surface ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Vertical Cavity ◽

Low‐threshold 1.3‐μm GaInAsP/InP buried heterostructure lasers by liquid phase epitaxy and metalorganic chemical vapor deposition

10.1063/1.92697 ◽

1981 ◽

Vol 39 (3) ◽

pp. 188-189 ◽

Cited By ~ 5

Author(s):

Willie Ng ◽

C. S. Hong ◽

H. Manasevit ◽

P. D. Dapkus

Keyword(s):

Liquid Phase ◽

Liquid Phase Epitaxy ◽

Vapor Deposition ◽

Chemical Vapor ◽

Buried Heterostructure ◽

Low Threshold ◽

Fabrication of InGaAsP/InP buried heterostructure laser using reactive ion etching and metalorganic chemical vapor deposition

IEEE Photonics Technology Letters ◽

10.1109/68.205611 ◽

1993 ◽

Vol 5 (3) ◽

pp. 279-281 ◽

Cited By ~ 19

Author(s):

B.-T. Lee ◽

R.A. Logan ◽

R.F. Kalicek ◽

A.M. Sergent ◽

D.L. Coblentz ◽

...

Keyword(s):

Vapor Deposition ◽

Reactive Ion Etching ◽

Chemical Vapor ◽

Ion Etching ◽

Heterostructure Laser ◽

Buried Heterostructure ◽

InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition

10.1063/1.100935 ◽

1989 ◽

Vol 54 (6) ◽

pp. 499-501 ◽

Cited By ~ 70

Author(s):

P. K. York ◽

K. J. Beernink ◽

G. E. Fernández ◽

J. J. Coleman

Keyword(s):

Quantum Well ◽

Vapor Deposition ◽

Chemical Vapor ◽

Strained Layer ◽

Buried Heterostructure ◽

Al Contamination in InGaAsN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition and 1.3 µm InGaAsN Vertical Cavity Surface Emitting Lasers

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.1260 ◽

2004 ◽

Vol 43 (4A) ◽

pp. 1260-1263 ◽

Cited By ~ 12

Author(s):

Tetsuya Takeuchi ◽

Ying-Lan Chang ◽

Michael Leary ◽

Dan Mars ◽

Yoon Kyu Song ◽

...

Keyword(s):

Quantum Wells ◽

Vapor Deposition ◽

Chemical Vapor ◽

Cavity Surface ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Vertical Cavity ◽

Metalorganic chemical vapor deposition of InGaAsP/InP layers and fabrication of 1.3‐μm planar buried heterostructure lasers

Journal of Applied Physics ◽

10.1063/1.341411 ◽

1988 ◽

Vol 64 (7) ◽

pp. 3684-3688 ◽

Cited By ~ 2

Author(s):

T. Kawabata ◽

H. Ishiguro ◽

S. Koike

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Buried Heterostructure ◽

Properties of AlGaAs buried heterostructure lasers and laser arrays grown by a two‐step metalorganic chemical vapor deposition

10.1063/1.97024 ◽

1986 ◽

Vol 48 (25) ◽

pp. 1716-1718 ◽

Cited By ~ 7

Author(s):

D. F. Welch ◽

P. S. Cross ◽

D. R. Scifres ◽

W. Streifer ◽

R. D. Burnham

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Laser Arrays ◽

Buried Heterostructure ◽

InGaAsP multiple quantum well lasers with planar buried heterostructure prepared by metalorganic chemical vapor deposition

10.1063/1.99547 ◽

1988 ◽

Vol 52 (25) ◽

pp. 2099-2101 ◽

Cited By ~ 3

Author(s):

H. Ishiguro ◽

T. Kawabata ◽

S. Koike

Keyword(s):

Quantum Well ◽

Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Buried Heterostructure ◽

Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure quantum-well lasers by three-step selective-area metalorganic chemical vapor deposition

IEEE Journal of Quantum Electronics ◽

10.1109/3.283791 ◽

1994 ◽

Vol 30 (2) ◽

pp. 441-445 ◽

Cited By ~ 26

Author(s):

T.M. Cockerill ◽

D.V. Forbes ◽

J.A. Dantzig ◽

J.J. Coleman

Keyword(s):

Quantum Well ◽

Vapor Deposition ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Strained Layer ◽

Selective Area ◽

Buried Heterostructure ◽